Dr. Christine A. Wang Profile

Dr. Christine A. Wang

Member of Technical Staff at MIT Lincoln Lab

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Author

Publications (9)

Proceedings Article | 28 April 2017 Presentation

Continuous-wave operation of MOVPE grown bi-functional quantum cascade laser/detectors (Conference Presentation)

Benedikt Schwarz, Christine Wang, Tobias Mansuripur, Michael Connors, Leo Missaggia, Daniel McNulty, Gottfried Strasser, Federico Capasso

Proceedings Volume 10111, 101112E (2017) https://doi.org/10.1117/12.2250123

KEYWORDS: Modeling, Aluminum nitride, Quantum cascade lasers, Sensors, Continuous wave operation, Laser applications, Mid-IR, Integrated photonics, Photodetectors, Waveguides

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Proceedings Article | 22 April 2016 Paper

Thermal management of quantum cascade lasers in an individually addressable monolithic array architecture

Leo Missaggia, Christine Wang, Michael Connors, Brian Saar, Antonio Sanchez-Rubio, Kevin Creedon, George Turner, William Herzog

Proceedings Volume 9730, 973008 (2016) https://doi.org/10.1117/12.2208923

KEYWORDS: Quantum cascade lasers, High power lasers, Amplifiers, Mid-IR, Long wavelength infrared, Infrared radiation, Laser applications, Electro optical modeling, Thermal modeling, Aluminum nitride, Packaging, Optical components, Optical amplifiers, Electro optics

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Proceedings Article | 2 May 1997 Paper

GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy

Christine Wang, Hong Choi

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273802

KEYWORDS: Semiconductor lasers, Cladding, Vapor phase epitaxy, Quantum wells, Laser damage threshold, Gallium indium arsenide antimonide phosphide, Gallium antimonide, Pulsed laser operation, Gallium, Antimony

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Proceedings Article | 1 June 1994 Paper

Recent progress with tapered-gain-region devices

Jeffrey Livas, Stephen Chinn, Emily Kintzer, James Walpole, Christine Wang, Leo Missaggia

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176603

KEYWORDS: Optical amplifiers, Fiber lasers, Fiber amplifiers, Collimation, Semiconductor lasers, Single mode fibers, Fiber couplers, Fiber coupled lasers, Wavelength division multiplexing, Optical fibers

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Proceedings Article | 16 June 1993 Paper

Single-spatial-mode tapered amplifiers and oscillators

James Walpole, Emily Kintzer, Stephen Chinn, Christine Wang, Leo Missaggia

Proceedings Volume 1850, (1993) https://doi.org/10.1117/12.146929

KEYWORDS: Optical amplifiers, Oscillators, Semiconductor lasers, Diffraction, Laser applications, Technologies and applications, Semiconductors, Amplifiers, Continuous wave operation

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The recent development of semiconductor diode optical amplifiers and lasers having a laterally tapered gain region has changed the outlook for high-power semiconductor optical sources. For the first time, highbrightness, single-element, all-semiconductor sources which emit several watts of cw power in a nearly ideal, single-lobed, diffraction-limited beam have been demonstrated. As semiconductor sources these devices have the inherent advantages of high efficiency, small size, light weight, and reliability. The amplifier12 and all-semiconductor master-oscillator power-amplifier (MOPA) devices34 have gain regions linearly tapered from a few micrometers at the amplifier input to several hundred micrometers at the output. Device lengths are typically 2 mm or more. The angle of the taper is chosen to match the diffraction angle of the input beam which has its waist near the narrow end of the taper. Such a structure is shown schematically in Fig. 1 . The etched grooves have angled side walls and act as cavity spoilers, designed to prevent oscillation of the device as a broad-area laser. The devices are fabricated in single-quantum-well strained-layer InGaAs/AlGaAs graded-index separate-confinement heterostructure laser wafers grown by organometallic vapor phase epitaxy.5 The tapered devices also operate as laser oscillators6 by increasing the input facet reflectivity. For amplifiers, both the input and output facets are coated for low reflectivity (in Fig. 1 , Ri = R2 = 1%), but for oscillators, the input facet is left uncoated (R1 —30%). The oscillators also emit several watts of cw power into a nearly single-lobed, nearly diffraction-limited beam, though their beam quality is usually somewhat inferior to that obtained for amplifiers, particularly at the highest output powers. The lateral mode of the oscillator is similar to the modes described by Fox and Li7 for unstable resonators, except that the semiconductor medium has a significant effect on the self-consistent mode which oscillates. A beam propagation calculation has been carried out to model these effects, as described below. This paper includes a review of the properties of both tapered amplifiers and oscillators.

Proceedings Article | 16 February 1993 Paper

InGaAs/AlGaAs strained quantum-well diode lasers

Christine Wang, Hong Choi, James Walpole, Emily Kintzer, Stephen Chinn, Dean Tsang, John Woodhouse, Joseph Donnelly

Proceedings Volume 1788, (1993) https://doi.org/10.1117/12.141105

KEYWORDS: Semiconductor lasers, Optical amplifiers, Laser damage threshold, Sensors, Quantum efficiency, Gallium arsenide, Indium arsenide, Heterojunctions, Continuous wave operation, High power lasers

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Proceedings Article | 1 July 1991 Paper

Low-threshold grating surface-emitting laser arrays

Gary Evans, Nils Carlson, David Bour, So Liew, Robert Amantea, Christine Wang, Hong Choi, James Walpole, Jerome Butler, W. Ferguson

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43827

KEYWORDS: Quantum efficiency, Semiconductor lasers, Continuous wave operation, Quantum wells, Laser applications, Coating, Heterojunctions, Gallium arsenide, Pulsed laser operation

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Proceedings Article | 1 August 1990 Paper

Femtosecond investigations of optical switching and X(3) in GaAs waveguides

Michael LaGasse, Kristin Anderson, Christine Wang, Hermann Haus, James Fujimoto

Proceedings Volume 1282, (1990) https://doi.org/10.1117/12.20707

KEYWORDS: Absorption, Waveguides, Semiconductors, Femtosecond phenomena, Switching, Interferometry, Laser beam diagnostics, Nonlinear optics, Phase shifts, Picosecond phenomena

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Proceedings Article | 1 May 1990 Paper

High-power hybrid two-dimensional surface-emitting AlGaAs diode laser arrays

Joseph Donnelly, Kurt Rauschenbach, Christine Wang, Robert Bailey, James Walpole, Leo Missaggia, John Woodhouse, Hong Choi, F. O'Donnell, Vicky Diadiuk

Proceedings Volume 1219, (1990) https://doi.org/10.1117/12.18263

KEYWORDS: Laser applications, Semiconductor lasers, Silicon, Pulsed laser operation, Continuous wave operation, Laser damage threshold, High power lasers, Semiconducting wafers, Gallium arsenide

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