Infrared cameras are used in a wide variety of applications, from military to civilian. Cryogenically cooled IR cameras based on photon-detector arrays are many times more sensitive and faster than uncooled microbolometer thermal imagers.Ga-free InAs/InAsSb type 2 superlattice (T2SL) based devices have been recently fabricated and they showed a first realization of MWIR (Mid-Wave InfraRed) broadband detection up to 5μm. However the band parameters (band offsets, effect of strain, effective mass) of this material system have not been determined accurately, thus limiting the understanding and the prediction of the electronic properties of the devices. In this work we determined the relevant parameters via magnetoabsorption measurements performed on dedicated T2SL samples. Interband magneto-optical transitions lead to an accurate mapping of the Landau levels. The Landau level energies have been calculated using an 8 bands k.p model and the comparison with the experimental data provided a clear description of the T2SL band structure at low temperatures.
In a topological crystalline insulator such as Pb1-xSnxSe, massless Dirac states emerge at an interface with a trivial insulator. We demonstrate the great versatility of Pb1-xSnxSe electronic properties, which makes it a highly promising material to control the massless Dirac states emerging from topological properties. Using magnetooptical transmission spectroscopy on high quality molecular beam epitaxy grown Pb1-xSnxSe, we probe the variation of its bulk energy gap versus chemical composition, temperature, and strain. The determination of its bulk electronic properties will be of critical relevance to design heterostructures. A magneto-optical study on PbSnSe/PbEuSe superlattices will allow us to characterize the topological interface states occurring at each interface, as well as their tunability versus temperature. The engineering of these massless states is shown to be a promising route to achieve photo detection and photoemission in the terahertz range.
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