Dr. Jelle Vandereyken Profile

Dr. Jelle Vandereyken

at imec

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Author

Publications (21)

Proceedings Article | 13 November 2024 Presentation

Enhancing sustainability in semiconductor manufacturing: energy-efficient optical crosslinking for lithography processes

Elke Caron, Wesley Zanders, Seungjoo Baek, Seonggil Heo, Jelle Vandereyken, Hyo Seon Suh, Douglas Guerrero, Andreia Santos, Masahiko Harumoto, Tsuyoshi Mitsuhashi

Proceedings Volume PC13215, PC1321507 (2024) https://doi.org/10.1117/12.3036987

KEYWORDS: Lithography, Sustainability, Semiconductor manufacturing, Optics manufacturing, Spin on carbon materials, Semiconductors, Power consumption, Industry, Carbon, System integration

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SPIE Journal Paper | 4 September 2024

Energy-efficient optical crosslinking of underlayers for sustainable and low-power semiconductor manufacturing

Seungjoo Baek, Jelle Vandereyken, Hyo Seon Suh, Elke Caron, Andreia Santos, Masahiko Harumoto, Douglas Guerrero, Seonggil Heo

JM3, Vol. 23, Issue 03, 034602, (September 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.3.034602

KEYWORDS: Power consumption, Sustainability, Spin on carbon materials, Semiconductors, Etching, Optical lithography, Thermography, Industry, Semiconductor manufacturing, Optics manufacturing

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Proceedings Article | 10 April 2024 Presentation + Paper

Machine, process, and material efforts towards sustainable lithography

Andreia Santos, Wesley Zanders, Elke Caron, Seungjoo Baek, Seonggil Heo, Jelle Vandereyken, Hyo Seon Suh, Douglas Guerrero, Masahiko Harumoto, Tsuyoshi Mitsuashi

Proceedings Volume 12957, 1295717 (2024) https://doi.org/10.1117/12.3010506

KEYWORDS: Spin on carbon materials, Sustainability, Thermography, Power consumption, Lithography, Displays, Semiconductors, Optical lithography, Materials processing, Extreme ultraviolet

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Proceedings Article | 9 April 2024 Poster + Paper

Enhancing process stability and defect control in advanced EUV lithography via innovative track systems

Elke Caron, Andreia Santos, Wesley Zanders, Jelle Vandereyken, Seonggil Heo, Masahiko Harumoto

Proceedings Volume 12957, 1295720 (2024) https://doi.org/10.1117/12.3011129

KEYWORDS: Semiconducting wafers, Extreme ultraviolet lithography, Line width roughness, Image processing, Standards development, Line edge roughness, Film thickness, Optical lithography, Metal oxides, Critical dimension metrology

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Proceedings Article | 9 April 2024 Poster + Paper

Light-curable underlayers for non-baking process in EUV lithography

Seungjoo Baek, Seonggil Heo, Jelle Vandereyken, Hyo Seon Suh, Elke Caron, Andreia Santos, Masahiko Harumoto, Douglas Guerrero

Proceedings Volume 12957, 129572G (2024) https://doi.org/10.1117/12.3012855

KEYWORDS: Power consumption, Etching, Spin on carbon materials, Semiconductors, Optical lithography, Line edge roughness, Thermography, Extreme ultraviolet lithography, Lithography, Industry

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Proceedings Article | 9 April 2024 Presentation + Paper

Mitigation of EUV photoresist pattern deformation by wafer backside cleaning techniques

Masahiko Harumoto, Andreia Figueiredo dos Santos, Wesley Zanders, Elke Caron, Jelle Vandereyken

Proceedings Volume 12957, 129570Z (2024) https://doi.org/10.1117/12.3010976

KEYWORDS: Semiconducting wafers, Particles, Scanning electron microscopy, Extreme ultraviolet lithography, Scanners, Photoresist materials, Displays, Deformation

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Proceedings Article | 1 December 2023 Presentation + Paper

Track integrated backside cleaning towards high-NA EUV: correlation of backside contamination with frontside patterning performance

Jelle Vandereyken, Vincent Truffert, Sandip Halder, Elke Caron, Wesley Zanders, Andreia Santos, Masahiko Harumoto

Proceedings Volume PC12750, PC127500Q (2023) https://doi.org/10.1117/12.2687017

KEYWORDS: Semiconducting wafers, Contamination, Scanners, Optical lithography, Particles, Extreme ultraviolet, Displays, Extreme ultraviolet lithography, Inspection, Critical dimension metrology

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Proceedings Article | 22 November 2023 Presentation

Single exposure EUV process optimization for SNLP and BLP layer for next-generation DRAM manufacturing

