Influence of basal stacking faults on luminescence of m-plane Mg0.19Zn0.81O/ZnO quantum wells grown on a two-step MgZnO-buffer layer

Yung-Chi Wu; Ning-An Chang; Tsung-Han Yang; Chih-Ya Tsai; Hou-Ren Chen; Wen-Feng Hsieh

doi:10.1117/1.OE.58.3.037106

29 March 2019 Influence of basal stacking faults on luminescence of m-plane Mg_0.19Zn_0.81O/ZnO quantum wells grown on a two-step MgZnO-buffer layer

Yung-Chi Wu, Ning-An Chang, Tsung-Han Yang, Chih-Ya Tsai, Hou-Ren Chen, Wen-Feng Hsieh

Author Affiliations +

Optical Engineering, Vol. 58, Issue 3, 037106 (March 2019). https://doi.org/10.1117/1.OE.58.3.037106

Abstract

Different well widths of m-plane Mg_0.19Zn_0.81O / ZnO multiple quantum wells (MQWs) have been fabricated on the two-step pregrown MgZnO-buffered m-plane sapphires by a pulsed laser deposition and have a narrower linewidth on x-ray diffraction than ZnO-buffered MQWs. By using the variation method to calculate the band diagram and by corroborating the results of temperature-dependent photoluminescence, we confirm the binding energies of free exciton and basal-stacking-fault-bound exciton, which is composed of electrons in the barrier and confined hole in the narrow-width MQWs. The coupling of A1(LO) phonon with excitons in m-MQWs shows more sensitivity toward a decrease in well width than E2(low), due to the crystal symmetry and the reduced Bohr radius.

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Yung-Chi Wu, Ning-An Chang, Tsung-Han Yang, Chih-Ya Tsai, Hou-Ren Chen, and Wen-Feng Hsieh "Influence of basal stacking faults on luminescence of m-plane Mg_0.19Zn_0.81O/ZnO quantum wells grown on a two-step MgZnO-buffer layer," Optical Engineering 58(3), 037106 (29 March 2019). https://doi.org/10.1117/1.OE.58.3.037106

Received: 1 December 2018; Accepted: 15 March 2019; Published: 29 March 2019

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