Mr. Hung-Eil Kim Profile

Hung-Eil Kim

SMTS at Spansion Inc

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Author

Publications (13)

Proceedings Article | 17 October 2008 Paper

Challenges for the quality control of assist features for 45nm node technology and beyond

Lin Wang, Todd Lukanc, Makoto Takahashi, Hung-Eil Kim, Khoi Phan, Taichi Yamazaki, Yosuke Kojima, Wataru Nozaki, Takashi Haraguchi, Yoshimitsu Okuda

Proceedings Volume 7122, 71220Z (2008) https://doi.org/10.1117/12.800916

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Optical proximity correction, Line edge roughness, Chromium, Photoresist processing, Resolution enhancement technologies, Reticles, SRAF

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Proceedings Article | 26 April 2001 Paper

ArF lithography: challenges, resolution capability, and the mask error enhancement function (MEEF)

Marina Plat, Christopher Lyons, Amada Wilkison, Jeff Schefske, Hung-Eil Kim

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425202

KEYWORDS: Photomasks, Critical dimension metrology, Lithography, Optical proximity correction, Monochromatic aberrations, Photoresist processing, Binary data, Back end of line, Printing, Polymers

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Proceedings Article | 26 July 1999 Paper

Effect of mask critical dimension error for subquarter-micron contact hole

Hung-Eil Kim, Jun-Sung Chun, Stanley Barnett, James Shih

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354400

KEYWORDS: Photomasks, Critical dimension metrology, Binary data, Semiconducting wafers, Cadmium, Printing, Phase shifts, Image processing, Photoresist processing, Scanners

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Proceedings Article | 11 June 1999 Paper

Novel hardening methods of DUV chemically amplified photoresist by ion implantation and its application to new organic ARC material and bilayer process

Jun-Sung Chun, Hung-Eil Kim, Stanley Barnett, James Shih

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350190

KEYWORDS: Ions, Etching, Photoresist materials, Argon, Ion implantation, Deep ultraviolet, Photoresist processing, Resistance, Dry etching, Chemically amplified resists

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Proceedings Article | 29 June 1998 Paper

Optimization of stepper parameters and its design rule for an attenuated phase-shifting mask

Hung-Eil Kim, Stanley Barnett, James Shih

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310782

KEYWORDS: Printing, Photomasks, Critical dimension metrology, Optical proximity correction, Phase shifts, Semiconducting wafers, Etching, Defect inspection, Transmittance, Lithography

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Proceedings Article | 7 June 1996 Paper

Practical implementation of alternating PSM to memory device of sub-0.25-um technology

Chang-Nam Ahn, Hung-Eil Kim, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240916

KEYWORDS: Photomasks, Semiconducting wafers, Phase shifts, Quartz, Deep ultraviolet, Lithography, Critical dimension metrology, Light scattering, Printing, Scanning electron microscopy

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Proceedings Article | 8 December 1995 Paper

Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography

Hung-Eil Kim, Chang-Nam Ahn, KeunYoung Kim, Ki-Ho Baik

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228197

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Phase shifts, Photomicroscopy, Printing, Lithography, Reticles, Critical dimension metrology, Quartz

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Proceedings Article | 26 May 1995 Paper

Study of optical proximity effects using off-axis illumination with attenuated phase shift mask

Chang-Nam Ahn, Ki-Ho Baik, Yong-Suk Lee, Hung-Eil Kim, Ikboum Hur, YoungSik Kim, Ju-Hwan Kim, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209254

KEYWORDS: Transmittance, Photomasks, Phase shifts, Lithography, Super resolution, Critical dimension metrology, Photoresist processing, Semiconducting wafers, Scanning electron microscopy, Optical lithography

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Proceedings Article | 26 May 1995 Paper

Implementation of i-line lithography to 0.30 um design rules

KeunYoung Kim, Hung-Eil Kim, Il-Ho Lee, Jin-Soo Kim, Jun-Sung Chun, Ikboum Hur, Seung-Chan Moon, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209286

