The bandwidth of an optically pumped semiconductor laser (OPS) is determined by the bandwidth of the material gain, the bandwidth of the longitudinal confinement factor (LCF), and the bandwidth of the Distributed Bragg Reflector (DBR). For a typical OPS structure at 1064nm, the bandwidth of the DBR is the largest among them. In this work, we demonstrate a tunable OPS structure with broadened material gain and LCF, so that the bandwidth of the OPS is close to the bandwidth of the DBR. The laser outputs more than 2W, tunable in a wavelength range of 1035 – 1100nm.
The most technologically mature optically pumped semiconductor lasers (OPSL) are based on InGaAs quantum wells (QW) for emission in the 900-1200 nm range. The low wavelength boundary is set by both the bandgap of InGaAs and the most common pump wavelength of 808 nm. To extend the wavelength coverage into 700 – 900 nm, a different QW system and a different pump wavelength are needed. In this work, we present the progress and result in the development of AlGaAs-based OPSL.
Optically pumped semiconductor lasers (OPSL) have been replacing legacy gas lasers and solid state lasers for over a decade, due to their superior properties such as compactness, high efficiency, low noise, wavelength scalability, and power scalability. It has wide applications in life sciences, medical therapeutics, light show, and other scientific researches. In this work, we present a gain model and couple it to the thermal management of high power OPSL.
High power compact UV lasers with diffraction limited beam are required for industrial applications such as laser direct
imaging, wafer inspection or photo voltaic. By use of a Nd:YVO4 oscillator with a Saturable Bragg Reflector and a
single pass amplifier, 73 W output power in mode-locked operation at 80 MHz have been generated with high peak
power. By use of two LBO crystals a third harmonic output power of 35 W at 355 nm was demonstrated with an M2
value of <1.2. This corresponds to 48% nonlinear conversion efficiency.
Quasi-cw UV light sources are of interest for replacing frequency-doubled Ar-Ion lasers in several applications. Our
target application in semiconductor inspection requires a narrow bandwidth cw or quasi-cw source at 258nm, which
cannot be achieved by frequency converting the output of a (modelocked) Neodymium-based laser.
We developed a fiber MOPA system which operates at a high repetition rate of 5MHz and generates 1ns long pulses.
The system consists of a low power oscillator and four consecutive amplifier stages. which boost the average power to
40W at 1031nm.
The IR output of the fiber system is frequency doubled and quadrupled using LBO and CLBO crystals for SHG and
FHG, respectively. We achieved SHG conversion efficiencies of up to 82% and a UV power of up to 14W.
Compact DPSS UV sources are of interest for replacing Ar-Ion lasers in applications that require cw or quasi-cw laser
radiation. One way to generate UV light at 355nm and 266nm is by modelocking an IR Nd:YVO4 laser and converting
the ps pulses into the second, third, and fourth harmonic. The mechanism of choice is passive modelocking using a
Saturable Bragg Reflector (SBR). We have developed an air-cooled system capable of UV output powers in excess of
6W. Laser performance as well as lifetime data will be presented for wavelengths at 355nm and 266nm.
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