Ms. Anja Rosenbusch Profile

Anja Rosenbusch

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Publications (31)

Proceedings Article | 6 December 2004 Paper

Aerial-image-based inspection on subresolution scattering bars

Luke Hsu, C. Lin, Anja Rosenbusch, Yuval Bloomberg, Simon Kurin

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.579749

KEYWORDS: Inspection, Photomasks, Scattering, Solids, Semiconducting wafers, Resolution enhancement technologies, Defect detection, Defect inspection, Image enhancement, Light scattering

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Proceedings Article | 17 December 2003 Paper

Aerial-image-based off-focus inspection: lithography process window analysis during mask inspection

Shirley Hemar, Reuven Falah, Anja Rosenbusch, Yuval Blumberg

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517815

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Reticles, Optical proximity correction, Critical dimension metrology, Lithography, Defect detection, Image enhancement, Printing

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The industry roadmap for IC manufacturing at design rules of 90nm and below foresees low k1-factor optical lithography at 193nm exposure wavelength. Aggressive model-based OPC are being used more and more frequently in order to achieve the extremely tight mask CD specifications required by 90nm technology node. State-of-the-art mask inspection is challenged to detect CD defects close to metrology resolution. Inspection of OPC is critical; OPC feature dimensions are usually near or below the resolution limits of mask exposure. In addition, chrome defects can be semitransparent and change the intensity of light on the wafer. In this paper aerial-image based mask inspection is investigated and presented. The concept inspects a given mask based on its aerial image with selected wafer exposure conditions, thus “finds only defect which will print”. This paradigm shift in mask inspection philosophy provides the unique opportunities of verifying and controlling the entire aerial image generated by the inspected mask. As reticle enhancement techniques like OPC are designed to enhance the aerial image of a mask, this concept offers a comprehensive way of inspecting these techniques. The inspection is shifted from detecting every single minor change on mask to detecting what on mask could possibly impact the printing image quality on the wafer. In this paper an advanced application of aerial-image based mask inspection is discussed in more detail. As a standard, the Aera193 uses the best-focus aerial image for defect detection. From HNA mask inspection it is a well-known fact, that shifting the inspection off-focus, can provide a more sensitive detection. In the csase of aerial-image based inspection, going off-focus can be compared with lithography exposure out of focus. In other words, the lithography process window will be taken into account for defect detection. This methodology provides additional important information ·Understand process window printability of defects detected at best-focus ·Detect additional defects, which may print at the borders of the process window. This information is of extreme value for wafer lithography and may help by decisions about lithography process and mask usage. Focus of the paper is to analyze the application of aerial image-based off-focus inspection. Advanced OPC test plates are used to analyze detection at best and off-focus. The inspection results are compared to actual wafer results. Wafer lithography benefit is discussed.

Proceedings Article | 28 August 2003 Paper

Aerial-image based inspeciton of AAPSM for 193-nm lithography generation

Anja Rosenbusch, Shirley Hemar, Reuven Falah

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504060

KEYWORDS: Heads up displays, Inspection, Lithography, Photomasks, Phase shifting, Mask making, System identification

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Proceedings Article | 28 August 2003 Paper

Inspection of aggressive OPC using aerial image-based mask inspection

Luke Hsu, Johnson Hung, Hong-Chang Hsieh, Anja Rosenbusch, Reuven Falah, Yuval Blumberg

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504058

KEYWORDS: Inspection, Optical proximity correction, Heads up displays, Lithium, Imaging systems, Airborne remote sensing

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Proceedings Article | 2 June 2003 Paper

CD uniformity control using aerial image-based mask inspection

Shirley Hemar, Anja Rosenbusch, Reuven Falah

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.482815

KEYWORDS: Photomasks, Inspection, Critical dimension metrology, Defect detection, Lithography, Metrology, Optical lithography, Optics manufacturing, Semiconducting wafers, Process control

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Proceedings Article | 2 June 2003 Paper

Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers

Roman Liebe, Henning Haffner, Shirley Hemar, Anja Rosenbusch, Jerry Chen, Franklin Kalk

