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GaAs/AlGaAs Distributed Feedback Semiconductor (DFB) lasers with laterally-coupled gratings are demonstrated at 778.1 nm wavelength with output powers up to 48 mW, over 35 dB side-mode suppression ratios, tuning ranges of 0.8 nm, and vertical beam divergences of 20.5. An asymmetrical mode expander and aluminum-free active layers have been used in the material epilayer to reduce the linewidth to 3.67 kHz and relative intensity noise (RIN) of –140 dBc/Hz while maintaining high output powers. The fabricated lasers demonstrate high-resolution spectroscopy of the hyperfine levels of the 87Rb two-photon transitions and are suitable for integration into miniaturized cold atom systems.
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Eugenio Di Gaetano, Brendan Keliehor, Paul Griffin, Marc Sorel, Erling Riis, Douglas J. Paul, "Sub-4 kHz linewidth distributed feedback lasers at 778.1 nm wavelength for two-photon Rb spectroscopy," Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244004 (17 March 2023); https://doi.org/10.1117/12.2648848