Systematic framework for evaluating standard cell middle-of-line robustness for multiple patterning lithography

Brian Cline; Xiaoqing Xu; Greg M. Yeric; Bei Yu; David Z. Pan

doi:10.1117/1.JMM.15.2.021202

3 February 2016 Systematic framework for evaluating standard cell middle-of-line robustness for multiple patterning lithography

Brian Cline, Xiaoqing Xu, Greg M. Yeric, Bei Yu, David Z. Pan

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 2, 021202 (February 2016). https://doi.org/10.1117/1.JMM.15.2.021202

Abstract

For robust standard cell design, designers need to improve the intercell compatibility for all combinations of cells and cell placements. Multiple patterning lithography colorability check breaks the locality of traditional rule check, and N-wise checks are strongly needed to verify the colorability for layout interactions across cell boundaries. A systematic framework is proposed to evaluate the library-level robustness over multiple patterning lithography from two perspectives, including complete checks on two-row combinations of cells and long-range interactions. With complete checks on two-row combinations of cells, the vertical and horizontal boundary checks are explored to predict illegal cell combinations. For long-range interactions, random benchmarks are generated by cell shifting and tested to evaluate the placement-level efforts needed to reduce the manufacturing complexity from quadruple patterning lithography to triple patterning lithography for the middle-of-line (MOL) layers. Our framework is tested on the MOL layers but can be easily adapted to other critical layers with multiple patterning lithography constraints.

Citation Download Citation

Brian Cline, Xiaoqing Xu, Greg M. Yeric, Bei Yu, and David Z. Pan "Systematic framework for evaluating standard cell middle-of-line robustness for multiple patterning lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021202 (3 February 2016). https://doi.org/10.1117/1.JMM.15.2.021202

Published: 3 February 2016

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available