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483535

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Reticles, Optical proximity correction, Image quality, Printing, Image enhancement, Detector development, Optical lithography

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Proceedings Article | 28 May 2003 Paper

Inspecting alternating phase shift masks by matching stepper conditions

Shirley Hemar, Anja Rosenbusch

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515103

KEYWORDS: Inspection, Photomasks, Reticles, Semiconducting wafers, Critical dimension metrology, Defect detection, Imaging systems, Image quality, Wafer-level optics, Phase shifts

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Proceedings Article | 27 December 2002 Paper

Aerial-image-based inspection of binary (OPC) and embedded-attenuated PSM

Felix Chang, Chang-Cheng Hung, John Lin, Anja Rosenbusch, Reuven Falah, Shirley Hemar

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467767

KEYWORDS: Inspection, Reticles, Photomasks, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Binary data, Defect detection, Airborne remote sensing, Wafer-level optics

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Proceedings Article | 27 December 2002 Paper

Inspecting alternating phase-shift masks by matching stepper conditions

Anja Rosenbusch, Shirley Hemar, Boaz Kenan

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467781

KEYWORDS: Inspection, Photomasks, Reticles, Semiconducting wafers, Critical dimension metrology, Defect detection, Image quality, Imaging systems, Phase shifting, Optical proximity correction

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Proceedings Article | 16 August 2002 Paper

Inspection of alternating PSM reticles using UV-based 365-nm reticle inspection tool

Anja Rosenbusch, Michael Har-zvi, Gidon Gottlib

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479352

KEYWORDS: Inspection, Photomasks, Reticles, Error analysis, Phase shifting, Lithography, Defect inspection, Defect detection, Optical inspection, Databases

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Proceedings Article | 16 August 2002 Paper

Mask CD uniformity impact during incoming quality control

Ernesto Villa, Emanuele Baracchi, Anja Rosenbusch, Michael Har-zvi, Gidon Gottlib

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479361

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Inspection, Reticles, Control systems, Quality systems, Metrology, Wafer inspection, Cadmium

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Proceedings Article | 1 August 2002 Paper

Process of manufacturing and inspection of high-end (ternary) tritone EAPSM reticles for 0.13um design rule generation

Steve Tuan, Gidon Gottlib, Anja Rosenbusch

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476924

KEYWORDS: Inspection, Photomasks, Manufacturing, Calibration, Phase shifts, Defect detection, Reticles, Lithography, Glasses, Particles

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Proceedings Article | 11 March 2002 Paper

Inspection of EAPSMs for 193-nm technology generation using a UV-based 365-nm reticle inspection tool

Michael Har-zvi, Roman Liebe, Anja Rosenbusch, Gidon Gottlib

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458359

KEYWORDS: Inspection, Photomasks, Critical dimension metrology, Calibration, Reticles, Phase shifts, 193nm lithography, Databases, Halftones, Sensors

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Proceedings Article | 11 March 2002 Paper

Inspection of production alternating PSM reticles using UV-based 365-nm reticle inspection tool

Anja Rosenbusch, Michael Har-zvi, Gidon Gottlib

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458284

KEYWORDS: Inspection, Photomasks, Reticles, Databases, Phase shifts, Lithography, Binary data, Defect inspection, Image quality standards, Chromium

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Proceedings Article | 11 March 2002 Paper

Using high-resolution (0.13 um) UV-based reticle inspection for CD uniformity in incoming quality control

Ernesto Villa, Emanuele Baracchi, Anja Rosenbusch, Michael Har-zvi, Gidon Gottlib

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458308

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Reticles, Control systems, Reliability, Process control, Cadmium, Databases

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Proceedings Article | 5 September 2001 Paper

Mask process design optimization based on quality mapping using standard mask inspection equipment

Shen Kuo, TaiSheng Tan, Anja Rosenbusch, Yair Eran, Ofer Lindman, Gidon Gottlib

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438374

KEYWORDS: Critical dimension metrology, Photomasks, System on a chip, Inspection, Databases, Reticles, Inspection equipment, Cadmium, Composites, Tolerancing

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Proceedings Article | 5 September 2001 Paper

