In the research, we describe a method that can well control the mean-to-target (MTT) difference in the critical dimension (CD) of the reticle. It is called the multi-etched (or re-etched) process, re-etched process will separate the conventional dry-etched process into two steps. The major purpose of the first etching is takeout the absorber layer and get preliminary CD results (line/width are less than but close to the design target), and the function of the second etched process (re-etched) can precisely control CD results to match design target. On the re-etched process, not only MTT difference but also CD uniformity will be improved. Therefore, the re-etched process might be a method to well control CD performance (i.e., MTT and uniformity) of the reticle for mask shop application.
Deep-ultraviolet (DUV) laser writer ALTA4700DP upgraded from ALTA4700. The new design laser mask pattern
generator (LMPGs), advance electronic design automation (EDA), and multi-core CPU server (up to hundreds of core)
are all constructed on the machine. The effective of machine (exposure time) and CD performance (uniformity, thr-pitch and corner rounding) of products are obvious reduced and improved, respectively.
In research, not only the CD performance of mask was obtained by CD-SEM but also the CD performance of wafer
was defined by AIMS simulation. The effect of corner rounding was proved by average CD and exposure intensity of
contact structure by both CD-SEM measurement and AIMS simulation.
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