Presentation
13 March 2024 Photonic wire bonded extended cavity diode lasers on thin-film lithium niobate
Cornelis Franken, Rebecca Cheng, Victoria Rosborough, Keith Powell, Juergen Musolf, David R. Barton, Georgios Kyriazidis, Maximilian Shah, Xinrui Zhu, Yaowen Hu, Allen Chu, Henry Garrett, Amirhassan Shams-Ansari, Gage Hills, Leif Johansson, Klaus J. Boller, Marko Lončar
Author Affiliations +
Abstract
Tunable and ultra-narrow linewidth lasers that are fully integrated remain a missing component and challenge for the thin-film lithium niobate platform, while being useful for applications ranging from data communication to signal processing. Here, we present, for the first time, the demonstration of fully integrated, extended cavity diode lasers combining C-band semiconductor gain chips with TFLN using photonic wire bonding. By leveraging the scalability of photonic wirebonding the laser, with two intra-cavity RSOAs, produces a high on-chip output power of 35 mW and shows single frequency operation with more than 61 dB side mode suppression. By adjusting on-chip heaters the laser can be tuned over >40 nm across the entire gain bandwidth. Using delayed self-heterodyne detection an ultra-narrow, intrinsic linewidth of 1.4 kHz is measured.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cornelis Franken, Rebecca Cheng, Victoria Rosborough, Keith Powell, Juergen Musolf, David R. Barton, Georgios Kyriazidis, Maximilian Shah, Xinrui Zhu, Yaowen Hu, Allen Chu, Henry Garrett, Amirhassan Shams-Ansari, Gage Hills, Leif Johansson, Klaus J. Boller, and Marko Lončar "Photonic wire bonded extended cavity diode lasers on thin-film lithium niobate", Proc. SPIE PC12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, PC128890U (13 March 2024); https://doi.org/10.1117/12.3023335
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KEYWORDS
Laser bonding

Semiconductor lasers

Lithium niobate

Thin films

Wafer bonding

Fiber lasers

Laser frequency

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