Defect dispositioning using mask printability on attenuated phase-shift production photomasks

Justin Novak, Benjamin Eynon, Anja Rosenbusch, Alex Goldenshtein

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438407

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Quantum wells, Scattering, Lithography, Calibration, Defect detection, Mask making, Resolution enhancement technologies

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Proceedings Article | 22 January 2001 Paper

Defect dispositioning using mask printability on attenuated phase-shift production photomasks

Justin Novak, Benjamin Eynon, Eric Poortinga, Anja Rosenbusch, Yair Eran

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410771

KEYWORDS: Photomasks, Opacity, Critical dimension metrology, Lithography, Semiconducting wafers, Phase shifts, Optical proximity correction, Inspection, Scattering, Resolution enhancement technologies

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Proceedings Article | 22 January 2001 Paper

New approach to improve CD uniformity based on mask quality

Roman Liebe, Carmen Jaehnert, Gidon Gottlib, Yair Eran, Shirley Hemar, Amikam Sade, Anja Rosenbusch

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410673

KEYWORDS: Photomask technology

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Proceedings Article | 19 July 2000 Paper

Impact of pattern proximity correction on die-to-database mask inspection

Anja Rosenbusch, Vicky Bailey, Yair Eran, Reuven Falah, Shirley Hamar, Neil Holmes, Andrew Hourd, Hartmut Kirsch, Andrew McArthur

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392071

KEYWORDS: Inspection, Photomasks, Reticles, Critical dimension metrology, Mask making, Databases, Computer aided design, Optical proximity correction, Defect detection, Resolution enhancement technologies

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Proceedings Article | 3 February 2000 Paper

Improvements to mask inspectability by use of pattern proximity correction

Anja Rosenbusch, Vicky Bailey, Yair Eran, Reuven Falah, Neil Holmes, Andrew Hourd, Andrew McArthur, Wolfgang Staud

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377109

KEYWORDS: Inspection, Reticles, Mask making, Photomasks, Critical dimension metrology, Image quality, Image enhancement, Computer aided design, Databases, Defect detection

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Proceedings Article | 30 December 1999 Paper

Incorporation of laser proximity correction into mask production

Anja Rosenbusch, James Unruh, Hartmut Kirsch, David Chan

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373347

KEYWORDS: Photomasks, Optical proximity correction, Mask making, Opacity, Reticles, Semiconducting wafers, Inspection, Image quality standards, Scanning electron microscopy, Computer aided design

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Proceedings Article | 26 July 1999 Paper

Application of a new approach to optical proximity correction

Anja Rosenbusch, Andrew Hourd, Casper Juffermans, Hartmut Kirsch, Frederic Lalanne, Wilhelm Maurer, Carmelo Romeo, Kurt Ronse, Patrick Schiavone, Michal Simecek, Olivier Toublan, Tom Vermeulen, John Watson, Wolfram Ziegler, Rainer Zimmermann

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354378

KEYWORDS: Optical proximity correction, Etching, Semiconducting wafers, Inspection, Deep ultraviolet, Reticles, Critical dimension metrology, Manufacturing, Mathematical modeling, Mask making

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Proceedings Article | 18 December 1998 Paper

New approach to optical proximity correction

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332856

KEYWORDS: Optical proximity correction, Reticles, Photomasks, Inspection, Data modeling, Manufacturing, Deep ultraviolet, Logic, Semiconducting wafers, Etching

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Proceedings Article | 18 December 1998 Paper

Full-chip optical proximity correction using lithography simulation

Graham Arthur, Brian Martin, Christine Wallace, Anja Rosenbusch, Huw Fryer

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332847

KEYWORDS: Optical proximity correction, Reticles, Lithography, Critical dimension metrology, Photomasks, Semiconducting wafers, Photoresist materials, Image processing, Silicon, Manufacturing

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Proceedings Article | 18 December 1998 Paper

Assessment of corner-rounding improvement by automatic software correction on laser pattern generator manufactured photomasks

