Mr. Frank Sundermann Profile

Frank Sundermann

Mask Expert at STMicroelectronics

SPIE Involvement:

Author

Publications (43)

Proceedings Article | 1 November 2022 Paper

Mask variability with extraction of SEM image contour and area measurements

Matthieu Piloto, Romain Bange, Frank Sundermann

Proceedings Volume 12472, 124720B (2022) https://doi.org/10.1117/12.2640124

KEYWORDS: Scanning electron microscopy, Metrology, Photomasks, Calibration, Reliability, Feature extraction, Critical dimension metrology, Matrices, Statistical analysis, Printing

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Proceedings Article | 24 March 2017 Paper

Study of aging behaviour on 193nm phase-shift masks

Félix Dufaye, Carlo Pogliani, Charles Crawford, Trent Hutchinson, Nicolas Thivolle, Laurent Lecarpentier, Frank Sundermann, Andrea Galbiati

Proceedings Volume 10147, 101471Z (2017) https://doi.org/10.1117/12.2257059

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Phase shifts, Logic, Transmission electron microscopy, Defect inspection, Inspection, Process control, Scanning electron microscopy, Reticles

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Chrome migration or aging phenomenon is known for 193nm binary photomasks since a few years. 193nm irradiations and time generate an oxide growth on chrome sidewalls and then cause a non-uniform increase of critical dimensions (CD) ^{[1], [2], [3, [4]}. If not prevented or detected early enough, wafer fabs are likely to face process drifts, defectivity issues and even lower yield on wafers in the worst cases. Fortunately, some solutions have been put in place in the industry. A standard cleaning and repel service at the maskshop has been demonstrated as efficient to remove the grown materials and get the mask CD back on target. Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV) ^[1], giving reliable results but also consuming additional SEM time with less precision than direct reticle measurement. Another approach is to monitor the CD uniformity directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs ^[5]. This enables ultimately to trigger the preventive cleanings rather than on predefined thresholds. However, may the 193nm Phase Shift Masks (PSM) be impacted too? In other words, should wafer fabs pay attention to this form of aging? Indeed, some publications^{[6], [7], [8]} report a growth of SiO₂, leading to the development of a high duration MoSi (modification of MoSi composition). This study will characterize the aging behaviour on a 193nm PSM contact hole layer, 40nm logic technology node. During this study, the aging phenomenon has been accelerated with the use of a test bench, to reach a CD increase up to 11nm after a cumulated exposure dose of 10kJ/cm² (equivalent to exposures of >32,000 wafers 300mm). Two dice were compared, one kept as reference without any exposure, whereas the other die was aged on the accelerated test bench. Exhaustive characterization has been performed, with CD measurements on the mask and on wafers, evaluation of lithography process windows for usual patterns and most critical features (Optical Proximity Correction hotspots). It appears that despite a consistent CD increase on the mask, the impact on wafer can be neglected, at least at this amount of exposures. Aerial CD were also analysed through a Zeiss WLCDTM to enable a prediction of wafer impact. An advanced inspection tool (KLA-Tencor X5.2 model) has been challenged as an inline monitoring method to detect the aging degradation on PSM. The Intensity Critical Dimension Uniformity option (iCDUTM) was firstly developed to provide feed-forward CDU maps for scanners intrafield corrections, from arrayed dense structures on memory masks. Due to layout complexity and differing feature types, CDU monitoring on logic masks used to pose unique challenges. CDU monitoring on logic masks is now available, the latest Delta-Die and Delta-Time options gives all the needed information, as shown in this paper. In this study, iCDU has demonstrated its ability to catch a slight degradation of CD uniformity. In the end, this study shows evidences that standard cleanings used in maskshops cannot recover the mask back to its original CD. Finally, Transmission Electron Microscopy (TEM) was used to confirm the chemical nature of the grown material on sidewalls. TEM cuts provide a comparison between a production mask (aging over many years in production) and the test mask (accelerated aging on a test bench).

SPIE Journal Paper | 27 April 2016

Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond

Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, Vincent Farys, Frederic Huguennet, Ana-Maria Armeanu, Ingo Bork, Michael Chomat, Peter Buck, Isabelle Schanen

JM3, Vol. 15, Issue 02, 021011, (April 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021011

KEYWORDS: Photomasks, Calibration, Optical proximity correction, Critical dimension metrology, Electroluminescence, Wafer-level optics, Semiconducting wafers, Data modeling, 3D modeling, Scanning electron microscopy

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Proceedings Article | 23 October 2015 Paper

Higher order feed-forward control of reticle writing error fingerprints

Richard van Haren, Hakki Ergun Cekli, Jan Beltman, Anne Pastol, Frank Sundermann, Maxime Gatefait

Proceedings Volume 9635, 963507 (2015) https://doi.org/10.1117/12.2197556

KEYWORDS: Metrology, Reticles, Photomasks, Overlay metrology, Scanners, Image registration, Semiconducting wafers, Optical alignment, Data modeling, Pellicles

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The understanding and control of the intra-field overlay budget becomes crucial particularly after the introduction of multi-patterning applications. The intra-field overlay budget is built-up out of many contributors, each with its own characteristic. Some of them are (semi-)static like the reticle writing error (RWE) fingerprint, the scanner lens fingerprint, or the intra-field processing signature. Others are more dynamic. Examples are reticle heating and lens heating due to the absorption of a small portion of the exposure light. Ideally, all overlay contributors that are understood and known could be taken out of the feed-back control loop and send as feed-forward corrections to the scanner. As a consequence, only non-correctable overlay residuals are measured on the wafer.

