Presentation
5 March 2022 Realization of highly rectifying Schottky barrier diodes and pn-heterojunctions on κ-Ga2O3 by pulsed laser deposition
Max Kneiss, Daniel Splith, Peter Schlupp, Anna Hassa, Holger von Wenckstern, Michael Lorenz, Marius Grundmann
Author Affiliations +
Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020I (2022) https://doi.org/10.1117/12.2623450
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We present κ-Ga2O3 layers grown by tin-assisted PLD on highly conductive Al-doped ZnO back contact layers. κ-Ga2O3 deposited on c-sapphire typically exhibits no lateral current flow. Significant currents can only be detected when a vertical current flow through the κ-Ga2O3 layer is enabled by the back contact confirming a strong conductivity anisotropy possibly due to suppressed transport across rotational domain boundaries. Pt/PtOx or Pd/PdOx Schottky contacts and NiO or ZnCo2O4 p-type contacts exhibit rectification ratios up to seven orders of magnitude. Further, we obtain a mean barrier height of ~2.1 eV and ideality factors as low as ~1.3 for Pt/PtOx/κ-Ga2O3 Schottky barrier diodes.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Max Kneiss, Daniel Splith, Peter Schlupp, Anna Hassa, Holger von Wenckstern, Michael Lorenz, and Marius Grundmann "Realization of highly rectifying Schottky barrier diodes and pn-heterojunctions on κ-Ga2O3 by pulsed laser deposition", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020I (5 March 2022); https://doi.org/10.1117/12.2623450
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KEYWORDS
Diodes

Pulsed laser deposition

Polarization

Anisotropy

Field effect transistors

Heterojunctions

Interfaces

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