Wolfram Ziegler, Anja Rosenbusch

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332844

KEYWORDS: Photomasks, Manufacturing, Critical dimension metrology, Semiconducting wafers, Inspection, Reticles, Lithography, Mask making, Image resolution, Microscopes

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Proceedings Article | 5 June 1998 Paper

Electron-beam lithography on multilayer substrates: experimental and theoretical study

Ioannis Raptis, Giancarlo Meneghini, Anja Rosenbusch, Nikos Glezos, Rafaelle Palumbo, Marco Ardito, Leonardo Scopa, George Patsis, Evangelos Valamontes, Panagiotis Argitis

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309597

KEYWORDS: Monte Carlo methods, Silicon, Gold, Electron beam lithography, Optical simulations, Scattering, Chemically amplified resists, Polymethylmethacrylate, Electron beams, Diffusion

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Proceedings Article | 12 February 1997 Paper

On the way to 1 Gb: demonstration of e-beam proximity effect correction for mask making

Anja Rosenbusch, Christian Kalus, Hiroyuki Endo, Yasuki Kimura, Akihiro Endo

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.284027

KEYWORDS: Mask making, Raster graphics, Photomasks, Critical dimension metrology, Data corrections, Scattering, Electron beam lithography, Sun, Control systems, Data conversion

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The e-beam proximity effect is well known as one of the limiting factors in e-beam lithography. As features get smaller the need for e-beam proximity effect correction increases. There exist different approaches to cover these effects by varying dose or shape of the pattern layout during the exposure step. Whichever algorithm is used, the question of proximity effect correction gets more and more a performance problem for forefront applications like the 256 megabit and 1 gigabit chips. The correction approach has to handle large data volume in reasonable time. Key to overcome this hurdle is to include hierarchial data handling into the proximity correction algorithm, which involves hierarchical data structures as well as hierarchy reorganization methods. The goal of the present work is to perform all necessary steps in order to guarantee the accuracy of the exposure result for the 1 gigabit memory chip. One step of the preparation is the e-beam proximity correction for raster scan machines. With respect to proximity effect correction, raster scan machines have a severe drawback. The scanning speed is constant while writing the layout, i.e., dose variation is not applicable to compensate for the proximity effect. There is, however, the geometry which can be exploited as degree of freedom. Geometrical variations of the layout underlie many constraints such as neighboring features, the exposure grid of the e-beam tool and, but not least, writing time. The paper presents how to solve some of the major problems occurring when proximity effect correction becomes an unavoidable step in the mask making process. Power and application limits of proximity effect correction for raster scan machines are investigated. The exposure has been carried out on a MEBES 4500 system. Process latitude and line width linearity are presented. In addition, practical questions like file size increase due to proximity correction are investigated. Exposure results of uncorrected and corrected pattern are compared to demonstrate the necessity of the correction as well as the improvement in pattern fidelity.

Proceedings Article | 27 December 1996 Paper

SELID: a new 3D simulator for e-beam lithography

Anja Rosenbusch, Nikos Glezos, Magdalena Kalus, Ioannis Raptis

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262829

KEYWORDS: Monte Carlo methods, Electron beam lithography, 3D displays, Backscatter, Optical simulations, Diffusion, Lithography, Electron beams, Scattering, Laser scattering

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Proceedings Article | 27 May 1996 Paper

Hierarchical e-beam proximity correction in mask making

Ulrich Hofmann, Christian Kalus, Anja Rosenbusch, Rik Jonckheere, Andrew Hourd

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240465

KEYWORDS: Photomasks, Mask making, Optical proximity correction, Computer aided design, Raster graphics, Wafer-level optics, Reticles, Scattering, Optical calibration, Fractal analysis

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Proceedings Article | 8 December 1995 Paper

Hierarchical proximity correction using CAPROX

Ulrich Hofmann, Christian Kalus, Anja Rosenbusch, Hiroyuki Endo, Yasuki Kimura, Akihiro Endo

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228210

KEYWORDS: Scattering, Optical proximity correction, Electrons, Algorithm development, Data processing, Computer aided design, Optical spheres, Electron beam lithography, Scanning electron microscopy, Data corrections

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Showing 5 of 31 publications

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