Emission of visible light from porous silicon during anodic oxidation

Beatrys M. Lacquet; D. Francois Malan

doi:10.1117/12.175696

1 September 1994 Emission of visible light from porous silicon during anodic oxidation

Beatrys M. Lacquet, D. Francois Malan

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Optical Engineering, Vol. 33, Issue 9, (September 1994). https://doi.org/10.1117/12.175696

Abstract

The electrochemical oxidation of p-type porous silicon prepared under different conditions is investigated. During the oxidation process, bright visible light is emitted from the surface. The time evolution of integrated electroluminescence signals obtained from a silicon photodiode are shown. The signal duration and relative intensity as a function of process parameters during the formation of the porous silicon and during the anodic oxidation are discussed with a view to establish the origin of the luminescence. The experimental results seem to give more evidence for the quantum confinement model. It does, however, not exclude other theories.

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Beatrys M. Lacquet and D. Francois Malan "Emission of visible light from porous silicon during anodic oxidation," Optical Engineering 33(9), (1 September 1994). https://doi.org/10.1117/12.175696

Published: 1 September 1994

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