In the current work, we have studied the possibility to characterize the reticle writing error fingerprint by an off-line position measurement tool and use this information to send feed-forward corrections to the ASML TWINSCAN^TM exposure tool. The current work is an extension of the work we published earlier. To this end, we have selected a reticle pair out of 50 production reticles that are used to manufacture a 28-nm technology device. These two reticles are special in the sense that the delta fingerprint contains a significant higher order RWE signature. While previously only the linear parameters were sent as feed-forward corrections to the ASML TWINSCAN^TM exposure tool, this time we additionally demonstrate the capability to correct for the non-linear terms as well. Since the concept heavily relies on the quality of the off-line mask registration measurements, a state-of-the-art reticle registration tool was chosen. Special care was taken to eliminate any effects of the tool induced shifts that may affect the quality of the measurements. The on-wafer overlay verification measurements were performed on an ASML YieldStar metrology tool as well as on a different vendor tool.

In conclusion, we have extended and proven the concept of using off-line reticle registration measurements to enable higher order feed-forward corrections the ASML TWINSCAN^TM scanner. This capability has been verified by on-wafer overlay measurements. It is demonstrated that the RWE contribution in the overlay budget can be taken out of the feedback control loop and sent as feed-forward corrections instead. This concept can easily be extended when more scanner corrections become available.

Proceedings Article | 23 October 2015 Paper

Accurate mask model implementation in OPC model for 14nm nodes and beyond

Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, Vincent Farys, Frederic Huguennet, Ana-Maria Armeanu, Ingo Bork, Michael Chomat, Peter Buck, Isabelle Schanen

Proceedings Volume 9635, 96350W (2015) https://doi.org/10.1117/12.2203267

KEYWORDS: Photomasks, Calibration, Critical dimension metrology, Semiconducting wafers, Optical proximity correction, Wafer-level optics, Process modeling, Data modeling, Photoresist processing, Neck

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SPIE Journal Paper | 10 April 2015

Patterning critical dimension control for advanced logic nodes

Bertrand Le-Gratiet, Jean De-Caunes, Maxime Gatefait, Auguste Lam, Alain Ostrovsky, Jonathan Planchot, Vincent Farys, Julien Ducoté, Marc Mikolajczak, Vincent Morin, Nicolas Chojnowski, Frank Sundermann, Alice Pelletier, Regis Bouyssou, Cedric Monget, Jean-Damien Chapon, Bastien Orlando, Laurene Babaud, Céline Lapeyre, Emek Yesilada, Anna Szucs, Jean-Christophe Michel, Latifa Desvoivres, Onintza Ros Bengoechea, Pascal Gouraud

JM3, Vol. 14, Issue 02, 021103, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021103

KEYWORDS: Semiconducting wafers, Optical lithography, Critical dimension metrology, Process control, Photomasks, Etching, Logic, Metrology, Lithography, Optical proximity correction

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Proceedings Article | 29 October 2014 Paper

Impact of reticle writing errors on the on-product overlay performance

Richard van Haren, Hakki Ergun Cekli, Xing Lan Liu, Jan Beltman, Anne Pastol, Jean Massin, Emilie Dupre La Tour, Maxime Gatefait, Frank Sundermann

Proceedings Volume 9235, 923522 (2014) https://doi.org/10.1117/12.2069315

KEYWORDS: Reticles, Semiconducting wafers, Scanners, Photomasks, Overlay metrology, Optical alignment, Metals, Image registration, Etching, Metrology

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The on-product overlay specification and Advanced Process Control (APC) are getting extremely challenging particularly after the introduction of multi-patterning applications like Litho-Etch-Litho-Etch (LELE). While the Reticle Writing Error (RWE) contribution could be marginalized for quite some time in the layer-to-layer overlay budget, it will become one of the dominating overlay contributors when the intra-layer overlay budget is considered. While most of the overlay contributors like wafer processing, scanner status, reticle transmission, dose, illumination conditions drop out of the intra-layer overlay budget, this is certainly not the case for reticle to reticle writing differences. In this work, we have studied the impact of the RWE on the on-product overlay performance. We show that the RWE can be characterized by an off-line mask registration tool and the modelled results can be sent as feed-forward corrections to the ASML TWINSCAN^TM. By doing so, the overlay control complexity (e.g. send-ahead wafers, APC settling time) can be reduced significantly. Off-line characterization enables that all reticles virtually become equal after correction (at least to the level of correction capability of the scanner). This means that all higher order RWE contributions (currently up to a third order polynomial) can be removed from the fingerprint. We show that out of 50 production reticles (FEOL, 28-nm technology), 30% can be improved on residual level when non-linear feed-forward corrections are considered as well. The additional benefit of feeding forward linear corrections to the scanner is even higher: it is anticipated that a large portion of the APC variation might find its origin in the RWE contribution. In order to send feed-forward corrections to the scanner, we obviously rely on the quality of the off-line RWE measurements. These measurements are usually provided by a registration tool at the mask shop. To secure the quality, an independent experimental verification test was developed to check if off-line RWE measurements can be used as feed-forward corrections to the scanner. The test has been executed on an ASML NXT: 1950i scanner and was designed such to isolate the reticle writing error contribution. The match between the off-line measurements and the experiment is striking.

