Experimental characterization of EUV resist materials: photoelectron spectroscopy

Oleg Kostko; Terry McAfee; Patrick Naulleau

doi:10.1117/12.2643179

16 November 2022 Experimental characterization of EUV resist materials: photoelectron spectroscopy

Oleg Kostko, Terry McAfee, Patrick Naulleau

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Proceedings Volume PC12292, International Conference on Extreme Ultraviolet Lithography 2022; PC1229203 (2022) https://doi.org/10.1117/12.2643179
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

In EUV resists, due to the high energy of the incident photons, most of the radiation chemistry arises from the emitted electrons and not the EUV photons themselves. The absorption of an EUV photon by a resist film leads to the emission of primary electrons, which, through a cascade of inelastic scattering events, cause excitation of molecules and emission of secondary electrons. Those electrons are playing a leading role in EUV patterning, initiating chemical transformations. The photoelectron spectroscopy of the resist materials provides information on the abundance and kinetic energies of primary and secondary electrons generated by EUV photons, as well as the ratio of slow vs. fast electrons. The photoelectron spectra demonstrate that the primary electrons have narrow energy distributions, whereas all spectra have broad distributions of slow, mostly secondary electrons, dominating the electron yield. The emitted primary electrons were assigned using quantum mechanical calculations.

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Oleg Kostko, Terry McAfee, and Patrick Naulleau "Experimental characterization of EUV resist materials: photoelectron spectroscopy", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC1229203 (16 November 2022); https://doi.org/10.1117/12.2643179

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KEYWORDS

Electrons

Extreme ultraviolet

Photoemission spectroscopy

Photons

Absorption

Chemistry

Data acquisition

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