Advances in edge placement error metrology in the era of stochastics

Chris A. Mack; Mike Adel

doi:10.1117/12.2688228

22 November 2023 Advances in edge placement error metrology in the era of stochastics

Chris A. Mack, Mike Adel

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC127500D (2023) https://doi.org/10.1117/12.2688228
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

For the most advanced nodes, edge placement errors are typically dominated by stochastics, necessitating a rigorous stochastics approach to modeling and measuring edge placement errors and their contributors. Recently, a new approach to developing an edge placement error (EPE) model useful for lot dispositioning or EPE budgeting was presented. [1] This model gave rise to the generation of an Overlay Process Window (Figure 1), the range of overlay errors that can be tolerated in the presence of stochastics critical dimension and placement errors of the individual layers. In this work, the new EPE modeling approach is applied to other uses cases, including a contact hole landing on a line. Further, a propagation of uncertainty analysis is applied to all input measurements in order to determine the metrology requirements for measurements of the stochastics variables such as local CD uniformity and local pattern placement error. The result will be a wider ranging and more useful mode

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Citation Download Citation

Chris A. Mack and Mike Adel "Advances in edge placement error metrology in the era of stochastics", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC127500D (22 November 2023); https://doi.org/10.1117/12.2688228

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KEYWORDS

Stochastic processes

Metrology

Modeling

Critical dimension metrology

Error analysis

Failure analysis

Lithography

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