GeSnOI platform for future development of extended-NIR silicon photonics

Moustafa El Kurdi

doi:10.1117/12.3026046

19 June 2024 GeSnOI platform for future development of extended-NIR silicon photonics

Moustafa El Kurdi

Proceedings Volume PC13012, Integrated Photonics Platforms III; (2024) https://doi.org/10.1117/12.3026046
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

GeSn alloys are promising group IV material, compatible with silicon manufacturing, to develop new class of active devices in the 2-4 µm wavelength range. We show the high potential of GeSnOI technology to develop integrated laser sources and detectors for this purpose.

Conference Presentation

Citation Download Citation

Moustafa El Kurdi "GeSnOI platform for future development of extended-NIR silicon photonics ", Proc. SPIE PC13012, Integrated Photonics Platforms III, (19 June 2024); https://doi.org/10.1117/12.3026046

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