The dosimeters based on RADFETs are high actual for utilizing in space where the low dose rates irradiation prevails. The paper presents new experimental data on low-intensity irradiation of p-MNOS based RADFET. The obtained results were compared with the results of irradiation at high dose rates. The effect of ELDRS and the simultaneous annealing effect on different types of samples were discussed. The sensitivity of both types changed similarly at the range 1-100 rad(Si)/s. However, for dose rates less than 1 rad(Si)/s, the effect of the simultaneous annealing on change in the threshold voltage shift in time was clearly noticed only for samples with 500 nm oxide and absented for samples with 150 nm oxide.
We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.
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