Prof. Donghai Wu Profile

Prof. Donghai Wu

Professor at Institute of Semiconductors

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 11 October 2024 Paper

Growth and fabrication of GaAs-based InAs/AlSb resonant tunneling diode

Qiuyao Pang, Donghai Wu, Jianxing Xu, Xiangbin Su, Yingqiang Xu, Guowei Wang, Haiqiao Ni, Zhichuan Niu

Proceedings Volume 13287, 1328713 (2024) https://doi.org/10.1117/12.3038956

KEYWORDS: Indium arsenide, Gallium arsenide, Diodes, Wet etching, Electrical conductivity, Superlattices, Terahertz radiation, Fabrication, Atomic force microscopy, Oscillators

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Proceedings Article | 16 December 2022 Poster + Paper

2μm-compatible avalanche photodetector using Sb-based superlattice

Wenguang Zhou, Junkai Jiang, Nong Li, Faran Chang, Guowei Wang, Yingqiang Xu, Donghai Wu, Dongwei Jiang, Hongyue Hao, Weiqiang Chen, Suning Cui, Xueyue Xu, Zhichuan Niu

Proceedings Volume 12324, 1232413 (2022) https://doi.org/10.1117/12.2644100

KEYWORDS: Avalanche photodetectors, Superlattices, Aluminum, Ionization, Absorption, Sensors, Laser sintering, Electrons, Signal detection, Satellites

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Proceedings Article | 31 January 2020 Presentation + Paper

High speed short wavelength infrared heterojunction phototransistors based on type II superlattices

Jiakai Li, Arash Dehzangi, Donghai Wu, Manijeh Razeghi

Proceedings Volume 11288, 1128813 (2020) https://doi.org/10.1117/12.2548611

KEYWORDS: Short wave infrared radiation, Phototransistors, Superlattices, Heterojunctions, Photodetectors, Etching, Infrared radiation, Gallium antimonide

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Proceedings Article | 6 September 2019 Open Access

Room temperature continuous wave THz frequency comb based on quantum cascade lasers

M. Razeghi, Q. Y. Lu, F. H. Wang, D. H. Wu, S. Slivken

Proceedings Volume 11124, 1112407 (2019) https://doi.org/10.1117/12.2533903

KEYWORDS: Terahertz radiation, Quantum cascade lasers, Mid-IR, Frequency combs, Heterodyning, Continuous wave operation, Spectroscopy, Lasers, FT-IR spectroscopy, Hole burning spectroscopy

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Proceedings Article | 7 May 2019 Paper

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Manijeh Razeghi, Arash Dehzangi, Donghai Wu, Ryan McClintock, Yiyun Zhang, Quentin Durlin, Jiakai Li, Fanfei Meng

Proceedings Volume 11002, 110020G (2019) https://doi.org/10.1117/12.2521173

KEYWORDS: Photodetectors, Antimony, Superlattices, Quantum efficiency, Indium arsenide, Imaging systems, Infrared imaging, Absorption

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Proceedings Article | 14 September 2018 Paper

Review of high power frequency comb sources based on InP: from MIR to THz at CQD

Manijeh Razeghi, Quanyong Lu, Donghai Wu, Steven Slivken

Proceedings Volume 10756, 107560I (2018) https://doi.org/10.1117/12.2326358

KEYWORDS: Quantum cascade lasers, Frequency combs, Dispersion, Mid-IR, Mirrors, Waveguides, Terahertz radiation, Spectroscopy, Continuous wave operation, Sensors

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Proceedings Article | 26 January 2018 Presentation + Paper

Broadband monolithically tunable quantum cascade lasers

Wenjia Zhou, Ryan McClintock, Donghai Wu, Steven Slivken, Manijeh Razeghi

Proceedings Volume 10540, 105400A (2018) https://doi.org/10.1117/12.2297479

KEYWORDS: Quantum cascade lasers, Tunable lasers, Waveguides, Laser systems engineering, Spectroscopy, Semiconducting wafers, Mid-IR, FT-IR spectroscopy, Pulsed laser operation, Methane

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SPIE Journal Paper | 5 October 2017

Progress in monolithic, broadband, widely tunable midinfrared quantum cascade lasers

Manijeh Razeghi, Wenjia Zhou, Ryan McClintock, Donghai Wu, Steven Slivken

OE, Vol. 57, Issue 01, 011018, (October 2017) https://doi.org/10.1117/12.10.1117/1.OE.57.1.011018

KEYWORDS: Quantum cascade lasers, Tunable lasers, Semiconducting wafers, FT-IR spectroscopy, Pulsed laser operation, Spectroscopy, Laser systems engineering, Composites, Methane, Waveguides

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Proceedings Article | 3 February 2009 Paper

Metamorphic InGaAs telecom lasers on GaAs

I. Tångring, Y. X. Song, D. H. Wu, Z. C. Niu, S. M. Wang, A. Larsson

Proceedings Volume 7230, 723003 (2009) https://doi.org/10.1117/12.808787

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Quantum wells, Gallium, Doping, Silicon, Surface roughness, Aluminum, Molecular beam epitaxy, Epitaxy

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Showing 5 of 9 publications

Conference Committee Involvement (3)

Quantum Sensing and Nano Electronics and Photonics XXI

26 January 2025 | San Francisco, California, United States

Quantum Sensing and Nano Electronics and Photonics XX

28 January 2024 | San Francisco, California, United States

Quantum Sensing and Nano Electronics and Photonics XIX

29 January 2023 | San Francisco, California, United States

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