Prof. Herbert Barry Harrison Profile

Prof. Herbert Barry Harrison

Dean at Griffith Univ

SPIE Involvement:

Author

Proceedings Article | 29 December 2005 Open Access

A unique new microtechnology facility for Australia

H. Harrison

Proceedings Volume 6035, 603501 (2005) https://doi.org/10.1117/12.637891

KEYWORDS: Silicon carbide, Silicon, Microtechnology, Epitaxy, Electronics, Semiconducting wafers, Semiconductors, Optoelectronic devices, Patents, Transistors

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Proceedings Article | 2 April 2004 Paper

The use of titanium and titanium dioxide as masks for deep silicon etching

Olly Powell, Denis Sweatman, H. Barry Harrison

Proceedings Volume 5276, (2004) https://doi.org/10.1117/12.522845

KEYWORDS: Etching, Silicon, Titanium, Metals, Photomasks, Oxides, Nickel, Thermal oxidation, Sputter deposition, Wet etching

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Proceedings Article | 30 March 2004 Paper

QsRAM: the new memory technology

Sima Dimitrijev, Herbert Harrison

Proceedings Volume 5274, (2004) https://doi.org/10.1117/12.531136

KEYWORDS: Silicon carbide, Silicon, Capacitors, Transistors, Oxides, Semiconductors, Switching, Packaging, Field effect transistors

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Proceedings Article | 21 March 2001 Paper

Prototype micromachined thin film electrode array for cochlear implants

Joanna Parker, Yvonne Duan, Jim Patrick, H. Barry Harrison, Olaf Reinhold, Graeme Clark

Proceedings Volume 4235, (2001) https://doi.org/10.1117/12.420853

KEYWORDS: Electrodes, Silicon, Capacitance, Thin films, Platinum, Dielectrics, Radium, Resistance, Dielectric spectroscopy, Micromachining

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Proceedings Article | 12 November 1999 Paper

Novel U-groove channel for self-alignment of optical fibers with optical quality end-polished silicon rib waveguides using wet chemical micromachining techniques

Nam Quoc Ngo, Michel Rosa, Denis Sweatman, Sima Dimitrijev, H. Barry Harrison, Andrew Titmarsh

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370370

KEYWORDS: Waveguides, Optical alignment, Silicon, Fabrication, Polishing, Etching, Semiconducting wafers, Wet etching, Optical fibers, Wafer-level optics

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Proceedings Article | 8 October 1999 Paper

Development of power accumulation-type SiC MOSFET

Handoko Linewih, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 3893, (1999) https://doi.org/10.1117/12.368421

KEYWORDS: Field effect transistors, Silicon carbide, Electrons, Resistance, Molybdenum, Oxides, Ions, Interfaces, Monte Carlo methods, Electrodes

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Proceedings Article | 1 October 1999 Paper

Physical and electrical properties of thin dielectrics prepared by photoassisted growth in an NO environment

Phillipe Jamet, H. Barry Harrison, Sima Dimitrijev, Philip Tanner

Proceedings Volume 3892, (1999) https://doi.org/10.1117/12.364497

KEYWORDS: Ultraviolet radiation, Dielectrics, Lamps, Silicon, Mercury, Nitrogen, Ultraviolet sources, NOx, Oxides, Semiconducting wafers

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Proceedings Article | 1 October 1999 Paper

Comparison of wet and dry gate oxides for SiC MOSFETs

Philip Tanner, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 3892, (1999) https://doi.org/10.1117/12.364498

KEYWORDS: Oxides, Silicon carbide, Interfaces, Dielectrics, Field effect transistors, Carbon, Silicon, Ultraviolet radiation, Microwave radiation, Oxidation

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Proceedings Article | 29 September 1999 Paper

Novel fiber-to-waveguide coupling method using silicon-on-insulator micromachining techniques

Nam Quoc Ngo, Michel Rosa, Denis Sweatman, Sima Dimitrijev, H. Barry Harrison, Andrew Titmarsh

Proceedings Volume 3891, (1999) https://doi.org/10.1117/12.364468

KEYWORDS: Waveguides, Optical alignment, Silicon, Polishing, Etching, Fabrication, Semiconducting wafers, Wet etching, Wafer-level optics, Interfaces

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Proceedings Article | 14 November 1997 Paper

Improved operation of micromechanical comb-drive actuators through the use of a new angled comb-finger design

Michel Rosa, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 3242, (1997) https://doi.org/10.1117/12.293578

KEYWORDS: Actuators, Microelectromechanical systems, Finite element methods, Optical simulations, Silicon, Microelectronics, Microactuators, Profilometers, Capacitance, Iris

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Proceedings Article | 16 September 1994 Paper

Methods for parametric yield control for future 0.1-um deep submicron MOSFET manufacturing

Renate Sitte, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 2336, (1994) https://doi.org/10.1117/12.186790

KEYWORDS: Semiconducting wafers, Manufacturing, Control systems, Oxides, Field effect transistors, Process control, Monte Carlo methods, Integrated circuits, Yield improvement, Etching

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Proceedings Article | 9 September 1994 Paper

Model for the growth of oxides in N2O

Sima Dimitrijev, H. Barry Harrison, Denis Sweatman

Proceedings Volume 2335, (1994) https://doi.org/10.1117/12.186066

KEYWORDS: Oxides, Data modeling, Nitrogen, Silicon, Interfaces, Chlorine, Dielectrics, Semiconductors, NOx, Oxidation

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Proceedings Article | 9 September 1994 Paper

High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

Ze-Qiang Yao, H. Barry Harrison, Sima Dimitrijev, Y. Yeow

Proceedings Volume 2335, (1994) https://doi.org/10.1117/12.186065

KEYWORDS: Dielectrics, Oxides, NOx, Interfaces, Silicon, Nitrogen, Silicon films, Molybdenum, X-rays, Photoemission spectroscopy

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Proceedings Article | 1 January 1992 Paper

Dynamic design processing of integrated circuits for an "on target" end product

Renate Sitte, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 1594, (1992) https://doi.org/10.1117/12.56624

KEYWORDS: Oxides, Monte Carlo methods, Integrated circuits, Semiconducting wafers, Integrated circuit design, Device simulation, Transistors, Metrology, Yield improvement, Process control

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Proceedings Article | 1 December 1991 Paper

Technique of assessing contact ohmicity and their relevance to heterostructure devices

H. Barry Harrison, Geoffrey Reeves

Proceedings Volume 1596, (1991) https://doi.org/10.1117/12.51011

KEYWORDS: Resistance, Field effect transistors, Gallium arsenide, Silicon, Reliability, Very large scale integration, Heterojunctions, Metals, Semiconductors, Interfaces

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