Dr. Ahmed Hamed Fatehy Profile

Dr. Ahmed Hamed Fatehy

Senior Product Engineering Manager at Siemens EDA

SPIE Involvement:

Author

Websites:

Company Website

Ahmed Hamed received his B.Sc. and M.Sc. degrees in Electronics and Electrical Communications Engineering from Cairo University in 2007 and 2015, respectively. He received his Ph.D. degree in Integrated Circuits from Ain-Shams University, Cairo, Egypt in 2023. In 2013 Ahmed joined Mentor Graphics Cairo, now known as Siemens EDA. Since then, he has contributed to the development of EDA tools in the fields of Resolution Enhancement Techniques (RET), Optical Proximity Correction (OPC), Multi-Patterning (MP), and Design for Manufacturability (DFM) with over 15 publications in addition to a U.S. patent. Ahmed is currently working as a Senior Product Engineering Manager at Calibre Semi-Manufacturing Solutions and his current research focuses on ML modeling and applications for IC layout Design and Manufacturing. Ahmed has been a member of SPIE since 2013. He can be reached at ahmed.hamedfatehy@siemens.com

SPIE Journal Paper | 29 June 2023 Open Access

Geometrical positioning surveying-based features for BEOL line-end-pull-back modeling using regression-based machine-learning

Ahmed Hamed Fathi Hamed, Hazem Hegazy, Omar El-Sewefy, Mohamed Dessouky, Ashraf Salem

JM3, Vol. 22, Issue 02, 023401, (June 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.2.023401

KEYWORDS: Global Positioning System, Data modeling, Education and training, Feature extraction, Modeling, Simulation of CCA and DLA aggregates, Back end of line, Simulations, Machine learning, Design and modelling

Read Abstract +

DOWNLOAD PAPER

Proceedings Article | 28 April 2023 Presentation + Paper

IC layouts patterns topological profiling using directional geometrical kernels

Ahmed Hamed Fathi Hamed, Omar El-Sewefy, Sara Khalaf, Hazem Hegazy, Mohamed Dessouky, Ashraf Salem

Proceedings Volume 12495, 124950T (2023) https://doi.org/10.1117/12.2656957

KEYWORDS: Profiling, Manufacturing, Design for manufacturing, Tolerancing, Model-based design, Lithography, Feature extraction, Design and modelling, Etching

Read Abstract +

Proceedings Article | 28 April 2023 Poster + Paper

CPU time prediction using machine learning for post-tapeout flow runs

Maram Salah, Ahmed Hamed Fathi Hamed, Stephen Kim, Pascal Gilgenkrantz, Wooil Han, Roberto Ramsis, Ken Jantzen

Proceedings Volume 12495, 124951O (2023) https://doi.org/10.1117/12.2657666

KEYWORDS: Data analysis, Data modeling, Machine learning, Feature extraction

Read Abstract +

Proceedings Article | 23 March 2020 Presentation + Paper

Exploring patterning limit and enhancement techniques to improve printability of 2D shapes at 3nm node

Rehab Kotb, Ahmed Hamed-Fatehy, James Word

Proceedings Volume 11328, 113280F (2020) https://doi.org/10.1117/12.2552091

KEYWORDS: Optical proximity correction, Image enhancement, Extreme ultraviolet lithography, Design for manufacturing

Read Abstract +

Proceedings Article | 21 March 2019 Paper

SALELE process from theory to fabrication

Youssef Drissi, Werner Gillijns, Jae Uk Lee, Ryan Ryoung han Kim , Ahmed Hamed-Fatehy, Rehab Kotb, Rajiv Naresh Sejpal, Germain Fenger, James Word

Proceedings Volume 10962, 109620V (2019) https://doi.org/10.1117/12.2517051

KEYWORDS: Manufacturing, Optical proximity correction, Extreme ultraviolet, Metals, Photomasks, Visualization, Scanning electron microscopy, Printing, Metrology, Optical lithography

Read Abstract +

Proceedings Article | 20 March 2018 Paper

Ultimate patterning limits for EUV at 5nm node and beyond

Rehab Kotb Ali, Ahmed Hamed Fatehy, Neal Lafferty, James Word

Proceedings Volume 10583, 1058321 (2018) https://doi.org/10.1117/12.2297412

KEYWORDS: Metals, Source mask optimization, Extreme ultraviolet, Optical proximity correction, Optical lithography, Manufacturing, Printing, Extreme ultraviolet lithography, Image processing, Image quality