Proceedings Article | 17 October 2014 Paper

How holistic process control translates into high mix logic fab APC?

B. Le-Gratiet, M. Gatefait, J. Ducotè, J. Decaunes, A. Lam, B. Beraud, M. Mikolajczak, A. Pelletier, B. Orlando, F. Sundermann, A. Ostrovsky, C. Lapeyre

Proceedings Volume 9231, 92310V (2014) https://doi.org/10.1117/12.2064795

KEYWORDS: Semiconducting wafers, Photomasks, Process control, Scanners, Metrology, Etching, Databases, Logic, Data modeling, Control systems

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Proceedings Article | 28 July 2014 Paper

Accurate mask model for advanced nodes

Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, El Hadji Omar Ndiaye, Kushlendra Mishra, Sankaranarayanan Paninjath, Ingo Bork, Peter Buck, Olivier Toublan, Isabelle Schanen

Proceedings Volume 9256, 925603 (2014) https://doi.org/10.1117/12.2069977

KEYWORDS: Photomasks, Calibration, Data modeling, Optical proximity correction, Etching, Error analysis, Printing, Electron beam lithography, Scanning electron microscopy, Semiconducting wafers

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Proceedings Article | 9 September 2013 Paper

Inline detection of Chrome degradation on binary 193nm photomasks

Félix Dufaye, Astrid Sippel, Mark Wylie, Edgardo García-Berríos, Charles Crawford, Carl Hess, Luca Sartelli, Carlo Pogliani, Hiroyuki Miyashita, Stuart Gough, Frank Sundermann, Christophe Brochard

Proceedings Volume 8880, 88800N (2013) https://doi.org/10.1117/12.2029470

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Binary data, Logic, Pellicles, Lithography, Metals

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193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300mm wafers exposed and the cleaning brought it back almost to its original state after manufacture. Wafer CD, photomask CD and iCDU results can be compared, before and after a standard mask shop cleaning. Measurement points have be chosen in logic areas and SRAM areas, so that their respective behaviours can be studied separately. Transmitted maps before and after cleaning were analysed in terms of CD shift and CDU degradation. The delta map shows a nice correlation with photomask CD shift. iCDU demonstrated the capability to detect a reliable CD range degradation of 5nm on photomask by a comparison between a reference inspection and the current inspection. Die to die inspection mode provides also valuable data, highlighting the degraded chrome sidewalls, more in the photomask centre than on the edges. Ultimately, these results would enable to trigger the preventive cleanings rather than on predefined thresholds. The expected gains for wafer fabs are cost savings (adapted cleanings frequency), increased photomask availability for production, longer photomask lifetime, no additional SEM time neither for photomask nor on wafer.

Proceedings Article | 30 June 2012 Paper

A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

Patrick Schiavone, Luc Martin, Clyde Browning, Vincent Farys, Frank Sundermann, Shogo Narukawa, Tadahiko Takikawa, Naoya Hayashi

Proceedings Volume 8441, 84411F (2012) https://doi.org/10.1117/12.981609

KEYWORDS: Photomasks, Calibration, Modulation, Manufacturing, Data modeling, Ions, Extreme ultraviolet, Lithography, Scattering, Electroluminescence

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Proceedings Article | 5 April 2012 Paper

Integration and automation of DoseMapper in a logic fab APC system: application for 45/40/28nm node

Bertrand Le Gratiet, Christophe Salagnon, Jean de Caunes, Marc Mikolajczak, Vincent Morin, Nicolas Chojnowski, Frank Sundermann, Jean Massin, Alice Pelletier, Joel Metz, Yoann Blancquaert, Regis Bouyssou, Arthur Pelissier, Olivier Belmont, Anne Strapazzon, Anna Phillips, Thierry Devoivre, Emilie Bernard, Estelle Batail, Lionel Thevenon, Benedicte Bry, Fabrice Bernard-Granger, Ahmed Oumina, Marie-Pierre Baron, Didier Gueze

Proceedings Volume 8324, 83241Y (2012) https://doi.org/10.1117/12.911882

KEYWORDS: Etching, Photomasks, Logic, Databases, Control systems, Scanners, Metrology, Semiconducting wafers, Lithography, Process control

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Proceedings Article | 13 March 2012 Paper

Full field lithographical verification using scanner and mask intrafield fingerprint

J. Planchot, L. Depre, E. Yesilada, F. Robert, F. Sundermann, H. Y. Liu, L. Cai, F. Chen

Proceedings Volume 8326, 832617 (2012) https://doi.org/10.1117/12.916151

KEYWORDS: Scanners, Photomasks, Semiconducting wafers, Scanning electron microscopy, Lithography, Critical dimension metrology, Fiber optic illuminators, Metals, Optical proximity correction, Bridges

