Dr. Gennady I. Zebrev Profile

Dr. Gennady I. Zebrev

at National Research Nuclear Univ MEPhI

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 31 January 2022 Paper

Long-term irradiation effects in p-MNOS transistor: experiment results

E. Mrozovskaya, P. Chubunov, G. Zebrev

Proceedings Volume 12157, 1215710 (2022) https://doi.org/10.1117/12.2624612

KEYWORDS: Transistors, Annealing, Oxides, Silicon, Sensors, Data modeling, Absorption, Temperature metrology, Semiconductors, Calibration

Read Abstract +

Proceedings Article | 31 January 2022 Paper

Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes

V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, M. Shur

Proceedings Volume 12157, 121570V (2022) https://doi.org/10.1117/12.2624419

KEYWORDS: Field effect transistors, Resistance, Transistors, Amplifiers, Resistors, Doping, Semiconductors

Read Abstract +

Proceedings Article | 31 January 2022 Paper

A universal approach to FET compact modeling: case study for MESFETs and OFETs

D. Malich, G. Zebrev

Proceedings Volume 12157, 121570Z (2022) https://doi.org/10.1117/12.2624179

KEYWORDS: Field effect transistors, Transistors, Semiconductors, TCAD, Systems modeling, Mathematical modeling, Instrument modeling, Electronics, Capacitance, Modulation

Read Abstract +

Proceedings Article | 15 March 2019 Paper

A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, M. Shur

Proceedings Volume 11022, 110220H (2019) https://doi.org/10.1117/12.2521880

KEYWORDS: Field effect transistors, Resistance, Numerical analysis, Semiconductors, Transistors

Read Abstract +

Proceedings Article | 15 March 2019 Paper

Compact modeling of electrical characteristics of p-MNOS based RADFETs

E. Mrozovskaya, P. Zimin, P. Chubunov, G. Zebrev

Proceedings Volume 11022, 110220I (2019) https://doi.org/10.1117/12.2521703

KEYWORDS: Transistors, Silicon, Instrument modeling, Radiation effects, Electronics, Sensors, Oxides, Radiation dosimetry, Space sensors, Calibration, Ionizing radiation effects

Read Abstract +

Proceedings Article | 30 December 2016 Paper

A simple calculation method for heavy ion induced soft error rate in space environment

A. Galimov, I. Elushov, G. Zebrev

Proceedings Volume 10224, 1022414 (2016) https://doi.org/10.1117/12.2267145

KEYWORDS: Visualization, Ions, Radiation effects, Data modeling, Particles, Magnesium, Electronics, Energy transfer, Nanoelectronics, Current controlled current source

Read Abstract +

Proceedings Article | 30 December 2016 Paper

Compact modeling of radiation-induced drain leakage current

M. Drosdetsky, V. Orlov, G. Zebrev

Proceedings Volume 10224, 1022415 (2016) https://doi.org/10.1117/12.2267161

KEYWORDS: Field effect transistors, Oxides, Annealing, Interfaces, Instrument modeling, Capacitance, Diffusion, Transistors, Power supplies, Modeling and simulation

Read Abstract +

Proceedings Article | 30 December 2016 Paper

Dielectric influence on IV curve of graphene field effect transistor

Stanislav Shostachenko, Roman Zakharchenko, Gennady Zebrev, Yaroslav Stanishevskiy, Nikolay Kargin

Proceedings Volume 10224, 102240Q (2016) https://doi.org/10.1117/12.2266244

KEYWORDS: Graphene, Transistors, Silica, Dielectrics, Silicon, Field effect transistors, Silicon films, Plasma, Chemical vapor deposition, Plasma etching

Read Abstract +

Proceedings Article | 30 December 2016 Paper

Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

Maxim Gorbunov, Gennady Zebrev

Proceedings Volume 10224, 1022416 (2016) https://doi.org/10.1117/12.2266864

KEYWORDS: Transistors, Device simulation, Oxides, CMOS technology, Field effect transistors, Radiation effects, Computer simulations, Nanoelectronics, Silicon

Read Abstract +

Proceedings Article | 18 December 2014 Paper

Modeling and simulation of dose effects in bipolar analog integrated circuits

G. Zebrev, M. Drosdetsky, A. Galimov, A. Lebedev, I. Danilov, V. Turin

Proceedings Volume 9440, 94401C (2014) https://doi.org/10.1117/12.2180758

KEYWORDS: Oxides, Annealing, Integrated circuits, Analog electronics, Temperature metrology, Interfaces, Modeling and simulation, Thermal effects, Switching, Electrons

Read Abstract +

Proceedings Article | 18 December 2014 Paper

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

R. Useinov, G. Zebrev, V. Emelyanov, A. Vatuev

Proceedings Volume 9440, 94401B (2014) https://doi.org/10.1117/12.2180756

KEYWORDS: Ions, Electrons, Oxides, Field effect transistors, Silica, Aerospace engineering, Capacitors, Scattering, Plasmons, Energy transfer

Read Abstract +

Proceedings Article | 18 December 2014 Paper

Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

Maxim Gorbunov, Pavel Dolotov, Alexandra Shnaider, Gennady Zebrev, Andrey Antonov, Anatoly Lebedev

Proceedings Volume 9440, 944019 (2014) https://doi.org/10.1117/12.2180610

KEYWORDS: Monte Carlo methods, Ions, Transistors, Oxides, Silicon, X-rays, Information operations, Power supplies, Error analysis, Field programmable gate arrays

Read Abstract +

Proceedings Article | 18 December 2014 Paper

Unified description of I-V characteristics in field-effect and bipolar transistors based on current density continuity equation solution

G. Zebrev

Proceedings Volume 9440, 944011 (2014) https://doi.org/10.1117/12.2180607

KEYWORDS: Transistors, Field effect transistors, Diffusion, Doping, Capacitance, Silicon, Germanium, Electrodes, Graphene, Molybdenum

Read Abstract +

Showing 5 of 13 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years