Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer

Ghasem Alahyarizadeh; Zainuriah Hassan; Alaa J. Ghazai; Hadi Mahmodi; Sabah M. Thahab

doi:10.1117/1.JNP.6.063514

2 July 2012 Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer

Ghasem Alahyarizadeh, Zainuriah Hassan, Alaa J. Ghazai, Hadi Mahmodi, Sabah M. Thahab

Author Affiliations +

Journal of Nanophotonics, Vol. 6, Issue 1, 063514 (July 2012). https://doi.org/10.1117/1.JNP.6.063514

Abstract

A thin aluminum gallium nitride (AlGaN) electron blocking layer (EBL), above the active region, is used to improve the performance and reduce threshold current of indium gallium nitride (InGaN) quantum well (QW) lasers. A new structure, with delta barrier close to EBL (AlGaN/0.3 nm GaN/InGaN), was devised to prevent deleterious polarization effects and confer other advantages. The effect of a 0.3 nm-thick GaN delta barrier on the performance of a deep violet InGaN double QW laser was investigated using ISE TCAD software. The results indicate that the delta barrier significantly enhances the output power, slope efficiency and external differential quantum efficiency while decreasing the threshold current.

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Ghasem Alahyarizadeh, Zainuriah Hassan, Alaa J. Ghazai, Hadi Mahmodi, and Sabah M. Thahab "Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer," Journal of Nanophotonics 6(1), 063514 (2 July 2012). https://doi.org/10.1117/1.JNP.6.063514

Published: 2 July 2012

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