Andreia Santos, Jeonghoon Lee, Elke Caron, Syamashree Roy, Jelle Vandereyken, Masahiko Harumoto, Sandip Halder, Victor Blanco, Van Tuong Pham, Bappaditya Dey

Proceedings Volume PC12750, PC1275004 (2023) https://doi.org/10.1117/12.2687539

KEYWORDS: Error analysis, Defect detection, Manufacturing, Extreme ultraviolet lithography, Extreme ultraviolet, Thermal stability, Temperature control, Simulations, Scanning electron microscopy, Photovoltaics

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Proceedings Article | 22 November 2023 Poster

Showcasing EUV process stability and defect control on SCREEN’s DT-3000 track

Elke Caron, Andreia Santos, Wesley Zanders, Jelle Vandereyken, Seonggil Heo, Masahiko Harumoto

Proceedings Volume PC12750, PC127500V (2023) https://doi.org/10.1117/12.2687628

KEYWORDS: Extreme ultraviolet, Semiconductor manufacturing, Line width roughness, Extreme ultraviolet lithography, Critical dimension metrology, Semiconductors, Semiconducting wafers, Printing, Optical lithography, Metrology

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Proceedings Article | 22 November 2023 Poster

Track solutions for enhanced resist stability: a leap towards high-NA EUVL manufacturability

Andreia Santos, Elke Caron, Wesley Zanders, Seonggil Heo, Jelle Vandereyken, Masahiko Harumoto

Proceedings Volume PC12750, PC127500U (2023) https://doi.org/10.1117/12.2687522

KEYWORDS: Extreme ultraviolet lithography, Manufacturing, Photoresist developing, Metal oxides, Semiconductors, Semiconductor manufacturing, Scanners, Printing, Photoresist materials, Optical lithography

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Proceedings Article | 21 November 2023 Presentation + Paper

EUV single exposure tip-to-tip variability control through PEB process optimization in BEOL layers

Syamashree Roy, Elke Caron, Andreia Santos, Joern-Holger Franke, Jelle Vandereyken, Sandip Halder

Proceedings Volume 12750, 127500P (2023) https://doi.org/10.1117/12.2687558

KEYWORDS: Process control, Critical dimension metrology, Back end of line, Optical lithography, Extreme ultraviolet lithography, Metals, Thermal stability, Temperature control, Semiconductors, Semiconducting wafers

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Proceedings Article | 29 May 2023 Presentation + Paper

Track integrated backside cleaning solution: impact of backside contamination on printing distortions

Andreia Santos, Wesley Zanders, Elke Caron, Masahiko Harumoto, Jelle Vandereyken, Jan Hermans, Vincent Truffert, Sandip Halder, Ronald Otten, Leon van Dijk, Richard van Haren

Proceedings Volume 12498, 1249809 (2023) https://doi.org/10.1117/12.2658418

KEYWORDS: Semiconducting wafers, Particles, Contamination, Extreme ultraviolet lithography, Scanners, Displays, Extreme ultraviolet, Printing, Industry, Optical lithography

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Proceedings Article | 1 May 2023 Presentation + Paper

Mitigating stochastics in EUV lithography by directed self-assembly

L. Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi, Remi Vallat, Philippe Bezard, Jelle Vandereyken, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Waikin Li, Mihir Gupta, Roberto Fallica

Proceedings Volume 12497, 124970I (2023) https://doi.org/10.1117/12.2657939

KEYWORDS: Block copolymers, Extreme ultraviolet, Directed self assembly, Extreme ultraviolet lithography, Bridges, Etching

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Proceedings Article | 1 May 2023 Presentation + Paper

EUV lithography line-space pattern rectification using block copolymer directed self-assembly: a roughness and defectivity study

Julie Van Bel, Lander Verstraete, Hyo Seon Suh, Stefan De Gendt, Philippe Bezard, Jelle Vandereyken, Waikin Li, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Andreia Santos, Boaz Alperson, YoungJun Her

Proceedings Volume 12497, 124970K (2023) https://doi.org/10.1117/12.2657990

KEYWORDS: Directed self assembly, Block copolymers, Extreme ultraviolet, Annealing, Film thickness, Extreme ultraviolet lithography, Line edge roughness, Critical dimension metrology, Semiconducting wafers, Line width roughness

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Proceedings Article | 30 April 2023 Poster

Track hardware as an EUV lithography booster: a deep-dive into SCREEN’s DT-3000 platform capabilities

Andreia Santos, Wesley Zanders, Elke Caron, Yuji Tanaka, Masaya Asai, Masahiko Harumoto, Jelle Vandereyken, Lander Verstraete, Hyo Seon Suh

Proceedings Volume 12498, 1249823 (2023) https://doi.org/10.1117/12.2658398

KEYWORDS: Extreme ultraviolet lithography, Lithography, Line width roughness, Ecosystems

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Proceedings Article | 31 October 2022 Poster

SCREEN's DT-3000 track-booster system: how can hardware improve EUV performance?

