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Dr. Bart Rijpers
Applications Engineer at ASML Netherlands BV
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Author
Publications (5)
Proceedings Article | 20 March 2018 Paper
In-resist pattern shift metrology
Anita Bouma, Bart Smeets, Lei Zhang, Thuy T. Vu, Peter de Loijer, Maikel Goosen, Willem van Mierlo, Wendy Liebregts, Bart Rijpers
Proceedings Volume 10587, 105871G (2018) https://doi.org/10.1117/12.2304364
KEYWORDS: Overlay metrology, Diffraction, Wavefront aberrations, Optical aberrations
Proceedings Article | 24 March 2009 Paper
Use of 3D metrology for process control
Bart Rijpers, Jo Finders, Hidekazu Suzuki, Toshiaki Fujii, Yuichiro Yamazaki, Hideaki Abe, Fabián Pérez-Willard
Proceedings Volume 7272, 727235 (2009) https://doi.org/10.1117/12.816370
KEYWORDS: 3D metrology, Transmission electron microscopy, Argon, Photoresist materials, Fourier transforms, Scatterometry, Scanning transmission electron microscopy, Semiconducting wafers, Coating, Scanning electron microscopy
Proceedings Article | 16 April 2008 Paper
Impact of sampling on uncertainty: semiconductor dimensional metrology applications
Proceedings Volume 6922, 69220X (2008) https://doi.org/10.1117/12.772993
KEYWORDS: Critical dimension metrology, Semiconducting wafers, Metrology, Process control, Statistical analysis, Calibration, Scatterometry, Multiphoton fluorescence microscopy, Scanning electron microscopy, Etching
Proceedings Article | 24 March 2006 Paper
ArF photo resist pattern sample preparation method using FIB without protective coating
Hirohisa Okushima, Toshihiko Onozuka, Yasushi Kuroda, Toshie Yaguchi, Kaoru Umemura, Ryuichiro Tamochi, Kenji Watanabe, Norio Hasegawa, Isao Kawata, Bart Rijpers
Proceedings Volume 6152, 615244 (2006) https://doi.org/10.1117/12.655984
KEYWORDS: Silicon, Scanning transmission electron microscopy, Ion beams, Critical dimension metrology, Scanning electron microscopy, Coating, Gallium, Semiconducting wafers, Ions, Photoresist processing
Proceedings Article | 24 March 2006 Paper
Estimation of pattern shape based on CD-SEM image by using MPPC method
T. Onozuka, Y. Ojima, J. Meessen, B. Rijpers
Proceedings Volume 6152, 61521D (2006) https://doi.org/10.1117/12.655987
KEYWORDS: Critical dimension metrology, Scanning transmission electron microscopy, Line edge roughness, Edge roughness, Scanning electron microscopy, Electron microscopes, Cadmium, Atomic force microscopy, Etching, Line width roughness
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