Dr. Ir Kusnadi Profile

Dr. Ir Kusnadi

Staff Engineer at Siemens EDA

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Author

Publications (17)

Proceedings Article | 10 April 2024 Poster + Paper

The effect of edge placement error on deformity and roughness calculation

Mohamed Abaidi, Ir Kusnadi, Stewart Wu, Lina Mahmoud, Loic Schneider, Borislava Dimitrova, Satya Sriram, Chris Clifford

Proceedings Volume 12955, 1295538 (2024) https://doi.org/10.1117/12.3010845

KEYWORDS: Contour modeling, Optical proximity correction, Contour extraction, Scanning electron microscopy, Deformation, Edge roughness, Calibration, Spectral density, Performance modeling, SRAF

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SPIE Journal Paper | 19 October 2023

Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

Chih-I Wei, Seulki Kang, Sayantan Das, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Germain Fenger, Azat Latypov, Ir Kusnadi, Gurdaman Khaira, Yuichiro Yamazaki, Werner Gillijns, Sandip Halder, Gian Lorusso

JM3, Vol. 22, Issue 04, 041603, (October 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041603

KEYWORDS: Modeling, Data modeling, Semiconducting wafers, Optical proximity correction, Contour modeling, Metrology, Calibration, Stochastic processes, Scanning electron microscopy, Performance modeling

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Proceedings Article | 22 February 2021 Presentation + Paper

Better prediction on patterning failure mode with hotspot aware OPC modeling

Chih-I Wei, Stewart Wu, Yunfei Deng, Gurdaman Khaira, Ir Kusnadi, Germain Fenger, Seulki Kang, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns, Gian Lorusso

Proceedings Volume 11611, 1161112 (2021) https://doi.org/10.1117/12.2583837

KEYWORDS: Optical proximity correction, Electron beam lithography, 3D modeling, Inspection, Calibration, Lithography, Data modeling, Time metrology, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 20 March 2020 Presentation + Paper

Realizing more accurate OPC models by utilizing SEM contours

Chih-I Wei, Rajiv Sejpal, Yunfei Deng, Ir Kusnadi, Germain Fenger, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns

Proceedings Volume 11325, 1132524 (2020) https://doi.org/10.1117/12.2554527

KEYWORDS: Scanning electron microscopy, Data modeling, Calibration, Optical proximity correction, Semiconducting wafers, Metrology, Image processing, 3D modeling, Photomasks, Image quality

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Proceedings Article | 14 October 2011 Paper

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask

Daisuke Hibino, Hiroyuki Shindo, Yutaka Hojyo, Thuy Do, Aasutosh Dave, Timothy Lin, Ir Kusnadi, John Sturtevant

Proceedings Volume 8166, 81661S (2011) https://doi.org/10.1117/12.898843

KEYWORDS: Optical proximity correction, Calibration, Photomasks, Data modeling, Semiconducting wafers, Scanning electron microscopy, Panoramic photography, Visualization, Process modeling, Cadmium

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Proceedings Article | 20 April 2011 Paper

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-Contours from wafer and mask

Daisuke Hibino, Yutaka Hojyo, Hiroyuki Shindo, Thuy Do, Aasutosh Dave, Tim Lin, Ir Kusnadi, John Sturtevant

Proceedings Volume 7971, 79712G (2011) https://doi.org/10.1117/12.879030

KEYWORDS: Calibration, Optical proximity correction, Photomasks, Data modeling, Semiconducting wafers, Scanning electron microscopy, Cadmium, Panoramic photography, Visualization, Optical alignment

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SPIE Journal Paper | 1 January 2011

High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

Daisuke Hibino, Hiroyuki Shindo, Yuichi Abe, Yutaka Hojyo, Germain Fenger, Thuy Do, Ir Kusnadi, John Sturtevant, Jeroen Van de Kerkhove, Peter De Bisschop

JM3, Vol. 10, Issue 1, 013012, (January 2011) https://doi.org/10.1117/12.10.1117/1.3530082

KEYWORDS: Scanning electron microscopy, Optical proximity correction, Calibration, Image quality, Electron microscopes, Lithography, Semiconducting wafers, Critical dimension metrology, Optical alignment, Visualization

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Proceedings Article | 2 April 2010 Paper

High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Daisuke Hibino, Hiroyuki Shindo, Yuichi Abe, Yutaka Hojyo, Germain Fenger, Thuy Do, Ir Kusnadi, John Sturtevant, Peter De Bisschop, Jeroen Van de Kerkhove

Proceedings Volume 7638, 76381X (2010) https://doi.org/10.1117/12.846025

KEYWORDS: Scanning electron microscopy, Optical proximity correction, Calibration, Image quality, Lithography, Semiconducting wafers, Visualization, Edge detection, Image acquisition, Alignment procedures

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Proceedings Article | 2 April 2010 Paper

Contour-based self-aligning calibration of OPC models

Ir Kusnadi, Thuy Do, Yuri Granik, John Sturtevant, Peter De Bisschop, Daisuke Hibino

Proceedings Volume 7638, 76382M (2010) https://doi.org/10.1117/12.848539

KEYWORDS: Calibration, Optical proximity correction, Scanning electron microscopy, Data modeling, Distance measurement, Visualization, Printing, Optical alignment, Semiconducting wafers, Metrology

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Proceedings Article | 24 March 2009 Paper

Contour quality assessment for OPC model calibration

Paul Filitchkin, Thuy Do, Ir Kusnadi, John Sturtevant, Peter de Bisschop, Jeroen Van de Kerkhove

