Refractive index of laser active region based on InAs/InGaAs quantum dots

Nikita Yu Gordeev; Oleg I. Rumyantsev; Ivan G. Savenko; Alexey S. Payusov; Fedor I. Zubov; Mikhail V. Maximov; Alexey E. Zhukov

doi:10.1117/1.JNP.7.073087

18 July 2013 Refractive index of laser active region based on InAs/InGaAs quantum dots

Nikita Yu Gordeev, Oleg I. Rumyantsev, Ivan G. Savenko, Alexey S. Payusov, Fedor I. Zubov, Mikhail V. Maximov, Alexey E. Zhukov

Author Affiliations +

Funded by: EC’s Seventh Framework Programme

Journal of Nanophotonics, Vol. 7, Issue 1, 073087 (July 2013). https://doi.org/10.1117/1.JNP.7.073087

Abstract

The effective refractive index of the active region of 1.3 μm edge-emitting tilted wave lasers based on InAs/InGaAs self-assembled quantum dots by the analysis of the far-field pattern is investigated. The obtained values of 3.485 and 3.487 in the operating lasers and in the cold waveguides, respectively, are well comparable with the refractive index of bulk InAs at corresponding wavelength.

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Nikita Yu Gordeev, Oleg I. Rumyantsev, Ivan G. Savenko, Alexey S. Payusov, Fedor I. Zubov, Mikhail V. Maximov, and Alexey E. Zhukov "Refractive index of laser active region based on InAs/InGaAs quantum dots," Journal of Nanophotonics 7(1), 073087 (18 July 2013). https://doi.org/10.1117/1.JNP.7.073087

Published: 18 July 2013

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