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Proceedings Article | 2 April 2010 Paper

Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm

Bertrand Le Gratiet, Frank Sundermann, Jean Massin, Marianne Decaux, Nicolas Thivolle, Fabrice Baron, Alain Ostrovsky, Cedric Monget, Jean Damien Chapon, Yoann Blancquaert, Karen Dabertrand, Lionel Thevenon, Benedicte Bry, Nicolas Cluet, Bertrand Borot, Raphael Bingert, Thierry Devoivre, Pascal Gourard, Laurène Babaud, Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen

Proceedings Volume 7638, 76380A (2010) https://doi.org/10.1117/12.845987

KEYWORDS: Photomasks, Critical dimension metrology, Metrology, Etching, Scanners, Semiconducting wafers, Airborne remote sensing, Logic, Optical lithography, Process control

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Proceedings Article | 30 March 2010 Paper

Grayscale lithography process study applied to zero-gap microlenses for sub-2μm CMOS image sensors

S. Audran, J. Vaillant, V. Farys, F. Hirigoyen, E. Huss, B. Mortini, C. Cowache, L. Berthier, E. Mortini, J. Fantuz, O. Arnaud, L. Depoyan, F. Sundermann, C. Baron, J.-P. Reynard

Proceedings Volume 7639, 763910 (2010) https://doi.org/10.1117/12.846507

KEYWORDS: Microlens, Photomasks, Calibration, Spherical lenses, Atomic force microscopy, Grayscale lithography, Image processing, Photoresist processing, Photoresist materials, Diffusion

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Proceedings Article | 23 September 2009 Paper

Back-glass cleaning: reducing repelliclization costs by focused action

Francesca Perissinotti, Luca Sartelli, Hiroyuki Miyashita, Ming-Chien Chiu, Yu-Chang Liu, Hung-Chieh Chung, Frank Sundermann, Stuart Gough, Sonia Tourniol, Felix Dufaye

Proceedings Volume 7488, 74882M (2009) https://doi.org/10.1117/12.830718

KEYWORDS: Photomasks, Pellicles, Inspection, Contamination, Reticles, Ions, Glasses, Air contamination, Particles, Chromium

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Proceedings Article | 27 May 2009 Paper

Improving yield and cycle time at the inspection process by means of a new defects disposition technique

Ernesto Villa, Luca Sartelli, Hiroyuki Miyashita, Frank Sundermann, Stuart Gough, Felix Dufaye, Astrid Sippel

Proceedings Volume 7470, 74700T (2009) https://doi.org/10.1117/12.835191

KEYWORDS: Iron, Inspection, Fourier transforms, Photomasks, Opacity, Contamination, Error analysis, Semiconducting wafers, Image processing, Yield improvement

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Proceedings Article | 24 March 2009 Paper

Intrafield process control for 45 nm CMOS logic patterning

Bertrand Le Gratiet, Jean Massin, Alain Ostrovski, Cedric Monget, Marianne Decaux, Nicolas Thivolle, Romuald Faure, Fabrice Baron, Jean-Damien Chapon, Karen Dabertrand, Frank Sundermann, Pascal Gouraud, Laurène Babaud, Lionel Thevenon, Nicolas Cluet, Boris VandeWalle

Proceedings Volume 7272, 72722P (2009) https://doi.org/10.1117/12.812571

KEYWORDS: Reticles, Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Metrology, Optical lithography, Process control, Scatterometry, Logic

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Proceedings Article | 19 May 2008 Paper

Model-based mask verification on critical 45nm logic masks

F. Sundermann, F. Foussadier, T. Takigawa, J. Wiley, A. Vacca, L. Depre, G. Chen, S. Bai, J.-S. Wang, R. Howell, V. Arnoux, K. Hayano, S. Narukawa, S. Kawashima, H. Mohri, N. Hayashi, H. Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J. L. Di-Maria, V. Farys, B. Vandewalle, L. Perraud, J. C. Le Denmat, A. Villaret, C. Gardin, E. Yesilada, M. Saied

Proceedings Volume 7028, 70280U (2008) https://doi.org/10.1117/12.793037

KEYWORDS: Photomasks, Semiconducting wafers, Bridges, Scanning electron microscopy, Critical dimension metrology, Process modeling, Optical proximity correction, Reticles, Model-based design, Logic

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Proceedings Article | 22 March 2008 Paper

Process control for 45 nm CMOS logic gate patterning

Bertrand Le Gratiet, Pascal Gouraud, Enrique Aparicio, Laurene Babaud, Karen Dabertrand, Mathieu Touchet, Stephanie Kremer, Catherine Chaton, Franck Foussadier, Frank Sundermann, Jean Massin, Jean-Damien Chapon, Maxime Gatefait, Blandine Minghetti, Jean de-Caunes, Daniel Boutin

Proceedings Volume 6922, 69220Z (2008) https://doi.org/10.1117/12.776889

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Optical lithography, Scatterometry, Reticles, Scanners, Photomasks, Process control, Immersion lithography

