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22 November 2023 Proposal of novel EUV phase shift mask
Hiroshi Hanekawa, Taiga Fudetani, Takeshi Tomizawa, Yoshiaki Ikuta
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Proceedings Volume PC12751, Photomask Technology 2023; PC127510G (2023) https://doi.org/10.1117/12.2691428
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States
Abstract
The EUV binary mask has been widely used since the EUV lithography was used for the high volume manufacturing of the leading edge semiconductor devices in 2019. The continuous advancement of the semiconductor devices requires the further improvements of the EUV lithography performance such as the resolution and imaging contrast. The EUV phase shift mask has been intensively investigated as one of candidate techniques to enhance the EUV lithography performance. However, the lithography performance of the EUV phase shift mask is relatively high sensitive to the phase shifter thickness, compared to the EUV binary mask, which is one of the potential concerns to implement the EUV phase shift mask. This paper will discuss about the dependence of the EUV lithography performance onto the phase shifter thickness and propose the unique EUV PSM blanks with less sensitive to the phase shifter thickness.
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Hiroshi Hanekawa, Taiga Fudetani, Takeshi Tomizawa, and Yoshiaki Ikuta "Proposal of novel EUV phase shift mask", Proc. SPIE PC12751, Photomask Technology 2023, PC127510G (22 November 2023); https://doi.org/10.1117/12.2691428
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KEYWORDS
Extreme ultraviolet
Phase shifts
Extreme ultraviolet lithography
Binary data
Semiconductors
High volume manufacturing
Image resolution
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