Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) gate insulators fabricated by RF sputtering

Wei Ye; Wei Ren; Peng Shi; Zhuangde Jiang

doi:10.1117/1.OE.55.6.067106

21 June 2016 Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi_1.5Zn_(1+y)Nb_1.5O_(7+y) gate insulators fabricated by RF sputtering

Wei Ye, Wei Ren, Peng Shi, Zhuangde Jiang

Author Affiliations +

Funded by: National Natural Science Foundation of China, International Science Technology Cooperation Program of China, “111 Project” of China

Optical Engineering, Vol. 55, Issue 6, 067106 (June 2016). https://doi.org/10.1117/1.OE.55.6.067106

Abstract

^{A series of ZnO thin film transistors (TFTs) using pyrochlore Bi_1.5Zn_(1+y)Nb_1.5O_(7+y) (BZN) thin films as gate insulators by RF sputtering has been fabricated. The relations between the zinc content and performance of BZN thin films and ZnO-TFTs are studied. The electrical properties of the ZnO-TFTs with BZN gate insulators as a function of Zn content are discussed. The research results showed that excess Zn (5 mol.%) can significantly enhance the performance of BZN thin films and ZnO-TFTs, which is mainly attributed to the compensation of Zn volatility during fabrication of BZN thin films. At an applied electric field of 250 kV/cm, the leakage current density of BZN thin films with 5 mol.% excess Zn is approximately four order of magnitude lower than that of BZN thin films without excess Zn. The subthreshold and surface state density of ZnO-TFTs were decreased from 684 and 350 mV/dec to 4.5×10¹² and 2×10¹² cm−², respectively, as Zn content was increased.}

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Wei Ye, Wei Ren, Peng Shi, and Zhuangde Jiang "Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi_1.5Zn_(1+y)Nb_1.5O_(7+y) gate insulators fabricated by RF sputtering," Optical Engineering 55(6), 067106 (21 June 2016). https://doi.org/10.1117/1.OE.55.6.067106

Published: 21 June 2016

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