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Proceedings Article | 12 March 2008 Paper

Study of SRAF placement for contact at 45 nm and 32 nm node

V. Farys, F. Robert, C. Martinelli, Y. Trouiller, F. Sundermann, C. Gardin, J. Planchot, G. Kerrien, F. Vautrin, M. Saied, E. Yesilada, F. Foussadier, A. Villaret, L. Perraud, B. Vandewalle, J. C. Le Denmat, M. K. Top

Proceedings Volume 6924, 69242Z (2008) https://doi.org/10.1117/12.774091

KEYWORDS: SRAF, Optical proximity correction, Lithography, Eye, Photomasks, Immersion lithography, Manufacturing, Logic, Switching, Printing

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Proceedings Article | 16 November 2007 Paper

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Mazen Saied, Franck Foussadier, Jérôme Belledent, Yorick Trouiller, Isabelle Schanen, Emek Yesilada, Christian Gardin, Jean Christophe Urbani, Frank Sundermann, Frédéric Robert, Christophe Couderc, Florent Vautrin, Laurent LeCam, Gurwan Kerrien, Jonathan Planchot, Catherine Martinelli, Bill Wilkinson, Yves Rody, Amandine Borjon, Nicolo Morgana, Jean-Luc Di-Maria, Vincent Farys

Proceedings Volume 6730, 673050 (2007) https://doi.org/10.1117/12.752613

KEYWORDS: Photomasks, Optical proximity correction, 3D modeling, Semiconducting wafers, Diffraction, Scattering, Near field, Lithographic illumination, Systems modeling, Near field optics

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Proceedings Article | 1 November 2007 Paper

Model-based mask verification

Frank Foussadier, Frank Sundermann, Anthony Vacca, Jim Wiley, George Chen, Tadahiro Takigawa, Katsuya Hayano, Syougo Narukawa, Satoshi Kawashima, Hiroshi Mohri, Naoya Hayashi, Hiroyuki Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J.L. Di-Maria, Vincent Farys

Proceedings Volume 6730, 673051 (2007) https://doi.org/10.1117/12.752609

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Semiconducting wafers, Process modeling, Critical dimension metrology, Lithography, Model-based design, Wafer-level optics, Scanning electron microscopy

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Proceedings Article | 14 May 2007 Paper

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Christophe Urbani, Jean-Damien Chapon, Jérôme Belledent, Amandine Borjon, Christophe Couderc, Jean-Luc Di-Maria, Vincent Farys, Franck Foussadier, Christian Gardin, Gurwan Kerrien, Laurent LeCam, Catherine Martinelli, Patrick Montgomery, Nicolo Morgana, Jonathan Planchot, Frédéric Robert, Yves Rody, Mazen Saied, Frank Sundermann, Yorick Trouiller, Florent Vautrin, Bill Wilkinson, Emek Yesilada

Proceedings Volume 6607, 66071C (2007) https://doi.org/10.1117/12.728960

KEYWORDS: SRAF, Optical proximity correction, Printing, Optical lithography, Silicon, Photomasks, Semiconducting wafers, Inspection, Optical simulations, Lithography

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Proceedings Article | 3 May 2007 Paper

Investigation of hyper-NA scanner emulation for photomask CDU performance

Eric Poortinga, Thomas Scheruebl, Will Conley, Frank Sundermann

Proceedings Volume 6533, 653307 (2007) https://doi.org/10.1117/12.736325

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Metrology, Lithography, Data acquisition, Manufacturing, Photoresist processing, Image acquisition

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As the semiconductor industry moves toward immersion lithography using numerical apertures above 1.0 the quality of the photomask becomes even more crucial. Photomask specifications are driven by the critical dimension (CD) metrology within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately, tolerances of device electrical properties drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process, and photomask quality. Tightening of photomask specifications is one mechanism for meeting the wafer CD targets. The challenge lies in determining how photomask level metrology results influence wafer level imaging performance. Can it be inferred that photomask level CD performance is the direct contributor to wafer level CD performance? With respect to phase shift masks, criteria such as phase and transmission control are generally tightened with each technology node. Are there other photomask relevant influences that effect wafer CD performance? A comprehensive study is presented supporting the use of scanner emulation based photomask CD metrology to predict wafer level within chip CD uniformity (CDU). Using scanner emulation with the photomask can provide more accurate wafer level prediction because it inherently includes all contributors to image formation related to the 3D topography such as the physical CD, phase, transmission, sidewall angle, surface roughness, and other material properties. Emulated images from different photomask types were captured to provide CD values across chip. Emulated scanner image measurements were completed using an AIMS^TM45-193i with its hyper-NA, through-pellicle data acquisition capability including the Global CDU Map^TM software option for AIMS^TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CDU data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using scanner emulation based photomask CD metrology.

