Dr. Archie L. Holmes Profile

Dr. Archie L. Holmes

at Univ of Virginia

SPIE Involvement:

Author

Proceedings Article | 7 May 2012 Paper

Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k-p method

Baile Chen, A. Holmes, Viktor Khalfin, Igor Kudryashov, Bora Onat

Proceedings Volume 8381, 83810F (2012) https://doi.org/10.1117/12.918764

KEYWORDS: Quantum wells, Mid-IR, Indium gallium arsenide, Semiconductor lasers, Cladding, Laser development, Quantum cascade lasers, Structural design, Molecular spectroscopy, Gallium antimonide

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Proceedings Article | 16 September 2011 Paper

Ge on Si and InP/InGaAs single photon avalanche diodes

Zhiwen Lu, Wenlu Sun, Chong Hu, Archie Holmes, Joe Campbell, Yimin Kang, Han-Din Liu

Proceedings Volume 8155, 81551E (2011) https://doi.org/10.1117/12.894533

KEYWORDS: Silicon, Germanium, Single photon, Avalanche photodiodes, Quenching (fluorescence), Avalanche photodetectors, Diodes, Signal detection, Negative feedback, Resistors

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Proceedings Article | 21 May 2011 Paper

Modeling of the electrical characteristics of SWIR/MWIR InGaAs/GaAsSb type-II MQW photodiodes

Baile Chen, Jinrong Yuan, A. Holmes

Proceedings Volume 8012, 80121Z (2011) https://doi.org/10.1117/12.886475

KEYWORDS: Photodiodes, Quantum wells, Absorption, Data modeling, PIN photodiodes, Mid-IR, Diffusion, Indium gallium arsenide, Statistical modeling, Short wave infrared radiation

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Proceedings Article | 4 May 2010 Paper

Design and characterization of strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm

W. Jiang, Baile Chen, Jinrong Yuan, A. Holmes

Proceedings Volume 7660, 76603O (2010) https://doi.org/10.1117/12.849562

KEYWORDS: Antimony, Quantum wells, Mid-IR, Electrons, Temperature metrology, Absorption, PIN photodiodes, Photodiodes, Molecular beam epitaxy, Semiconducting wafers

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Proceedings Article | 8 December 2003 Paper

Low noise telcommunications APDs

Archie Holmes, Joe Campbell, Xiaoguang Sun, Shuling Wang, Rubin Sidhu, Xiaoguang Zheng, Xiaowei Li

Proceedings Volume 5248, (2003) https://doi.org/10.1117/12.512954

KEYWORDS: Avalanche photodetectors, Gallium arsenide, Gallium, Aluminum, Antimony, Ionization, Absorption, Quantum wells, Chemical species, Silicon

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Proceedings Article | 14 August 2003 Open Access

Photodetectors: UV to IR

Joe Campbell, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Ning Li, Feng Ma, Xiaoguang Sun, Charles Collins, A. Beck, B. Yang, Jeffrey Hurst, Rubin Sidhu, Archie Holmes, U. Chowdhury, Michael Wong, Russell Dupuis, Andrew Huntington, Larry Coldren, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar

Proceedings Volume 5246, (2003) https://doi.org/10.1117/12.511201

KEYWORDS: Avalanche photodetectors, Aluminum, Gallium, Photodetectors, Photodiodes, Gallium arsenide, Ionization, Electrons, Ultraviolet radiation, Quantum dots

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Proceedings Article | 1 July 2003 Paper

Photodetectors: UV to IR

Joe Campbell, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Ning Li, Feng Ma, Xiaoguang Sun, Charles Collins, A. Beck, B. Yang, Jeffrey Hurst, Rubin Sidhu, Archie Holmes, U. Chowdhury, Michael Wong, Russell Dupuis, Andrew Huntington, Larry Coldren, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482483

KEYWORDS: Avalanche photodetectors, Photodetectors, Ionization, Electrons, Quantum dots, Ultraviolet radiation, Resistance, External quantum efficiency, Avalanche photodiodes, Indium arsenide

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Proceedings Article | 9 July 2001 Paper

Ultralow-noise avalanche photodiodes

Joe Campbell, Shuling Wang, X. Zheng, G. Kinsey, Archie Holmes, X. Sun, R. Sidhu, Ping Yuan

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432598

KEYWORDS: Avalanche photodetectors, Ionization, Gallium arsenide, Aluminum, Avalanche photodiodes, Diffusion, Heterojunctions, Silicon, Doping, Semiconducting wafers

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Proceedings Article | 27 January 1998 Paper

Fusion bonding: hetero-interfacial materials analysis and device application

K. Black, Aaron Hawkins, Near Margalit, Dubravko Babic, Archie Holmes, Ying-Lan Chang, P. Abraham, John Edward Bowers, Evelyn Hu

Proceedings Volume 10292, 1029204 (1998) https://doi.org/10.1117/12.300613

KEYWORDS: Materials analysis, Semiconducting wafers, Interfaces

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Proceedings Article | 1 June 1994 Paper

Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)

Steven DenBaars, Archie Holmes, Mark Heimbuch

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176613

KEYWORDS: Quantum wells, Semiconductor lasers, Laser damage threshold, Metalorganic chemical vapor deposition, Indium gallium arsenide, Liquids, Solids, Gases, Luminescence, Heterojunctions

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Showing 5 of 10 publications

Conference Committee Involvement (4)

Optoelectronic Devices: Physics, Fabrication, and Application IV

11 September 2007 | Boston, MA, United States

Optoelectronic Devices: Physics, Fabrication, and Application III

1 October 2006 | Boston, Massachusetts, United States

Optoelectronic Devices: Physics, Fabrication, and Application II

24 October 2005 | Boston, MA, United States

Physics and Applications of Optoelectronic Devices

25 October 2004 | Philadelphia, Pennsylvania, United States

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