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13 March 2024 Bidirectional 1310 nm MEMS VCSEL
Masoud Payandeh, Hitesh Kumar Sahoo, Marika Janka, Jukka Viheriälä, Mircea Guina, Elizaveta Semenova, kresten Yvind, Esteban Andres Proano Grijalva
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Proceedings Volume PC12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; PC1290409 (2024) https://doi.org/10.1117/12.3002368
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In recent years, continuous wavelength-tunable light sources leading micro-electro-mechanical system-based vertical cavity surface emitting lasers (MEMS-VCSELs) have been used as a technology for swept-source optical coherence tomography (SS-OCT). MEMS tuned lasers can provide wide linear tunability through engineering of the interfaces of the two cavities, a semiconductor cavity that contains the active region and an air cavity. The two cavities are coupled strongly with each other, and the tuning ratio can be altered by controlling the coupling between the air and semiconductor regions. In this work, we compare the simulation results of the three configurations and show that the extended cavity (EC) structure with 140 nm linear tuning range represents a compromise between the semiconductor coupled (SCC) and air-coupled (ACC) designs. We fabricated the SCC structure using vacuum bonding to combine an InP wafer to an SOI wafer and achieved 57 nm continuous tuning range at a sweep frequency of 1.5 MHz.
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Masoud Payandeh, Hitesh Kumar Sahoo, Marika Janka, Jukka Viheriälä, Mircea Guina, Elizaveta Semenova, kresten Yvind, and Esteban Andres Proano Grijalva "Bidirectional 1310 nm MEMS VCSEL", Proc. SPIE PC12904, Vertical-Cavity Surface-Emitting Lasers XXVIII, PC1290409 (13 March 2024); https://doi.org/10.1117/12.3002368
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KEYWORDS
Vertical cavity surface emitting lasers
Microelectromechanical systems
Semiconductors
Mirrors
Group III-V semiconductors
Optical coherence tomography
Semiconducting wafers
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