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Epsilon-near-zero (ENZ) materials such as indium tin oxide (ITO), have recently emerged as a new platform to enhance optical nonlinearities. In this talk I will report on our recent theoretical and experimental results on the origin of ultrafast nonlinearities in ITO films that are dominated by intraband and interband transitions. We show that there are two competing factors that jointly contribute to a spectrally-invertible nonlinearity of ITO near its ENZ region i.e. the nonparabolicity of the bands that results in a larger effective mass and the Fermi energy shift, which determines the free carrier density. Our work reveals the relationship between the large nonlinearity and the intrinsic material properties of the ITO films which will enable design and development of photonic materials and nonlinear devices made of transparent conductive oxides.
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