The semiconductor industry relies on EUV lithography to produce smaller and more advanced chips, and the success of this technology depends on the use of EUV pellicles. These thin, transparent films act as a protective barrier for the EUV photomask during the lithography process. By preventing particles and contaminants from reaching the photomask, the pellicle helps ensure that the final product is free of defects. As the EUVL technology has advanced, the pellicle needs more than 90% EUV transmittance and withstand higher power levels of above 30W/cm2 (600W), while also needing to have hydrogen-radical durability for a long pellicle lifetime. This report presents a newly developed pellicle composed of several layers suitable for HVM 600W EUV lithography. The change in pellicle components after EUV exposure was evaluated using Rutherford backscattering (RBS) analysis. In addition, the ultimate tensile strength of the pellicle is verified by the bulge test.
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