High performance optical transmitter with large bandwidth and high output power is one of the most important device in optical communications, 5th generation wireless systems and microwave photonics. We demonstrated an optical transmitter consisting of an InP-based large bandwidth travelling wave electrode (TWE) Mach-Zehnder electro-optic (EO) modulator hybrid integration with a high power distributed feedback (DFB) laser. The hybrid integration scheme was carefully designed. By using waveguide end-face coupling, the light from the InP-based DFB laser was effectively coupled into the input port of the Mach-Zehnder electro-optic modulator. A bright optical pattern at the output port of the EO modulator was observed. The output power of the integrated transmitter was measured about 0.27 mW with an inject current of 250 mA at room temperature. The transmission performance of high frequency signal was also verified by applying a microwave signal of 33 GHz. The results indicate that the simple and effective solution for hybrid integration of laser and EO modulator has potential applications in high speed optical communications.
The recently emerged photonic integration technology based on thin-film lithium niobate (LN) have been regarded as a very promising candidate for advanced photonic integrated circuits (PICs) due to its attractive nonlinear properties, wide-spread use in electro-optic applications, and etc. Generally, the thin-film LN optical waveguide used in PICs is sub-micrometer scale. Mode mismatch between fiber and sub-micrometer LN waveguide in chip is the main factor of increasing the fiber-to-chip coupling loss and the total insertion loss of LN PICs. Therefore, for practical applications, low-loss mode size converter for coupling between fiber and sub-micrometer LN waveguide is essential. In this paper, an efficient and novel fiber-to-chip mode size converter for thin-film LN PICs was designed and fabricated. The converter consists of a LN nano-taper and a cantilevered SiO2 waveguide. The nano-taper is embedded in the center of SiO2 waveguide. Laterally connected SiO2 cantilever beams are fabricated to provide structural support for the cantilevered SiO2 waveguide. Our work provides an efficient way to realize low-loss fiber-to-chip interface for thin-film LN PICs.
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