The field of quantum computing has evolved into a large interdisciplinary community where significant resources are invested worldwide. As a result, accelerated progress is achieved and we are at the beginning of a new age of computation, developing programmable quantum systems towards universal quantum computers. Quantum computers promise to solve certain mathematical problems that are intractable to classical computers. Quantum computing systems are built from the bottom up reaching the limits of what can be classically simulated. The IBM Quantum Development Roadmap describes our vision of creating a quantum computing ecosystem delivering quantum applications through the cloud. This requires developing the entire quantum computing stack starting from the qubit and quantum processor technology, control electronics to software, algorithms and applications for quantum computing, implemented in the cloud and integrated with high performance computing. In this presentation the recent developments of our quantum computing systems and the scientific advances that enabled scaling superconducting quantum processors to 127 qubits are presented. Besides scale, also quality and speed will be discussed building the key metric for measuring the performance of quantum computation. Examples of applications where the computational power of quantum computing could make a difference are provided.
We have recently developed a novel III-V integration scheme, where III-V material is grown
directly on top of Si within oxide nanotubes or microcavities which control the geometry of
nanostructures. This allows us to grow III-V material non-lattice matched on any crystalline
orientation of Si, to grow arbitrary shapes as well as abrupt heterojunctions, and to gain more
flexibility in tuning of composition. In this talk, applications for electronic devices such as
heterojunction tunnel FETs and microcavity III-V lasers monolithically integrated on Si will be
discussed along with an outlook for the future.
Michael Reimer, Maarten van Kouwen, Maria Barkelid, Moïra Hocevar, Maarten van Weert, Rienk Algra, Erik Bakkers, Mikael Björk, Heinz Schmid, Heike Riel, Leo Kouwenhoven, Valery Zwiller
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single-Si-nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
Michael Reimer, Maarten van Kouwen, Maria Barkelid, Moïra Hocevar, Maarten van Weert, Rienk Algra, Erik Bakkers, Mikael Björk, Heinz Schmid, Heike Riel, Leo Kouwenhoven, Val Zwiller
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
The role of copper-phthalocyanine (CuPc) has intermediate layer between the anode and the hole-transport layer in multilayer organic light-emitting devices (OLEDs) was studied. The OLEDs consisted of CuPc, N,N'-di(naphtalene-1-yl)-N,N'-diphenyl-benzidine (NPB) as hole-transport layer and tris-(8-hydroxyquinolinato)-aluminum (Alq3) as electron-transport and emitting layer sandwiched between a high-work-function metal and a semi-transparent calcium cathode. A combinatorial approach that allows the simultaneous fabrication of 10 x 10 individual devices was used to vary the thicknesses of CuPc and NPB over a broad range from 0 to 45 nm and from 10 to 100 nm, respectively. Systematic current-voltage and impedance measurements revealed a redistribution of the internal electric field of the CuPc/NPB/Alq3 three-layer structure compared to that of the NPB/Alq3 bilayer OLED. It was demonstrated that the hole transport is mainly controlled by the internal energy barrier at the CuPc/NPB interface. The fact that CuPc strongly impedes hole injection into NPB also has a significant impact on the frequency-dependent behavior of the capacitance, especially the cutoff frequency.
In order to get a detailed understanding of organic light-emitting devices (OLEDs), optimize their performance and provide reliable data for device modeling, we have developed an ultra-high vacuum (UHV) evaporation system for combinatorial studies. Our system allows the simultaneous fabrication of 10 x 10 individual devices on one substrate enabling a systematic variation of material combinations and electrodes as well as device parameters such as layer thickness, layer sequence, dye dopant concentrations. Here, we present an overview of the capabilities of combinatorial methods for electrical and electro-optical device optimization. We show results on multilayer OLEDs ranging from the conventional copper-phthalocyanine (CuPc)/N,N'-di(naphtalene-1-yl)-N,N'-diphenyl-benzidine (NPB)/ and tris-(8-hydroxyquinolinato)aluminum (Alq) trilayer device to double-doped, red-emitting OLEDs with efficiencies up to 1.5 cd/A at 20 mA/cm2 measured through a semitransparent metal electrode and CIE color coordinates of x=0.65, y=0.34.
The influence of interfacial charges on the device characteristics of multilayer organic light-emitting diodes (OLEDs) is investigated, and a concept to improve device performance is presented. We studied devices consisting of copper phthalocyanine (CuPc) as hole injection and buffer layer, N, N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) as hole transport layer, and tris(8- hydroxyquinolinato)aluminum (Alq3) as electron transport and emitting layer sandwiched between a high-work-function metal and a semi-transparent calcium electrode. Detailed current-voltage measurements show that the device characteristics in negative bias direction and at low positive bias below the built-in voltage depend strongly on the bias sweep direction, indicating that interfacial charges have a pronounced influence on the device characteristics. Low-frequency capacitance-voltage experiments reveal a voltage-independent capacitance in negative bias direction and a significant increase between 0 and 2 V, evidence of a redistribution of the internal electric field in this device configuration. Time-resolved electroluminescence (EL) measurements proved that also the EL response time at low voltages is governed by the accumulation of charge carriers inside the device rather than by their transport. Optimizing the device structure by grading the organic-organic interfaces results in an enhanced current flow, an improved brightness, and a faster EL response time. Our investigations clearly indicate that the abrupt CuPc-NPB as well as the NPB-Alq3 interface significantly influence the performance of our multilayer OLED.
Multilayer organic light-emitting diodes with a well-defined emission region are ideal systems to investigate the underlying mechanisms of device operation. In this paper we give a brief overview of our studies on the injection and recombination processes in blue organic light-emitting diodes. Our diodes consist of copper phthalocyanine as the hole- injection/buffer layer, the aromatic diamine N,N'- di(naphthalene-1-yl)-N,N'-diphenyl-benzidine as the hole- transport layer, a distyrylarylene derivative as the emitting layer, tris(8-hydroxy-quinoline)aluminum as the electron- injection/transport layer sandwiched between indium tin oxide (ITO) as the transparent hole injector, and low work-function metals as the electron-injecting electrode. To reveal the limiting mechanisms in device operation we investigated the influence of different anode (ITO, optimized ITO) and cathode materials (Mg:Ag, Ca, LiF/Mg:Ag) as well as different layer thicknesses on the device characteristics. These investigations revealed that the device characteristics in the low and medium voltage range are determined by the injection properties of the electrodes, whereas at higher voltages (i.e. at higher current densities) a transition from an electrode- limited injection to a bulk-limited conduction process is detectable.
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