1 June 1995 Coherent thermal radiation effects on temperature-dependent emissivity of thin-film structures on optically thick substrates
Peter Y. Wong, Christopher K. Hess, Ioannis N. Miaoulis
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Abstract
Many studies on thermal processing of thin-film structures assume an incoherent thermal emission with an emissivity value that is constant or varies according to bulk properties. However, thermal radiation has a coherence length that varies with temperature. Thus, coherent thin-film interference affects the radiative properties of heterostructures when the wavelengths of radiation are of the same order of magnitude as the film thicknesses. For semiconducting and dielectric thin films on optically thick substrates, there are distinct trends in these microscale radiative effects. Numerical simulations of the temperature-dependent optical characteristics of multilayer thin-film structures were conducted to evaluate the thin-film interference effects. These results can be applied to thermal processes of thin-film structures where a spatial or temporal temperature distribution exists. An example of these effects is shown for radiative cooling of silicon-on-insulator wafers.
Peter Y. Wong, Christopher K. Hess, and Ioannis N. Miaoulis "Coherent thermal radiation effects on temperature-dependent emissivity of thin-film structures on optically thick substrates," Optical Engineering 34(6), (1 June 1995). https://doi.org/10.1117/12.203137
Published: 1 June 1995
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Cited by 8 scholarly publications.
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KEYWORDS
Silicon

Silicon films

Thin films

Semiconducting wafers

Multilayers

Temperature metrology

Radiation effects

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