Mr. Aravind Narayana Samy Profile

Aravind Narayana Samy

at GLOBALFOUNDRIES Dresden Module Two GmbH & Co KG

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Publications (8)

Proceedings Article | 3 October 2019 Paper

Improving chip performance by photomask tuning: ultimate intra-field CD control as a major part of an overall excursion prevention strategy

Rolf Seltmann, Aravind Narayana Samy, Thomas Thamm, Ofir Sharoni, Yael Sufrin, Avi Cohen, Thomas Scheruebl

Proceedings Volume 11148, 111480L (2019) https://doi.org/10.1117/12.2536896

KEYWORDS: Photomasks, Semiconducting wafers, Optical lithography, Critical dimension metrology, Failure analysis, Scanners, 3D modeling, Line width roughness, Reticles

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Proceedings Article | 20 March 2018 Paper

Hot spot variability and lithography process window investigation by CDU improvement using CDC technique

Thomas Thamm, Bernd Geh, Marija Djordjevic Kaufmann, Rolf Seltmann, Alla Bitensky, Martin Sczyrba, Aravind Narayana Samy

Proceedings Volume 10587, 105870F (2018) https://doi.org/10.1117/12.2297382

KEYWORDS: Photomasks, Scanners, Reticles, Light scattering, Scattering, Logic devices, Source mask optimization, Lithography

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Proceedings Article | 4 September 2015 Paper

OPC verification considering CMP induced topography

Rakesh Kumar Kuncha, Aravind Narayana Samy, Ushasree Katakamsetty

Proceedings Volume 9661, 96610E (2015) https://doi.org/10.1117/12.2196646

KEYWORDS: Optical proximity correction, Chemical mechanical planarization, Semiconducting wafers, Lithography, Metals, Finite element methods, Photomasks, Resolution enhancement technologies, Surface finishing, Data modeling

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Proceedings Article | 28 March 2014 Paper

Scanner correction capabilities aware CMP lithography hotspot analysis

Ushasree Katakamsetty, Hui Colin, Sky Yeo, Perez Valerio, Yang Qing, Quek Shyue Fong, Narayana Samy Aravind, Ruhm Matthias, Schiwon Roberto

Proceedings Volume 9053, 905312 (2014) https://doi.org/10.1117/12.2053035

KEYWORDS: Lithography, Chemical mechanical planarization, Scanners, Manufacturing, Design for manufacturability, Design for manufacturing, Surface finishing, Copper, Semiconducting wafers, Finite element methods

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Proceedings Article | 27 March 2014 Paper

Assessing SEM contour based OPC models quality using rigorous simulation

Francois Weisbuch, Aravind Samy Naranaya

Proceedings Volume 9051, 90510A (2014) https://doi.org/10.1117/12.2047826

KEYWORDS: Optical proximity correction, 3D modeling, Calibration, Scanning electron microscopy, Data modeling, Performance modeling, 3D metrology, Cadmium, Lithography, Image quality

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Proceedings Article | 1 October 2013 Paper

Challenges in process marginality for advanced technology nodes and tackling its contributors

Aravind Narayana Samy, Roberto Schiwon, Rolf Seltmann, Frank Kahlenberg, Ushasree Katakamsetty

Proceedings Volume 8886, 888609 (2013) https://doi.org/10.1117/12.2047086

KEYWORDS: 3D modeling, Photomasks, Chemical mechanical planarization, Semiconducting wafers, Lithography, Calibration, Finite element methods, 3D metrology, Computer simulations, Reticles

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Proceedings Article | 12 April 2013 Paper

Role of 3D photo-resist simulation for advanced technology nodes

Aravind Narayana Samy, Rolf Seltmann, Frank Kahlenberg, Jessy Schramm, Bernd Küchler, Ulrich Klostermann

Proceedings Volume 8683, 86831E (2013) https://doi.org/10.1117/12.2011427

KEYWORDS: 3D modeling, Calibration, Photoresist processing, Data modeling, Scanning electron microscopy, 3D metrology, Etching, Process modeling, Atomic force microscopy, Lithography

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3D Resist Models are gaining significant interest for advanced technology node development. Correct prediction of resist profiles, resist top-loss and top-rounding are acquiring higher importance in ORC hotspot verification due to impact on etch resistance and post etch results. We would like to highlight the specific calibration procedure to calibrate a rigorous 3D model. Special focus is on the importance of high quality metrology data for both a successful calibration and for allowing a reduction of the number of data points used for calibration [1]. In a productive application the calibration could be performed using a subset of 20 features measured through dose and focus and model validation was done with 500 features through dose and focus. This data reduction minimized the actual calibration effort of the 3D resist model and enabled calibration run times of less than one hour. The successful validation with the complete data set showed that the data reduction did not cause over- fitting of the model. The model is applied and verified at hotspots showing defects such as bottom bridging or top loss that would not be visible in a 2D resist model. The model performance is also evaluated with a conventional CD error metric where CD at Bottom of simulation and measurement are compared. We could achieve excellent results for both metrics using SEM CD, SEM images, AFM measurements and wafer cross sections. Additional modeling criterion is resist model portability. A prerequisite is the separability of resist model and optical model, i.e. the resist model shall characterize the resist only and should not lump characteristics from the optical model. This is a requirement to port the resist model to different optical setups such as another illumination source without the need of re-calibration. Resist model portability is shown by validation and application of the model to a second process with significantly different optical settings. The resist model can predict hot spots and CDs for the second litho process with the same quality as for the process it was calibrated to.

Proceedings Article | 5 February 2010 Paper

Temperature measurement on MOEMS micromirror plates under illumination

Ingo Wullinger, Dirk Rudloff, Klaus Lukat, Peter Dürr, Mathias Krellmann, Detlef Kunze, Aravind Narayana Samy, Ulrike Dauderstädt, Michael Wagner

Proceedings Volume 7592, 75920P (2010) https://doi.org/10.1117/12.842066

KEYWORDS: Mirrors, Temperature metrology, Convection, Micromirrors, Microopto electromechanical systems, Resistors, Calibration, Resistance, Photonic microstructures, Microsystems

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Showing 5 of 8 publications

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