Mr. Jerome F. Wandell Profile

Jerome F. Wandell

Marketing Manager - DSA Patterning

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Author

Publications (7)

Proceedings Article | 9 April 2024 Presentation + Paper

Directed self-assembly: PS-b-PMMA materials readiness and high-chi platforms for extended geometry scaling

Jerome Wandell, Kevin Gorman, Boaz Alperson, Durairaj Baskaran, Md. Rahman, JiHoon Kim, Stefan Michlik, Youngjun Her, Shinji Miyazaki

Proceedings Volume 12956, 129560F (2024) https://doi.org/10.1117/12.3010505

KEYWORDS: Directed self assembly, Block copolymers, Extreme ultraviolet, Stochastic processes, Copolymers, Critical dimension metrology, Optical lithography, Molecular self-assembly, Process control, Polymerization

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Proceedings Article | 23 March 2016 Paper

Expanding the printable design space for lithography processes utilizing a cut mask

Jerome Wandell, Mohamed Salama, William Wilkinson, Mark Curtice, Jui-Hsuan Feng, Shao Wen Gao, Abhishek Asthana

Proceedings Volume 9781, 978112 (2016) https://doi.org/10.1117/12.2219201

KEYWORDS: Photomasks, Lithography, Optical proximity correction, Double patterning technology, Optical lithography, Design for manufacturability, Manufacturing, Lithographic illumination, Semiconductors, Logic devices, Printing, Photovoltaics, Analog electronics, Etching, Line width roughness, SRAF

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Proceedings Article | 17 April 2014 Paper

High speed EUV using post processing and self-aligned double patterning as a speed enhancement technique

Jerome Wandell, Anton deVilliers, Lior Huli, Serge Biesemans, Kathleen Nafus, Mike Carcasi, Jeff Smith, Dave Hetzer, Craig Higgins, Vinayak Rastogi, Erik Verduijn

Proceedings Volume 9048, 90483B (2014) https://doi.org/10.1117/12.2048862

KEYWORDS: Extreme ultraviolet, Etching, Double patterning technology, Extreme ultraviolet lithography, Atomic layer deposition, Line edge roughness, Line width roughness, Photoresist processing, Lithography, Resist chemistry

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Proceedings Article | 17 April 2014 Paper

Integration of an EUV metal layer: a 20/14nm demo

Craig Higgins, Erik Verduijn, Xiang Hu, Liang Wang, Mandeep Singh, Jerome Wandell, Sohan Mehta, Jean Raymond Fakhoury, Mark Zaleski, Yi Zou, Hui Peng Koh, Pawitter Mangat

Proceedings Volume 9048, 90481Q (2014) https://doi.org/10.1117/12.2048285

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Metals, Optical lithography, Optical proximity correction, Overlay metrology, Deep ultraviolet, Inspection

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Proceedings Article | 20 March 2012 Paper

Assessment of negative tone development challenges

Sohan Mehta, Yongan Xu, Guillaume Landie, Vikrant Chauhan, Sean Burns, Peggy Lawson, Bassem Hamieh, Jerome Wandell, Martin Glodde, Yu Yang Sun, Mark Kelling, Alan Thomas, Jeong Soo Kim, James Chen, Hirokazu Kato, Chiahsun Tseng, Chiew-Seng Koay, Yoshinori Matsui, Martin Burkhardt, Yunpeng Yin, David Horak, Shyng-Tsong Chen, Yann Mignot, Yannick Loquet, Matthew Colburn, John Arnold, Terry Spooner, Lior Huli, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, Shannon Dunn

Proceedings Volume 8325, 832506 (2012) https://doi.org/10.1117/12.917560

KEYWORDS: Semiconducting wafers, Polymers, Optical proximity correction, Reactive ion etching, Etching, Scanning electron microscopy, Neodymium, Photoresist developing, Image processing, Roads

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SPIE Journal Paper | 1 October 2010

Stochastic simulation of resist linewidth roughness and critical dimension uniformity for optical lithography

Stewart Robertson, John Biafore, Mark Smith, Michael Reilly, Jerome Wandell

JM3, Vol. 9, Issue 04, 041212, (October 2010) https://doi.org/10.1117/12.10.1117/1.3517090

KEYWORDS: Stochastic processes, Critical dimension metrology, Line width roughness, Data modeling, Calibration, Computer simulations, Scanning electron microscopy, Lithography, Photons, Molecules

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Proceedings Article | 12 December 2009 Paper

Validation of the predictive power of a calibrated physical stochastic resist model

Stewart Robertson, John Biafore, Mark Smith, Michael Reilly, Jerome Wandell

Proceedings Volume 7520, 75201N (2009) https://doi.org/10.1117/12.836901

KEYWORDS: Stochastic processes, Calibration, Data modeling, Lithography, Line width roughness, Semiconducting wafers, Monte Carlo methods, Scanning electron microscopy, Finite element methods, Photoresist materials

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Showing 5 of 7 publications

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