Proceedings Article | 3 May 2007 Paper

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani, Christophe Couderc, Jérôme Belledent, Amandine Borjon, Franck Foussadier, Christian Gardin, Laurent LeCam, Yves Rody, Mazen Saied, Emek Yesilada, Catherine Martinelli, Bill Wilkinson, Florent Vautrin, Nicolo Morgana, Frederic Robert, Patrick Montgomery, Gurwan Kerrien, Jonathan Planchot, Vincent Farys, Jean-Luc Di Maria

Proceedings Volume 6533, 65330E (2007) https://doi.org/10.1117/12.736927

KEYWORDS: Optical proximity correction, Reticles, Metals, Photoresist processing, Semiconducting wafers, Critical dimension metrology, Metrology, Manufacturing, Cadmium, Semiconductors

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Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linearity, local CD errors and registration errors. The second step is to have dedicated OPC (Optical Proximity Correction) structures from the wafer fab. These dedicated OPC structures will be measured by the maskshop to get a reticle CD metrology trend line. With this trend line, we can: - ensure the stability at reticle level of the maskshop processes - put in place a matching procedure to guarantee the same OPC signature at reticle level in case of any internal maskshop process change or new maskshop evaluation. Changes that require qualification could be process changes for capacity reasons, like introducing a new writer or a new manufacturing line, or for capability reasons, like a new process (new developer tool for example) introduction. Most advanced levels will have dedicated OPC structures. Also dedicated maskshop processes will be monitored with these specific OPC structures. In this paper, we will follow in detail the different reticle CD measurements of dedicated OPC structures for the three advanced logic levels of the 65nm node: poly level, contact level and metal level. The related maskshop's processes are - for poly: eaPSM 193nm with a nega CAR (Chemically Amplified Resist) process for Clear Field L/S (Lines & Space) reticles - for contact: eaPSM 193nm with a posi CAR process for Dark Field Holes reticles - for metal1: eaPSM 193nm with a posi CAR process for Dark Field L/S reticles. For all these structures, CD linearity, CD through pitch, length effects, and pattern density effects will be monitored. To average the metrology errors, the structures are placed twice on the reticle. The first part of this paper will describe the different OPC structures. These OPC structures are close to the DRM (Design Rule Manual) of the dedicated levels to be monitored. The second part of the paper will describe the matching procedure to ensure the same OPC signature at reticle level. We will give an example of an internal maskshop matching exercise, which could be needed when we switched from an already qualified 50 KeV tool to a new 50 KeV tool. The second example is the same matching exercise of our 65nm OPC structures, but with two different maskshops. The last part of the paper will show first results on dedicated OPC structures for the 45nm node.

Proceedings Article | 3 May 2007 Paper

Reticle haze: an industrial approach

Stuart Gough, Xavier Gérard, Pascal Bichebois, Agnès Roche, Frank Sundermann, Véronique Guyader, Yann Bièron, Jean Galvier, Serge Nicoleau

Proceedings Volume 6533, 65330X (2007) https://doi.org/10.1117/12.736977

KEYWORDS: Reticles, Air contamination, Semiconducting wafers, Pellicles, Crystals, Photomasks, Contamination, Environmental monitoring, Inspection, Ions

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Crystal growth on advanced reticles is currently a world wide industrial problem in high end semiconductor production environment, crystals are mainly found on reticles that use high energy photons at 193nm wavelength. The most common crystals to be found on masks are ammonium sulphate, a combination of sulphate, from maskshop residues after clean, pellicle materials and storage conditions and amines from clean room, tool and storage environments. High energy photons act as a catalyst to form crystals on both the pattern side as well as the backglass surface. After a number of exposures crystals can grow in size and eventually become printable. In order to detect HAZE before critical dimensions have been reached suitable detection methods need to be implemented to ensure image integrity. These detection methods are different and complementary depending on the surface to be inspected. Once crystals have started growing, the only method to regain mask quality is to clean the mask at the manufacturers site. This brings with it several undesirable situations, not only is the mask unavailable for production but the cleaning of a mask leads to a potential risk of damaging the mask especially for sub resolution patterns such as scatter bars and phase and transmission changes for eaPSM (Embedded Attenuated Phase Shift Mask) masks. This paper will discuss the initial haze issues seen in a 300mm wafer fab and actions put in place to address the problem. An explanation of results gained from haze reduction actions implemented in a wafer fab will be given. Haze seen by reticle inspection and surface analysis tools can be characterised by typical contamination patterns. These signatures appear after a certain number of wafers exposed depending on several reticle variables such as transmission, Binary, eaPSM, Pellicle. Details will be given of how reticles are managed to ensure minimum impact to a production environment with an appropriate reticle control plan. AMC (Airborne Molecular Contamination) in wafer fab and equipment environment is a key factor for crystal growth. The type of filtration installed to reduce AMC and method of atmospheric monitoring for critical areas will be explained. Choice of reticle storage conditions and materials used for transport during the life of the reticle will be included. Improvements in maskshop cleaning processes, reticle materials and environmental control have lead to extended mask lifetime in the wafer fab of more than 20 times. The fundamental differences and relative monitoring will be described and gain from implemented actions will be presented Once crystals have started growing, the only method to regain mask quality is to clean the mask at the manufacturers site. This brings with it several undesirable situations, not only is the mask unavailable for production but the cleaning of a mask leads to a potential risk of damaging the mask especially for sub resolution patterns such as scatter bars and phase and transmission changes for eaPSM (Embedded Attenuated Phase Shift Mask) masks. This paper will discuss the initial haze issues seen in a 300mm wafer fab and actions put in place to address the problem. An explanation of results gained from haze reduction actions implemented in a wafer fab will be given. Haze seen by reticle inspection and surface analysis tools can be characterised by typical contamination patterns. These signatures appear after a certain number of wafers exposed depending on several reticle variables such as transmission, Binary, eaPSM, Pellicle. Details will be given of how reticles are managed to ensure minimum impact to a production environment with an appropriate reticle control plan. AMC (Airborne Molecular Contamination) in wafer fab and equipment environment is a key factor for crystal growth. The type of filtration installed to reduce AMC and method of atmospheric monitoring for critical areas will be explained. Choice of reticle storage conditions and materials used for transport during the life of the reticle will be included. Improvements in maskshop cleaning processes, reticle materials and environmental control have lead to extended mask lifetime in the wafer fab of more than 20 times. The fundamental differences and relative monitoring will be described and gain from implemented actions will be presented

