Ms. Ariane L. Beck Profile

Ariane L. Beck

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Publications (6)

Proceedings Article | 25 October 2006 Paper

Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325nm

Ariane Beck, Xiangyi Guo, Han-Din Liu, Aruna Ghatak-roy, Joe Campbell

Proceedings Volume 6372, 63720O (2006) https://doi.org/10.1117/12.685417

KEYWORDS: Silicon carbide, Avalanche photodetectors, Single photon, Avalanche photodiodes, Ultraviolet radiation, Photon counting, Photons, External quantum efficiency, Biological detection systems, Quenching (fluorescence)

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Proceedings Article | 14 August 2003 Open Access

Photodetectors: UV to IR

Joe Campbell, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Ning Li, Feng Ma, Xiaoguang Sun, Charles Collins, A. Beck, B. Yang, Jeffrey Hurst, Rubin Sidhu, Archie Holmes, U. Chowdhury, Michael Wong, Russell Dupuis, Andrew Huntington, Larry Coldren, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar

Proceedings Volume 5246, (2003) https://doi.org/10.1117/12.511201

KEYWORDS: Avalanche photodetectors, Aluminum, Gallium, Photodetectors, Photodiodes, Gallium arsenide, Ionization, Electrons, Ultraviolet radiation, Quantum dots

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Proceedings Article | 1 July 2003 Paper

Photodetectors: UV to IR

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482483

KEYWORDS: Avalanche photodetectors, Photodetectors, Ionization, Electrons, Quantum dots, Ultraviolet radiation, Resistance, External quantum efficiency, Avalanche photodiodes, Indium arsenide

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Proceedings Article | 26 October 2000 Paper

AlGaN/GaN ultraviolet photodetectors

Joe Campbell, Ting Li, Shuling Wang, Ariane Beck, Charles Collins, Bo Yang, Damien Lambert, Russell Dupuis, John Carrano, Matthew Schurman, Ian Ferguson

Proceedings Volume 4134, (2000) https://doi.org/10.1117/12.405335

KEYWORDS: Ultraviolet radiation, Gallium nitride, Photodetectors, Photodiodes, Quantum efficiency, Resistance, PIN photodiodes, External quantum efficiency, Aluminum, Diodes

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Proceedings Article | 13 April 2000 Paper

High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure

Ting Li, Shuling Wang, Ariane Beck, Charles Collins, Bo Yang, Russell Dupuis, John Carrano, Matthew Schurman, Ian Ferguson, Joe Campbell

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382131

KEYWORDS: Quantum efficiency, Gallium nitride, Ultraviolet radiation, Photodetectors, Heterojunctions, Photodiodes, Raster graphics, Reactive ion etching, External quantum efficiency, PIN photodiodes

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Proceedings Article | 13 April 2000 Paper

High-performance GaN/AlGaN-based ultraviolet photodetectors

John Carrano, Ting Li, Charles Collins, Ariane Beck, Shuling Wang, Bo Yang, Damien Lambert, Christopher Eiting, Russell Dupuis, Joe Campbell, Michael Wraback, Hongen Shen, Matthew Schurman, Ian Ferguson

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382125

KEYWORDS: Gallium nitride, Ultraviolet radiation, Quantum efficiency, Photodetectors, Photodiodes, PIN photodiodes, Absorption, Avalanche photodetectors, Resistance, Diffusion

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