Effect of 1064 nm light on acceptors in CdSiP2 crystals

Timothy D. Gustafson; Nancy C. Giles; Kevin T. Zawilski; Peter G. Schunemann; Kent L. Averett; Jonathan E. Slagle; Larry E. Halliburton

doi:10.1117/12.2655741

17 March 2023 Effect of 1064 nm light on acceptors in CdSiP2 crystals

Timothy D. Gustafson, Nancy C. Giles, Kevin T. Zawilski, Peter G. Schunemann, Kent L. Averett, Jonathan E. Slagle, Larry E. Halliburton

Author Affiliations +

Proceedings Volume PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII; PC124050F (2023) https://doi.org/10.1117/12.2655741
Event: SPIE LASE, 2023, San Francisco, California, United States

Abstract

CdSiP2 (CSP) is a nonlinear optical material used for mid-infrared generation. For nonlinear optical materials, absorption bands associated with point defects often limit output power. We use electron paramagnetic resonance (EPR) to monitor paramagnetic charge states of defects. In CSP crystals, EPR shows singly ionized silicon vacancies (VSi-) initially present are eliminated by exposure to 1064 nm light. Our results suggest that 1064 nm light converts VSi- acceptors to nonparamagnetic doubly ionized (VSi2-) and neutral (VSi0) charge states. A thermal activation energy of 0.23 eV describes the recovery of the VSi- signal including at room temperature.

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Timothy D. Gustafson, Nancy C. Giles, Kevin T. Zawilski, Peter G. Schunemann, Kent L. Averett, Jonathan E. Slagle, and Larry E. Halliburton "Effect of 1064 nm light on acceptors in CdSiP2 crystals", Proc. SPIE PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII, PC124050F (17 March 2023); https://doi.org/10.1117/12.2655741

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