Proceedings Article | 27 March 2007 Paper

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

M. Saied, F. Foussadier, J. Belledent, Y. Trouiller, I. Schanen, C. Gardin, J. C. Urbani, P. K. Montgomery, F. Sundermann, F. Robert, C. Couderc, F. Vautrin, G. Kerrien, J. Planchot, E. Yesilada, C. Martinelli, B. Wilkinson, A. Borjon, L. Le-Cam, J. L. Di-Maria, Y. Rody, N. Morgana, Vincent Farys

Proceedings Volume 6520, 65204Q (2007) https://doi.org/10.1117/12.715120

KEYWORDS: 3D modeling, Photomasks, Optical proximity correction, Polarization, Process modeling, Lithium, Optical lithography, Information technology, Semiconducting wafers, Semiconductors

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Proceedings Article | 27 March 2007 Paper

32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner

Yorick Trouiller, Vincent Farys, Amandine Borjon, Jérôme Belledent, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Jonathan Planchot, Will Conley, Pierre-Jerome Goirand, Scott Warrick, Frédéric Robert, Gurwan Kerrien, Florent Vautrin, Bill Wilkinson, Mazen Saied, Emic Yesilada, Patrick Montgomery, Laurent Le Cam, Catherine Martinelli

Proceedings Volume 6520, 65201D (2007) https://doi.org/10.1117/12.714116

KEYWORDS: Optical lithography, Polarization, Transistors, Double patterning technology, Resolution enhancement technologies, Printing, System on a chip, Logic, Scanners, Optical proximity correction

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Proceedings Article | 20 October 2006 Paper

Sensitivity of a variable threshold model toward process and modeling parameters

Mazen Saied, Franck Foussadier, Yorick Trouiller, Jérôme Belledent, Kevin Lucas, Isabelle Schanen, Amandine Borjon, Christophe Couderc, Christian Gardin, Laurent LeCam, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Emek Yesilada

Proceedings Volume 6349, 634919 (2006) https://doi.org/10.1117/12.686666

KEYWORDS: Calibration, Process modeling, Data modeling, Optical proximity correction, Mathematical modeling, Photoresist processing, Model-based design, Photomasks, Image processing, Image quality

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Proceedings Article | 21 March 2006 Paper

Process window OPC verification: dry versus immersion lithography for the 65nm node

Amandine Borjon, Jerome Belledent, Yorick Trouiller, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Frank Foussadier, Patrick Schiavone

Proceedings Volume 6154, 61544D (2006) https://doi.org/10.1117/12.657056

KEYWORDS: Immersion lithography, Lithography, Calibration, Optical proximity correction, Printing, Optical transfer functions, Data modeling, Process modeling, Convolution, Optical lithography

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Proceedings Article | 5 November 2005 Paper

Through-process window resist modelling strategies for the 65 nm node

Amandine Borjon, Jerôme Belledent, Yorick Trouiller, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Christian Gardin, Franck Foussadier, Patrick Schiavone

Proceedings Volume 5992, 599219 (2005) https://doi.org/10.1117/12.632096

KEYWORDS: Data modeling, Calibration, Statistical modeling, Printing, Critical dimension metrology, Electroluminescence, Convolution, Modeling, Mathematical modeling, Computer simulations

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Proceedings Article | 28 June 2005 Paper

Correction of long-range effects applied to the 65-nm node

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, Jean-Christophe Urbani

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617433

KEYWORDS: Critical dimension metrology, Etching, Photomasks, Convolution, Optical proximity correction, Electrons, Point spread functions, Optical lithography, Scattering, Light scattering

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Proceedings Article | 28 June 2005 Paper

Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy

Christophe Couderc, Jerome Belledent, Amandine Borjon, Yorick Trouiller, Frank Sundermann, Kevin Lucas, Jean-Christophe Urbani, Franck Foussadier, Yves Rody, Kyle Patterson, Stanislas Baron

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617412

KEYWORDS: Optical proximity correction, Resolution enhancement technologies, Multilayers, Optical lithography, Photomasks, Optics manufacturing, Semiconducting wafers, Metals, Manufacturing, Lithography

