2 March 2023 Critical three-dimensional metrologies for emerging nanoelectronics
Jiong Zhang, Zhenxin Jiang, Xiaochen Ren, Andrew Budrevich, Xiaoye Qin, Ying Zhou, Zhiyong Ma
Author Affiliations +
Abstract

Nanoelectronics is changing the world with the technology that enables global progress and enriches people’s lives. Continuing Moore’s law propels the research and the development of devices with better functionality and performance while controlling power, cost, and size. As the architectural complexity increases and functional nanomaterials advance into nano- and even atomic-scale regimes, three-dimensional (3D) metrologies become essential in validating the structure and chemistry of materials that govern the device properties. We cover recent advances of 3D metrologies in semiconductor industry research and development. It addresses the techniques from the device level, such as transmission electron microscopy and atom probe tomography to array level, such as compositional microscope and nondestructive optical-based metrologies, including 3D structural, 3D compositional analysis, and 3D property characterization.

© 2023 Society of Photo-Optical Instrumentation Engineers (SPIE)
Jiong Zhang, Zhenxin Jiang, Xiaochen Ren, Andrew Budrevich, Xiaoye Qin, Ying Zhou, and Zhiyong Ma "Critical three-dimensional metrologies for emerging nanoelectronics," Journal of Micro/Nanopatterning, Materials, and Metrology 22(3), 031204 (2 March 2023). https://doi.org/10.1117/1.JMM.22.3.031204
Received: 23 December 2022; Accepted: 8 February 2023; Published: 2 March 2023
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KEYWORDS
3D metrology

Metrology

Transistors

Transmission electron microscopy

Nanoelectronics

Germanium

3D modeling

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