Dr. Jens Busch Profile

Dr. Jens Busch

at GlobalFoundries

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 12 April 2013 Paper

Effects of focus difference of nested and isolated features for scanner proximity matching

GuoXiang Ning, Paul Ackmann, Huifeng Koh, Frank Richter, Matthias Ruhm, Jens Busch, Norman Chen, Karin Kurth , Andre Leschok, Chin Teong Lim

Proceedings Volume 8683, 86831R (2013) https://doi.org/10.1117/12.2011504

KEYWORDS: Scanners, Semiconducting wafers, Optical proximity correction, Critical dimension metrology, Metals, Reticles, Photomasks, Tolerancing, Calibration, Binary data

Read Abstract +

Assuming that all exposure tools on which a certain production reticle is being used are from same type and configuration it can be expected that the performance of the reticle should be independent from the exposing machines. When planning or performing arrangements for process transfer between different production sites or capacity expansion within one site performing a proximity matching between different exposure tools is a common activity. One of the objectives of a robust optical proximity correction (OPC) model is to simulate the process variation. Normally, the wafer critical dimension (CD) calibration of an OPC model is applied for one specific scanner first. In order to enhance the tolerance of the OPC model so called fingerprints of different scanners should be matched as closely as possible. Some examples of features for fingerprint test patterns are “critical dimension through pitch” (CDTP), “inverse CDTP”, “tipto-tip” and “linearity patterns”, and CD difference of disposition structures. All of them should also be matched as tightly as possible in order to reduce the process variation and to strengthen the tolerance of an OPC model. However, the focus difference between nested and isolated features which is directly influenced by different exposure tools and reticle layers will have an effect on the proximity matching of some patterns such as inverse CDTP and uniformly distributed disposition structures. In this manuscript the effects of focus differences between nested and isolated features for scanner proximity matching will be demonstrated. Moreover, the results for several scanners and different mask layers using advanced binary mask blank material will also be investigated. Even if some parts of the proximity features are closely enough to each other different parity proximity patterns will be affected by the focus difference between dense and isolated features. Because the focus difference between isolated and dense features is dependent on the illumination conditions, different mask layers applied for a proximity correction will lead to different results. The effects of source variations causing isolated and dense feature focus differences between scanners for 28 nm poly, 1X metal and contact layers will be illustrated.

Proceedings Article | 2 April 2011 Paper

Multilayer reticles: advantages and challenges for 28nm chip making

Arthur Hotzel, Rolf Seltmann, Jens Busch, Eric Cotte

Proceedings Volume 7985, 798507 (2011) https://doi.org/10.1117/12.885690

KEYWORDS: Reticles, Semiconducting wafers, Scanners, Overlay metrology, Thermal effects, Manufacturing, Lithography, Wafer-level optics, Image processing, Process control

Read Abstract +

Proceedings Article | 2 April 2010 Paper

Improving lithographic performance for 32 nm

Jens Busch, Anne Parge, Rolf Seltmann, Heike Scholtz, Bernd Schultz, Uwe Knappe, Matthias Ruhm, Marc Noot, Dieter Woischke, Paul Luehrmann

Proceedings Volume 7638, 763805 (2010) https://doi.org/10.1117/12.848613

KEYWORDS: Semiconducting wafers, Scanners, Metrology, Overlay metrology, Lithography, Process control, Control systems, Time metrology, Data modeling, Scatterometry

Read Abstract +

Proceedings Article | 27 May 2009 Paper

Mask parameter variation in the context of the overall variation budget of an advanced logic wafer Fab

Rolf Seltmann, Gert Burbach, Anne Parge, Jens Busch, Tino Hertzsch, Andre Poock, Francois Weisbuch, Andre Holfeld

Proceedings Volume 7470, 747006 (2009) https://doi.org/10.1117/12.835166

KEYWORDS: Photomasks, Semiconducting wafers, Optical lithography, Etching, Transistors, Line width roughness, Logic, Oscillators, Scanners, Metrology

Read Abstract +

Proceedings Article | 4 April 2007 Paper

Meeting overlay requirements for future technology nodes with in-die overlay metrology

Bernd Schulz, Rolf Seltmann, Jens Busch, Fritjof Hempel, Eric Cotte, Benjamin Alles

Proceedings Volume 6518, 65180E (2007) https://doi.org/10.1117/12.708471

KEYWORDS: Overlay metrology, Reticles, Semiconducting wafers, Image registration, Photomasks, Data modeling, Pellicles, Scanners, Error analysis, Metrology

Read Abstract +

Proceedings Article | 24 March 2006 Paper

In-field overlay uncertainty contributors: a back end study

Mike Adel, Aviv Frommer, Elyakim Kassel, Pavel Izikson, Philippe Leray, Bernd Schulz, Rolf Seltmann, Jens Busch

Proceedings Volume 6152, 615213 (2006) https://doi.org/10.1117/12.656467

KEYWORDS: Reticles, Overlay metrology, Scanners, Data modeling, Semiconducting wafers, Metrology, Chemical mechanical planarization, Manufacturing, Polishing, Optical alignment

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years