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Proceedings Article | 12 May 2005 Paper

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Amandine Borjon, Jerome Belledent, Shumay Shang, Olivier Toublan, Corinne Miramond, Kyle Patterson, Kevin Lucas, Christophe Couderc, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yorick Trouiller, Patrick Schiavone

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600471

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Printing, Optical lithography, Scanning electron microscopy, Process modeling, 3D modeling, Lithography, Photomasks

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It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule Checking (MRC) and Optical Rule Checking (ORC) have become mandatory tools for ensuring that OPC delivers robust patterning. However the first method relies on geometrical checks and the second one is based on a model built at best process conditions. Thus those techniques do not have the ability to address all potential printing errors throughout the process window (PW). To address this issue, a technique known as Critical Failure ORC (CFORC) was introduced that uses optical parameters from aerial image simulations. In CFORC, a numerical model is used to correlate these optical parameters with experimental data taken throughout the process window to predict printing errors. This method has proven its efficiency for detecting potential printing issues through the entire process window [1]. However this analytical method is based on optical parameters extracted via an optical model built at single process conditions. It is reasonable to expect that a verification method involving optical models built from several points throughout PW would provide more accurate predictions of printing errors for complex features. To verify this approach, compact optical models similar to those used for standard OPC were built and calibrated with experimental data measured at the PW limits. This model is then applied to various test patterns to predict potential printing errors. In this paper, a comparison between these two approaches is presented for the poly layer at 65 nm node patterning. Examples of specific failure predictions obtained separately with the two techniques are compared with experimental results. The details of implementing these two techniques on full product layouts are also included in this study.

Proceedings Article | 5 May 2005 Paper

Improving model-based OPC performance for the 65-nm node through calibration set optimization

Kyle Patterson, Yorick Trouiller, Kevin Lucas, Jerome Belledent, Amandine Borjon, Yves Rody, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601166

KEYWORDS: Calibration, Data modeling, Optical proximity correction, Statistical modeling, Performance modeling, Model-based design, Photoresist materials, Printing, Coastal modeling, Optimization (mathematics)

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Proceedings Article | 5 May 2005 Paper

Investigation of model-based physical design restrictions

Kevin Lucas, Stanislas Baron, Jerome Belledent, Robert Boone, Amandine Borjon, Christophe Couderc, Kyle Patterson, Lionel Riviere-Cazaux, Yves Rody, Frank Sundermann, Olivier Toublan, Yorick Trouiller, Jean-Christophe Urbani, Karl Wimmer

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601105

KEYWORDS: Model-based design, Optical proximity correction, Optical lithography, Data modeling, Lithography, Systems modeling, Semiconductors, Resolution enhancement technologies, Reticles, Semiconducting wafers

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Proceedings Article | 5 May 2005 Paper

65nm OPC and design optimization by using simple electrical transistor simulation

Yorick Trouiller, Thierry Devoivre, Jerome Belledent, Franck Foussadier, Amandine Borjon, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Jean-Damien Chapon, Franck Arnaud, Jorge Entradas

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.600887

KEYWORDS: Transistors, Ions, Optical proximity correction, Lithography, Optical lithography, Lithium, Logic, Photomasks, Lithographic illumination, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Closing the defect printability loop: optimizing defect specifications for an established lithographic process

Kyle Patterson, Clare Wakefield, Pierre Sixt, Frank Sundermann, Yorick Trouiller, Jerome Belledent, Christophe Couderc, Yves Rody, Kevin Lucas

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569257

KEYWORDS: Semiconducting wafers, Metrology, Reticles, Lithography, Feature extraction, Optical proximity correction, Photomasks, Photoresist processing, Calibration, Array processing

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Proceedings Article | 28 May 2004 Paper

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Shumay Shang, Yorick Trouiller, Corinne Miramond, Kyle Patterson, Olivier Toublan, Christophe Couderc, Frank Sundermann, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537190

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Printing, Visualization, Failure analysis, Bridges, Scattering, Image processing, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

MEV as a new constraint for lithographers in the sub-100-nm regime

Yorick Trouiller, Sergei Postnikov, Kevin Lucas, Frank Sundermann, Kyle Patterson, Jerome Belledent, Christophe Couderc, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.556617

KEYWORDS: Electroluminescence, Critical dimension metrology, Photomasks, Semiconducting wafers, Lithography, Cadmium, Logic devices, Process control, Sodium, SRAF

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Proceedings Article | 30 July 2002 Paper

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Corinne Miramond, Yves Rody, Frank Sundermann, J. D. Chapon, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474597

KEYWORDS: Photomasks, Binary data, Electroluminescence, Resolution enhancement technologies, Neodymium, Visualization, Scanners, Critical dimension metrology, Manufacturing, Printing

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Proceedings Article | 2 June 2000 Paper

Printability of reticle repairs in a 248-nm DUV production environment

Xavier Gerard, Laurent Deloraine, Frank Sundermann, Eric Rouchouze

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386487

KEYWORDS: Reticles, Semiconducting wafers, Inspection, Critical dimension metrology, Photomasks, Deep ultraviolet, Chlorine, Lithium, Databases, Semiconductor manufacturing

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