Dr. Hoyong Jung Profile

Dr. Hoyong Jung

Inventor at SK Hynix Inc

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 23 October 2015 Paper

Investigation of scum type growing defects on attenuated PSM and its prevention

Jihwan Choi, Yongho Kim, Dongwook Lee, Hoyong Jung, Snagpyo Kim, Donggyu Yim

Proceedings Volume 9635, 96351O (2015) https://doi.org/10.1117/12.2196069

KEYWORDS: Air contamination, Chromium, Photomasks, Critical dimension metrology, Semiconducting wafers, Oxides, Deep ultraviolet, Transmittance, Scanners, Phase shifts

Read Abstract +

Proceedings Article | 23 October 2015 Paper

Advanced repair solution of clear defects on HTPSM by using nanomachining tool

Hyemi Lee, Munsik Kim, Hoyong Jung, Sangpyo Kim, Donggyu Yim

Proceedings Volume 9635, 96351J (2015) https://doi.org/10.1117/12.2196941

KEYWORDS: Quartz, Etching, Deposition processes, Photomasks, Critical dimension metrology, Phase shifts, Scanning electron microscopy, Particles, Chromium, Image restoration

Read Abstract +

Proceedings Article | 9 July 2015 Paper

The method of quartz damage recovery in the photomask repair process

Hoon Namkung, MunSik Kim, EuiSang Park, HoYong Jung, SangPyo Kim, DongGyu Yim

Proceedings Volume 9658, 965806 (2015) https://doi.org/10.1117/12.2193081

KEYWORDS: Quartz, Photomasks, Critical dimension metrology, Distortion, Light scattering, Silica, Particles, Surface roughness, Optical lithography, Defect detection

Read Abstract +

Proceedings Article | 16 September 2014 Paper

Defects caused by blank masks and repair solution with nanomachining for 20nm node

HyeMi Lee, ByungJu Kim, MunSik Kim, HoYong Jung, Sang Pyo Kim, DongGyu Yim

Proceedings Volume 9235, 92350G (2014) https://doi.org/10.1117/12.2066278

KEYWORDS: Photomasks, Inspection, Particles, Scanning electron microscopy, Manufacturing, Image processing, Chromium, Defect detection, Defect inspection, Transmittance

Read Abstract +

Proceedings Article | 9 September 2013 Paper

The recovering method of etch chamber condition by using the optical emission spectroscopy monitoring system

Choong Han Ryu, Jae Young Jun, Ho Yong Jung, Sang Pyo Kim, Dong Gyu Yim

Proceedings Volume 8880, 88801X (2013) https://doi.org/10.1117/12.2026183

KEYWORDS: Etching, Aluminum, Plasma, Emission spectroscopy, Critical dimension metrology, Photomasks, Molybdenum, Optical lithography, Quartz, Silicon

Read Abstract +

Proceedings Article | 8 November 2012 Paper

The plasma etching methods for minimizing mask CD variation by cleaning process

Hyun Shin, Soo Jeong, Ho Jung, Sang Kim, Dong Yim

Proceedings Volume 8522, 852215 (2012) https://doi.org/10.1117/12.964984

KEYWORDS: Plasma treatment, Oxygen, Etching, Critical dimension metrology, Chromium, Plasma etching, Molybdenum, Chlorine, Photomasks, Ions

