Presentation
13 March 2024 Recent advances in micron scale III-nitrides based RGB MicroLEDs
Author Affiliations +
Abstract
The developments of high performance 1-10 micron size InGaN based RGB MicroLEDs are discussed. Through novel epitaxial growth and processing, and transparent packaging we have achieved external quantum efficiencies as high as 58% EQE at 450nm for microLEDs. The critical challenges of µLEDs, namely full-color scheme, decreasing pixel size and mass transfer technique, and their potential solutions are explored. Recently, we have demonstrated efficient microLEDs emitting in the blue to red at dimensions as small of 1 micron. Using strain relaxation methods we have also extending the wavelength range of the InGaN alloys as into the red with emission as long as 640nm. Red InGaN based red MicroLEDs with efficiencies of 6% has been fabricated, and they display superior temperature performance in comparison to AlGaInP based devices. This work was supported by the Solid State Lighting and Energy Electronics Center(SSLEEC) at UC Santa Barbara.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven P. DenBaars, Shuji Nakamura, Matthew Wong, Jordan Smith, Panpan Li, and Jacob Ewing "Recent advances in micron scale III-nitrides based RGB MicroLEDs", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC129060M (13 March 2024); https://doi.org/10.1117/12.3004035
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KEYWORDS
RGB color model

Indium gallium nitride

External quantum efficiency

Alloys

Aluminium gallium indium phosphide

Emission wavelengths

Packaging

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