Read Abstract +

Proceedings Article | 20 March 2018 Presentation + Paper

Comparison between multi-colored LEn SADP/SAQP and selective-etching SADP/SAQP

Ahmed Hamed Fatehy, Rehab Kotb, James Word

Proceedings Volume 10588, 105880P (2018) https://doi.org/10.1117/12.2297417

KEYWORDS: Manufacturing, Photomasks, Etching, Model-based design, Optical proximity correction, Double patterning technology, Extreme ultraviolet, Lithography, Printing, Deep ultraviolet

Read Abstract +

Self-Aligned-Multi-Pattering (SAMP) played an important role in extending Moore’s law over the past years especially in advanced technology nodes beyond 20nm. SAMP was tackled using several approaches, the main and most commonly used approaches are SADP with Spacer-Is-Mask (SIM) and SADP with Spacer-Is-Dielectric (SID). The first approach SADP-SIM is most commonly used in devices layer with unidirectional lines. The second approach SADP-SID is now a common approach applied in metal layers with thigh pitches especially in 7nm and 5nm technologies where the original target patterns are decomposed into a Mandrel mask and Cut Mask. The Mandrel mask is printed first using DUV 193i lithography process, then side walls are grown on both sides of the printed Mandrel patterns, and then a Cut/Block mask is printed to define target’s intended tip-to-tip spacing. The summation of side walls and Cut/Blocks act as an etchblocking layer to the regions they are covering, in another words, trenches are grown in all areas that are not covered by side walls nor cut/blocks. A complementary process for SADP-SID is the filling process, where unidirectional design, consists of aligned target patterns, are accommodated into aligned tracks. The aligned tracks are alternately assigned as Mandrel and non-Mandrels tracks. The Cut/Block defines a gap within the target and accordingly define target’s tip-totip spacing. The spacing constraints between target’s line ends and tip-to-tip spacing are translated into spacing constrains between Cut/Blocks, and based on place and route style, the density of Cut/Blocks mask is defined. Usually, in real-life designs Cut/Blocks mask density is high and comes with tight spacing constrains. The challenge with printing a cut/Blocks mask with such tight constraints and spacing rules among Cut/Blocks shapes, mandated LEn Cut/Blocks Masks with 2, 3 and sometimes 4 masks, based on how close are the cut shapes to each other. Recently, a Selective- Etching SADP-SID approach was introduced in advanced nodes, where Cut/Blocks are divided into two types, Mandrel Cut/Blocks that cut only Mandrel tracks, and non-Mandrel Cut/Blocks that cut only non-Mandrel tracks, and hence these two cut/Blocks masks can overlap each other and this significantly mitigates spacing constrains between the two Cut/Block masks.

In this work we present a comparison between manufacturing flows of traditional approach SADP-SID and Selective- Etching SADP-SID, and how can the process definition of each approach affects spacing constraints between Cut/Blocks patterns, OPC masks, and accordingly, affect the final manufactured patterns quality quantified based on Edge- Placement-Error (EPE) and Process Variation Band (PVBand).

Proceedings Article | 20 March 2018 Presentation + Paper

Integrated manufacturing flow for selective-etching SADP/SAQP

Rehab Kotb Ali, Ahmed Hamed Fatehy, James Word

Proceedings Volume 10588, 105880Q (2018) https://doi.org/10.1117/12.2297415

KEYWORDS: Manufacturing, Photomasks, Etching, Optical lithography, Optical proximity correction, Double patterning technology, Printing, SRAF

Read Abstract +

Proceedings Article | 20 March 2018 Paper

Exploring EUV and SAQP pattering schemes at 5nm technology node

Ahmed Hamed Fatehy, Rehab Kotb, Neal Lafferty, Fan Jiang, James Word

Proceedings Volume 10583, 105831X (2018) https://doi.org/10.1117/12.2297408

KEYWORDS: Extreme ultraviolet, Optical proximity correction, Optical lithography, Photomasks, Source mask optimization, Deep ultraviolet, Printing, Manufacturing, Metals, Image processing

Read Abstract +

For years, Moore’s law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source’s wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore’s law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target’s line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV.

In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Proceedings Article | 16 March 2016 Paper

An integrated design-to-manufacturing flow for SADP

Ahmed Hamed Fatehy, Rehab Kotb, James Word

Proceedings Volume 9781, 97810Y (2016) https://doi.org/10.1117/12.2218828

KEYWORDS: Manufacturing, Design for manufacturability, Metals, Overlay metrology, Tolerancing, Dielectrics, Double patterning technology, Optical proximity correction, Design for manufacturing, Etching, SRAF, Photomasks, Image quality, Bridges

Read Abstract +

Showing 5 of 10 publications

Keywords/Phrases

Search In:

Publication Years