Andreia Santos, Yuji Tanaka, Masaya Asai, Masahiko Harumoto, Wesley Zanders, Jelle Vandereyken, Lander Verstraete, Ashish Rathore, Hyo Seon Suh

Proceedings Volume PC12292, PC122920W (2022) https://doi.org/10.1117/12.2643150

KEYWORDS: Extreme ultraviolet, Lithography, Line width roughness, Extreme ultraviolet lithography, Semiconducting wafers, Optical lithography, Ecosystems

Proceedings Article | 22 February 2021 Presentation + Paper

EUV lithographic process enablement with novel litho track hardware

Andreia Santos, V. Kosma, J. Vandereyken, H. Marhfour, Y. Tanaka, M. Harumoto, M. Asai, H. Stokes, H. S. Suh, P. Foubert, D. De Simone

Proceedings Volume 11612, 116120M (2021) https://doi.org/10.1117/12.2584515

KEYWORDS: Lithography, Extreme ultraviolet, Photoresist developing, Thin film coatings, Line width roughness, Photoresist materials, Extreme ultraviolet lithography

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Proceedings Article | 23 March 2020 Presentation + Paper

Defectivity modulation in EUV resists through advanced filtration technologies

Lucia D'Urzo, Toru Umeda, Takehito Mizuno, Atsushi Hattori, Rao Varanasi, Amarnauth Singh, Rajan Beera, Philippe Foubert, Jelle Vandereyken, Waut Drent

Proceedings Volume 11326, 113260K (2020) https://doi.org/10.1117/12.2560144

KEYWORDS: Semiconducting wafers, Particles, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Bridges, Defect inspection

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Proceedings Article | 13 March 2018 Presentation + Paper

LWR enhancement for 300mm track processing

Harold Stokes, Jelle Vandereyken, Waut Drent, Masahiko Harumoto, Masaya Asai, Yuji Tanaka, Chisayo Nakayama, Charles Pieczulewski

Proceedings Volume 10586, 105860J (2018) https://doi.org/10.1117/12.2297471

KEYWORDS: Annealing, Line width roughness, Semiconducting wafers, Line edge roughness, Ultraviolet radiation, Etching, Optical lithography, Lithography, Photoresist materials, Reticles

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Proceedings Article | 27 March 2017 Paper

Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration

Lucia D'Urzo, Hareen Bayana, Jelle Vandereyken, Philippe Foubert, Aiwen Wu, Jad Jaber, James Hamzik

Proceedings Volume 10146, 101462A (2017) https://doi.org/10.1117/12.2258582

KEYWORDS: Lithography, Photoresist materials, Immersion lithography, Semiconducting wafers, Line width roughness, Line edge roughness, Scanning electron microscopy, Particles, Bridges, Finite element methods, Fermium, Frequency modulation

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Proceedings Article | 24 March 2017 Presentation + Paper

Integrated approach to improving local CD uniformity in EUV patterning

Andrew Liang, Jan Hermans, Timothy Tran, Katja Viatkina, Chen-Wei Liang, Brandon Ward, Steven Chuang, Jengyi Yu, Greg Harm, Jelle Vandereyken, David Rio, Michael Kubis, Samantha Tan, Mircea Dusa, Akhil Singhal, Bart van Schravendijk, Girish Dixit, Nader Shamma, Rich Wise, Sirish Reddy

Proceedings Volume 10143, 1014319 (2017) https://doi.org/10.1117/12.2258192

KEYWORDS: Extreme ultraviolet lithography, Etching, Extreme ultraviolet, Lithography, High volume manufacturing, Stochastic processes, Plasma etching, Reactive ion etching, Plasma enhanced chemical vapor deposition, Focus stacking software, Photomasks

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Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies.

Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development.

Illumination conditions in EUV lithography were optimized to improve normalized image log slope (NILS), which is expected to reduce shot noise related effects. It can be seen that the EUV imaging contrast improvement can further reduce post-develop LCDU from 4.1 nm to 3.9 nm and from 2.8 nm to 2.6 nm. In parallel, etch processes were developed to further reduce LCDU, to control CD, and to transfer these improvements into the final target substrate. We also demonstrate that increasing post-develop CD through dose adjustment can enhance the LCDU reduction from etch. Similar trends were also observed in different pitches down to 40 nm. The solutions demonstrated here are critical to the introduction of EUV lithography in high volume manufacturing. It can be seen that through a synergistic deposition, lithography, and etch optimization, LCDU at a 40 nm pitch can be improved to 1.6 nm (3-sigma) in a target oxide layer and to 1.4 nm (3-sigma) at the photoresist layer.

Showing 5 of 21 publications

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