KEYWORDS: Tandem solar cells, Solar cells, Silicon, Multijunction solar cells, Germanium, Gallium arsenide, Electron microscopy, Deposition processes, Crystals, Copper indium gallium selenide
We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CuIn0.75Ga0.25S2 (pure-sulfide CIGSu) top cell, using GaP intermediate layer. Our purpose is to grow CIGSu films under epitaxial conditions on GaP/Si(001) to improve the top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGSu/Si tandem cells can emerge as cost competitive for the next generation of PV modules. Record efficiency on standard AZO/ZnMgO/CdS/CIGSu/Mo/Glass solar cell and epitaxy of CIGSsu on GaP/Si are demonstrated.
Olivier Durand, Eugène Bertin, Antoine Létoublon, Charles Cornet, Nicolas Barreau, Eric Gautron, Alexandre Crossay, Amelle Rebai, Daniel lincot, Jackson Lontchi
We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CIGS top cell, using GaP intermediate layer. Our purpose is to grow CIGS films under epitaxial conditions on GaP to improve the top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGS-Si tandem cells can emerge as cost competitive for the next generation of PV modules. Epitaxy of CIGS (CIGSe or CIGSu) on GaP/Si platform is demonstrated and preliminary results on AZO/ZnMgO/CdS/CIGS cells on Mo/Glass and GaP/Si are reported.
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