Ms. Inna Tarshish-Shapir Profile

Inna Tarshish-Shapir

Advanced Application Development Engineer

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Publications (8)

Proceedings Article | 20 March 2020 Presentation + Paper

Optical imaging metrology calibration using high voltage scanning electron microscope at after-development inspection for advanced processes

N. Gutman, I. Tarshish, R. Gronheid, C. Dror, D. Michelsson, H. Backhauss, L. Levin, V. Levinski, Y. Paskover, L. Yerushalmi, T. Heidrich, S. Czerkas, U. Pohlmann, F. Laske

Proceedings Volume 11325, 113251X (2020) https://doi.org/10.1117/12.2551797

KEYWORDS: Scanning electron microscopy, Overlay metrology, Metrology, Calibration, Optical calibration

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Proceedings Article | 24 March 2016 Paper

Overlay metrology performance prediction fidelity: the factors enabling a successful target design cycle

Inna Tarshish-Shapir, Eitan Hajaj, Greg Gray, Jeffery Hodges, Jianming Zhou, Sarah Wu, Sam Moore, Guy Ben-Dov, Chen Dror, Ze'ev Lindenfeld, David Gready, Mark Ghinovker, Mike Adel

Proceedings Volume 9778, 97782J (2016) https://doi.org/10.1117/12.2219181

KEYWORDS: Metrology, Overlay metrology, Electromagnetic simulation, Reflectivity, Diffraction, Semiconducting wafers, Inspection, Scatterometry, Polarization, Device simulation, Interference (communication), Optical design, Light sources

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Proceedings Article | 8 March 2016 Paper

Metrology target design simulations for accurate and robust scatterometry overlay measurements

Guy Ben-Dov, Inna Tarshish-Shapir, David Gready, Mark Ghinovker, Mike Adel, Eitan Herzel, Soonho Oh, DongSub Choi, Sang Hyun Han, Mohamed El Kodadi, Chan Hwang, Jeongjin Lee, Seung Yoon Lee, Kuntack Lee

Proceedings Volume 9778, 97783B (2016) https://doi.org/10.1117/12.2219108

KEYWORDS: Overlay metrology, Metrology, Critical dimension metrology, Scatterometry, Optical testing, Image processing, Scatter measurement, Optical metrology, Diffraction gratings, Diffraction, Semiconducting wafers, Wafer testing, Device simulation

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Proceedings Article | 10 April 2015 Paper

Stack and topography verification as an enabler for computational metrology target design

Michael Adel, Inna Tarshish-Shapir, David Gready, Mark Ghinovker, Chen Dror, Stephane Godny

Proceedings Volume 9424, 94240D (2015) https://doi.org/10.1117/12.2086084

KEYWORDS: Metrology, Scanning electron microscopy, Diffraction gratings, Overlay metrology, Uncertainty analysis, Performance modeling, Diffraction, Scatterometry, Critical dimension metrology, Image processing

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SPIE Journal Paper | 6 October 2014 Open Access

DongSub Choi, Tal Itzkovich, Inna Tarshish-Shapir, Eros Huang, Charlie Chen, George K. Huang, Yuan Chi Pai, Jimmy C. Wu, Yu Wei Cheng, Simon C. Hsu, Chun Chi Yu, Nuriel Amir, David Tien, Kelly T. Kuo, Takeshi Kato, Osamu Inoue, Hiroki Kawada, Yutaka Okagawa, Luis Huang, Matthew Hsu, Amei Su

JM3, Vol. 13, Issue 04, 041404, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041404

KEYWORDS: Metrology, Overlay metrology, Calibration, Optical testing, Etching, Inspection, Scanning electron microscopy, Imaging metrology, Electron microscopes, Measurement devices

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Proceedings Article | 18 April 2013 Paper

DCM: device correlated metrology for overlay measurements

Charlie Chen, George K. Huang, Yuan Chi Pai, Jimmy C. Wu, Yu Wei Cheng, Simon C. Hsu, Chun Chi Yu, Nuriel Amir, Dongsub Choi, Tal Itzkovich, Inna Tarshish-Shapir, David Tien, Eros Huang, Kelly T. Kuo, Takeshi Kato, Osamu Inoue, Hiroki Kawada, Yutaka Okagawa, Luis Huang, Matthew Hsu, Amei Su

Proceedings Volume 8681, 86812R (2013) https://doi.org/10.1117/12.2011363

KEYWORDS: Overlay metrology, Metrology, Calibration, Optical testing, Etching, Measurement devices, Scanning electron microscopy, Inspection, Lithography, Scanners

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Proceedings Article | 10 April 2013 Paper

Multi layer overlay measurement recent developments

Nuriel Amir, Nimrod Shuall, Inna Tarshish-Shapir, Philippe Leray

Proceedings Volume 8681, 86812V (2013) https://doi.org/10.1117/12.2025865

KEYWORDS: Overlay metrology, Metrology, Optical alignment, Optical lithography, Metals, Binary data, Time metrology, Double patterning technology, Personal protective equipment, Lithography

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One of the main challenges related to the growing number of Litho layers and most specifically to Multi Patterning, is the ability to align to many layers at once. In the past things were simple, the alignment tree was set so that every layer aligns to one layer and at the most is measured versus two layers, such as contact to poly and Isolation. Today, even at the 20 nm node there are double and triple patterning for critical layers such as Isolation, poly, contact and Metal 1. This forces a much more complex alignment tree and Overlay (OVL) measurement. Layers are sometimes aligned to an average of previous layers, to different layers at different orientations and disposition is done based on several measurements. This growing challenge increases the number of Overlay measurements significantly, increases the target area and present the need to make many measurement from different layers consistent. Another challenge is the increased number of recipes and the need for flexible alignment tree scheme during development. These challenges are addressed by Multi layer targets such as Triple AIM, Multilayer AIMid and the Blossom and micro-Blossom targets where alignment marks from multiple patterning steps and layers were densely populated. A single OVL reading is calculated by the metrology tool on a selected pair or multiple pair average¹. Here we propose the Multi-Layer measurement that provides an additional degree of metrology and solution to these challenges: in one measurement several overlay results are achieved, the results are always self-consistent. It allows at the same measurement grab to look back and disposition previous layers after their processing was completed. It allows a flexible alignment tree without the need to add or change targets, even during ramp and production. It reduces the number of recipes that need to be created and managed. And it also reduces significantly the area needed for the targets. In this paper we will show recent results from IMEC, on Back-End (BE) stack of four layers including one double patterning layer. We compared several target sizes, showing that such a target can fit within the Indie requirements of 10x10 μm. Results show that there is not a lot of need to compromise on performance in order to get good Multi-Layer measurements. Eventually we will describe process compatible targets which are needed more in the Front End (FE) layers. Looking forward at the increased complexity needed for future nodes and multiple pitch splitting lithography, it is encouraging to see that for Overlay we can simplify metrology instead of making it follow the complexity trend.

Proceedings Article | 20 April 2011 Paper

Improved overlay control using robust outlier removal methods

John Robinson, Osamu Fujita, Hiroyuki Kurita, Pavel Izikson, Dana Klein, Inna Tarshish-Shapir

Proceedings Volume 7971, 79711G (2011) https://doi.org/10.1117/12.879494

KEYWORDS: Overlay metrology, Data modeling, Metrology, Semiconductor manufacturing, Semiconductors, Semiconducting wafers, Process control, Numerical simulations, Data processing, Instrument modeling

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