Read Abstract +

There has been a growing demand for more precise Mask CD MTT (Critical Dimension Mean to Target) control by shrinking the semiconductor device. Generally, The CD MTT is determined by patterning process such as writing, develop, and etch. But, additional CD MTT variation often occurs by cleaning process after patterning process. As a result, it is important to preserve the CD MTT for minimizing CD variation by cleaning process. The cleaning process of photomask is becoming more critical for 32nm node and below because the size of defect and SRAF pattern is in the same range. In order to achieve high first cleaning pass yields, intensive cleaning method depending on media not physical force is still essential to photomask manufacturing and these cleaning processes bring about considerable CD MTT change. Therefore, it is necessary to increase the durability of MoSi material of attenuated HTPSM (Half Tone Phase Shift Mask) by the new surface treatment method. In this study, we presented the plasma etching technique for Cr strip etch in the 2nd process of the attenuated HTPSM for minimizing CD variation by cleaning process. Diverse dry etching processes are investigated to improve the durability of the MoSi patterns. In order to evaluate the surface modification of the MoSi film, surface compositions are analyzed by XPS (X-ray Photoelectron Spectroscopy), TOF-SIMS (Time of Flight Secondary Ion Mass Spectrometry), and EELS (Electron Energy Loss Spectroscopy). The variation of CD MTT and optical properties are also evaluated by CD SEM and AIMS (Aerial Image Measurement System), respectively. The XPS analysis shows that sidewall passivation films are formed during the main etch process and then modified at the over etch step and additional in-situ O2 plasma treatment. The concentration of the MoO3 is increased when over etch step and in-situ O2 plasma treatment are added. The difference of CD shift between initial measurement and 2nd measurement after cleaning process depends on plasma etching conditions. Consequently, the increase in the peak intensity of MoO3 that is less soluble than that of MoO2 leads to preserve CD by cleaning chemicals.

Proceedings Article | 8 November 2012 Paper

Advanced photomask fabrication process to increase pattern reliability for sub-20nm node

Dong Shin, Sang Jo, Hee Jang, Yun Hong, Dae Hwang, Chung Choi, Dong Jang, Ho Jung, Tae Ha, Sang Kim, Dong Yim

Proceedings Volume 8522, 85220R (2012) https://doi.org/10.1117/12.964974

KEYWORDS: Etching, Chromium, Photomasks, Particles, Critical dimension metrology, Inspection, Reliability, Optics manufacturing, Manufacturing

Read Abstract +

Proceedings Article | 29 September 2010 Paper

Advanced mask CD MTT correction technique through improvement of CD measurement repeatability of CD SEM

Choong Han Ryu, Ho Yong Jung, Jea Young Jun, Tae Joong Ha, Chang Reol Kim, Oscar Han

Proceedings Volume 7823, 78232J (2010) https://doi.org/10.1117/12.864522

KEYWORDS: Critical dimension metrology, Chromium, Scanning electron microscopy, Etching, Dry etching, Image processing, Reliability, Electron beam lithography, Calibration, Photomasks

Read Abstract +

Proceedings Article | 1 November 2007 Paper

Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks

Jun Chun, Taejoong Ha, Hoyong Jung, Sangjin Jo, Oscar Han

Proceedings Volume 6730, 673044 (2007) https://doi.org/10.1117/12.746638

KEYWORDS: Light sources, Quartz, Floods, Optical lithography, Phase shifts, Photoresist processing, Photomasks, Chromium, Transmittance, Optical properties

Read Abstract +

Proceedings Article | 30 October 2007 Paper

The advanced mask CD MTT control using dry etch process for sub 65 nm tech

Sang Jin Jo, Ho Yong Jung, Dong Wook Lee, Jae Cheon Shin, Jea Young Jun, Tae Joong Ha, Oscar Han

Proceedings Volume 6730, 673008 (2007) https://doi.org/10.1117/12.746646

KEYWORDS: Etching, Chromium, Dry etching, Critical dimension metrology, Photomasks, Reliability, Electron beams, Scanning electron microscopy, Process control, Semiconductors

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Design for CD correction strategy using a resist shrink method via UV irradiation for defect-free photomask

Jin Ho Ryu, Dong Wook Lee, Ho Yong Jung, Sang Pyo Kim, Oscar Han

Proceedings Volume 6730, 67300K (2007) https://doi.org/10.1117/12.746787

KEYWORDS: Chromium, Critical dimension metrology, Etching, Photoresist processing, Ultraviolet radiation, Photomasks, Dry etching, Inspection, Photoresist materials, Oxygen

