Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities

Swati Rawal; Ravindra K. Sinha; Richard M. De La Rue

doi:10.1117/1.JNP.6.063504

12 March 2012 Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities

Swati Rawal, Ravindra K. Sinha, Richard M. De La Rue

Author Affiliations +

Journal of Nanophotonics, Vol. 6, Issue 1, 063504 (March 2012). https://doi.org/10.1117/1.JNP.6.063504

Abstract

The effects of the slow-down factor on third-order nonlinear effects in silicon-on-insulator photonic crystal channel waveguides were investigated. In the slow light regime, with a group index equal to 99, these nonlinear effects are enhanced but the enhancement produced depends on the input peak power level. Simulations indicate the possibility of soliton-like propagation of 1 ps pulses at an input peak power level of 50 mW inside such a photonic crystal waveguide. The increase in the induced phase shift produced by lower group velocities can be used to decrease the size and power requirements needed to operate devices such as optical switches, logic gates, and wavelength translators.

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Swati Rawal, Ravindra K. Sinha, and Richard M. De La Rue "Silicon-on-insulator photonic crystal miniature devices with slow light enhanced third-order nonlinearities," Journal of Nanophotonics 6(1), 063504 (12 March 2012). https://doi.org/10.1117/1.JNP.6.063504

Published: 12 March 2012

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