Proceedings Volume 7272, 72722Q (2009) https://doi.org/10.1117/12.814662

KEYWORDS: Calibration, Scanning electron microscopy, Optical proximity correction, Statistical modeling, Visualization, Error analysis, Data modeling, Printing, Metrology, Image filtering

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Proceedings Article | 13 March 2009 Paper

High-precision contouring from SEM image in 32-nm lithography and beyond

Hiroyuki Shindo, Akiyuki Sugiyama, Hitoshi Komuro, Yutaka Hojo, Ryoichi Matsuoka, John Sturtevant, Thuy Do, Ir Kusnadi, Germain Fenger, Peter De Bisschop, Jeroen Van de Kerkhove

Proceedings Volume 7275, 72751F (2009) https://doi.org/10.1117/12.814430

KEYWORDS: Calibration, Optical proximity correction, Scanning electron microscopy, Line edge roughness, Edge detection, Algorithm development, Optical alignment, Semiconducting wafers, Data modeling, Critical dimension metrology

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Proceedings Article | 24 March 2008 Paper

Challenges of OPC model calibration from SEM contours

Yuri Granik, Ir Kusnadi

Proceedings Volume 6922, 69221H (2008) https://doi.org/10.1117/12.772060

KEYWORDS: Calibration, Scanning electron microscopy, Optical proximity correction, Metrology, Distance measurement, Critical dimension metrology, Data modeling, Printing, Curium, Process modeling

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Proceedings Article | 7 March 2008 Paper

SEM-contour based mask modeling

Jim Vasek, Edita Tejnil, Ir Kusnadi, Ofer Lindman, Ovadya Menadeva, Ram Peltinov

Proceedings Volume 6924, 69244Q (2008) https://doi.org/10.1117/12.776669

KEYWORDS: Photomasks, Calibration, Data modeling, Process modeling, Optical proximity correction, Scanning electron microscopy, Semiconducting wafers, Electron beam lithography, Lithography, Reticles

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Proceedings Article | 28 March 2007 Paper

Feedback flow to improve model-based OPC calibration test patterns

Walid Tawfic, Mohamed Al-Imam, Karim Madkour, Rami Fathy, Ir Kusnadi, George Bailey

Proceedings Volume 6521, 65211J (2007) https://doi.org/10.1117/12.712843

KEYWORDS: Calibration, Data modeling, Image processing, Process modeling, Scanning electron microscopy, Optical proximity correction, Photoresist processing, Feature extraction, Optical lithography, Printing

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Proceedings Article | 28 March 2007 Paper

Circuit-based SEM contour OPC model calibration

Kyle Patterson, Jim Vasek, Chi Min Yuan, George Bailey, Ir Kusnadi, Thuy Do, John Sturtevant

Proceedings Volume 6521, 65211N (2007) https://doi.org/10.1117/12.713044

KEYWORDS: Calibration, Optical proximity correction, Data modeling, Scanning electron microscopy, Model-based design, Critical dimension metrology, Process modeling, Manufacturing, Data processing, Metrology

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Proceedings Article | 27 March 2007 Paper

SEM image contouring for OPC model calibration and verification

Cyrus Tabery, Hidetoshi Morokuma, Ryoichi Matsuoka, Lorena Page, George Bailey, Ir Kusnadi, Thuy Do

Proceedings Volume 6520, 652019 (2007) https://doi.org/10.1117/12.714389

KEYWORDS: Calibration, Scanning electron microscopy, Optical proximity correction, Data modeling, Image processing, Edge detection, Process modeling, Metrology, Critical dimension metrology, Image quality

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Lithography models for leading-edge OPC and design verification must be calibrated with empirical data, and this data is traditionally collected as a one-dimensional quantification of the features acquired by a CD-SEM. Two-dimensional proximity features such as line-end, bar-to-bar, or bar-to-line are only partially characterized because of the difficulty in transferring the complete information of a SEM image into the OPC model building process. A new method of two-dimensional measurement uses the contouring of large numbers of SEM images acquired within the context of a design based metrology system to drive improvement in the quality of the final calibrated model. Hitachi High-Technologies has continued to develop "full automated EPE measurement and contouring function" based on design layout and detected edges of SEM image. This function can measure edge placement error everywhere in a SEM image and pass the result as a design layout (GDSII) into Mentor Graphics model calibration flow. Classification of the critical design elements using tagging scripts is used to weight the critical contours in the evaluation of model fitness. During process of placement of the detected SEM edges of into the coordinate system of the design, coordinate errors inevitably are introduced because of pattern matching errors. Also, line edge roughness in 2D features introduces noise that is large compared to the model building accuracy requirements of advanced technology nodes. This required the development of contour averaging algorithms. Contours from multiple SEM images are acquired of a feature and averaged before passing into the model calibration. This function has been incorporated into the prototype Calibre Workbench model calibration flow. Based on these methods, experimental data is presented detailing the model accuracy of a 45nm immersion lithography process using traditional 1D calibration only, and a hybrid model calibration using SEM image contours and 1D measurement results. Error sources in the contouring are assessed and reported on including systematic and random variation in the contouring results.

Proceedings Article | 20 March 2006 Paper

Intensive 2D SEM model calibration for 45nm and beyond

George Bailey, Thuy Do, Yuri Granik, Ir Kusnadi, Andrew Estroff

Proceedings Volume 6154, 61542W (2006) https://doi.org/10.1117/12.655076

KEYWORDS: Scanning electron microscopy, Calibration, Data modeling, Process modeling, Image processing, Critical dimension metrology, Optical calibration, Metrology, Electron microscopes, Optical proximity correction

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Showing 5 of 17 publications

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