Abstract
As discussed previously, there are no high-transmission optical materials at EUV wavelengths due to limitations imposed by atomic absorption. As a consequence, all optical elements in the lens must be reflective for EUV lithography. Similarly, EUV masks must be either reflective or stencil-type. The semiconductor industry has made reflective masks standard, as they were seen as more practical than stencil masks. This means that masks for EUV lithography are fundamentally different from those used for optical lithography. An extensive amount of engineering effort was directed at determining what the format should be for reflective EUV masks, and additional effort was required to make them suitable for use in high-volume manufacturing.
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KEYWORDS
Photomasks

Extreme ultraviolet

Pellicles

Extreme ultraviolet lithography

Multilayers

EUV optics

Particles

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