KEYWORDS: Lithography, Deep ultraviolet, Photomasks, Chromium, Photoresist processing, Phase shifts, Resist chemistry, Optical lithography, Chemically amplified resists, Critical dimension metrology

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The optical lithography is extending its life by combining high numerical aperture (NA) optics and shorter wavelength. The shorter wavelength lithography has required the new developments of related technologies. In particular, DUV resists require an entirely different resist chemistry. Much progress has been demonstrated in the field of transparent chemically amplified resists with high sensitivity. However, this DUV lithography ((lambda) equals 248 nm) has been delayed for mass production due to their limitations, such as (i) delay time effects, (ii) high cost ownership due to expensive resist materials and laser maintenance, and (iii) critical dimension (CD) variation over topography caused by multireflection of topographic features. On the other hand, i- line lithography ((lambda) equals 365 nm) has apparently been applied to 64M DRAM of 0.35 micrometers design rule, and attempted to 0.30 micrometers technology which corresponds to 2nd generation 64M DRAM or 1st generation 256 M DRAM. It might be achieved by combination of off-axis illumination (OAI), phase shift mask (PMS) and advanced resist process technique of i-line lithography. Therefore, i-line lithography can be more practical method rather than DUV lithography for the mass production. In this paper, we have optimized the i-line lithographic techniques for the various pattern shape and density for 0.30 micrometers design rule. Optimum duty ratio was tried to find for line and space, contact hole patterns. The basic rule is to keep the minimum Cr width over 0.30 micrometers mask. OAI have been applied to get higher contrast of line and space, and even contact hole patterns, and achieve good pattern fidelities of island patterns. By the implementation of OAI, process latitudes were greatly improved compared to that of conventional techniques. In order to optimize the process over the actual topography, optimum numerical aperture (NA) and aperture of the OAI were selected. In conclusion, 0.30 micrometers design rule device was successfully fabricated by optimizing the advanced i-line lithographic techniques.

Proceedings Article | 26 May 1995 Paper

Effect of pattern density for contact windows in an attenuated phase shift mask

Ikboum Hur, Ju-Hwan Kim, Il-Ho Lee, Hung-Eil Kim, Chang-Nam Ahn, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209260

KEYWORDS: Transmittance, Lithography, Photomasks, Phase shifts, Semiconducting wafers, Scanning electron microscopy, Photomicroscopy, Phase shifting, Optical lithography, Mask making

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Proceedings Article | 17 May 1994 Paper

Quarter-micrometer i-line lithography using an alternating phase-shift mask

Hung-Eil Kim, YoungSik Kim, Chul-Seung Lee, Young-Mog Ham, Dong-Jun Ahn, Soo-Han Choi

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175457

KEYWORDS: Photomasks, Phase shifts, Lithography, Transmittance, Critical dimension metrology, Optical lithography, Lithographic illumination, Phase shifting, Reticles, Photoresist materials

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Proceedings Article | 17 May 1994 Paper

Fundamental analysis on fabrication of 256-MB DRAM using phase-shift mask technology

Young-Mog Ham, YoungSik Kim, Ikboum Hur, Ki-Yeop Park, Hung-Eil Kim, Dong-Jun Ahn, Soo-Han Choi

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175419

KEYWORDS: Photomasks, Photoresist processing, Phase shifts, Transmittance, Image processing, Semiconducting wafers, Lithography, Process control, Metals, Phase shifting

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Proceedings Article | 1 May 1994 Paper

Quantitive analysis of the proximity effect in optical lithographic process

Sang-Man Bae, Hung-Eil Kim, Young-Mog Ham, Seung-Chan Moon, Soo-Han Choi

Proceedings Volume 2196, (1994) https://doi.org/10.1117/12.174128

KEYWORDS: Lithography, Photoresist processing, Critical dimension metrology, Very large scale integration, Optical lithography, Semiconducting wafers, Photoresist developing, Photoresist materials

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Showing 5 of 13 publications

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