Fabrication of a far-infrared photodetector based on InAs/GaAs quantum dot superlattices

Yi-Chang Cheng; San-Te Ching-Ming Yang; Jyh-Neng Yang; Wen-Hou Lan; Liann-Be Chang; Li-Zen Hsieh

doi:10.1117/1.1525277

1 January 2003 Fabrication of far-infrared photodetector based on InAs/GaAs quantum dot superlattices

Yi-Chang Cheng, San-Te Ching-Ming Yang, Jyh-Neng Yang, Wen-Hou Lan, Liann-Be Chang, Li-Zen Hsieh

Optical Engineering, Vol. 42, Issue 1, (January 2003). https://doi.org/10.1117/1.1525277

A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm^–1). The electrical characteristic of the device's current-voltage response is 63 μA at –1-V bias voltage when a 1-cd light source is at 15-cm distance.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Yi-Chang Cheng, San-Te Ching-Ming Yang, Jyh-Neng Yang, Wen-Hou Lan, Liann-Be Chang, and Li-Zen Hsieh "Fabrication of far-infrared photodetector based on InAs/GaAs quantum dot superlattices," Optical Engineering 42(1), (1 January 2003). https://doi.org/10.1117/1.1525277

Published: 1 January 2003

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