Read Abstract +

As the specification for photomask becomes tighter, it is strongly demanded for achieving precise CD MTT (critical dimension mean to target) and enhanced defect controllability in photomask fabrication. First of all, it is necessary that reducing the factors of CD MTT error and introducing the reliable method to correct CD error for accurate CD requirement of attenuated PSM (phase shift mask). From this point of view, one of CD correction methods which consist of Cr CD measurement step after resist strip (strip inspection CD: SI CD) and additional corrective Cr dry etch step was developed. Previous SI CD correction process resulted in accurate CD control within the range of CD MTT. However it was not appropriate for defect control due to additional resist processes for selective protection of Cr pattern during CD correction process. In this study, the method for achieving precise CD MTT by correcting CD error without any resist process is investigated. It is not suitable for the CD correction process to control CD MTT precisely that Cr etched resist (etch inspection CD: EI CD) is very vulnerable to E-beam scanning during CD measurement. Otherwise, photoresist after Cr etch selectively shrinks via UV irradiation under ozone (O3) condition, which drives a reduction of CD MTT error as a result of accurate CD measurement (UV-irradiation inspection CD: UI CD). Moreover, it is not necessary any resist process for Cr protection due to UV irradiated resist as enough for a etch barrier. It is a strong advantage of novel CD correction method. This strategy solves the problems such as both CD measurement error on the EI CD correction method and defects originated from resist process on the SI CD correction method at once. For the successful incorporation of UI CD correction method, several items related with CD should be evaluated: accuracy and repeatability of CD measurement under UI CD, control of CD MTT and CD uniformity, additional corrective etch bias for UI CD, independence of corrective Cr etch process from UV irradiated resist, isolated-dense CD difference,.. etc. In this paper, strategy of design for the progressive CD correction method for defect-free photomask and process details will be discussed.

Proceedings Article | 20 October 2006 Paper

Mask CD correction method using dry-etch process

Ho Yong Jung, Tae Joong Ha, Jae Cheon Shin, Ku Cheol Jeong, Young Kee Kim, Oscar Han

Proceedings Volume 6349, 63490B (2006) https://doi.org/10.1117/12.686537

KEYWORDS: Critical dimension metrology, Chromium, Etching, Dry etching, Photoresist processing, Photomasks, Reliability, Scanning electron microscopy, Phase shifts, Electron beam lithography

Read Abstract +

Proceedings Article | 6 December 2004 Paper

Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions

Dong Wook Lee, Ho Yong Jung, Mun Sik Kim, Jun Sik Lee, Yong Kyoo Choi, Oscar Han

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569015

KEYWORDS: Ions, Ultraviolet radiation, Oxygen, Chemical analysis, Contamination, Phase shifts, Photomasks, Air contamination, Atomic force microscopy, Transmission electron microscopy

Read Abstract +

Proceedings Article | 20 August 2004 Paper

Investigation of sub-pellicle defect formation at KrF lithography

Junsik Lee, Dong Wook Lee, Mun-Sik Kim, Ho-Yong Jung, Oscar Han

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557703

KEYWORDS: Pellicles, Ions, Photomasks, Reticles, Adhesives, Inspection, Chemical analysis, Raman spectroscopy, Chromatography, Scanning electron microscopy

Read Abstract +

Proceedings Article | 20 August 2004 Paper

Investigation of Cr defect in high Cr load logic mask

Ho-Yong Jung, Sung Jin Choi, Mun-Sik Kim, Dong Wook Lee, Junsik Lee, Oscar Han

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557677

KEYWORDS: Chromium, Logic, Etching, Dry etching, Photomasks, Scanning electron microscopy, Image processing, Photoresist processing, Inspection, Atomic force microscopy

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Develop process optimization for CD uniformity improvement

Jae-Cheon Shin, Joon-Il Won, Ho-Yong Jung, Mun-Sik Kim, Yong-Kyoo Choi, Oscar Han

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410735

KEYWORDS: Photomasks, Photoresist processing, Fluctuations and noise, Etching, Critical dimension metrology, Mask making, Optical lithography, Chemical reactions, Plasma etching, Semiconducting wafers

Read Abstract +

Showing 5 of 16 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years