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We present κ-Ga2O3 layers grown by tin-assisted PLD on highly conductive Al-doped ZnO back contact layers. κ-Ga2O3 deposited on c-sapphire typically exhibits no lateral current flow. Significant currents can only be detected when a vertical current flow through the κ-Ga2O3 layer is enabled by the back contact confirming a strong conductivity anisotropy possibly due to suppressed transport across rotational domain boundaries. Pt/PtOx or Pd/PdOx Schottky contacts and NiO or ZnCo2O4 p-type contacts exhibit rectification ratios up to seven orders of magnitude. Further, we obtain a mean barrier height of ~2.1 eV and ideality factors as low as ~1.3 for Pt/PtOx/κ-Ga2O3 Schottky barrier diodes.
Max Kneiss,Daniel Splith,Peter Schlupp,Anna Hassa,Holger von Wenckstern,Michael Lorenz, andMarius Grundmann
"Realization of highly rectifying Schottky barrier diodes and pn-heterojunctions on κ-Ga2O3 by pulsed laser deposition", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020I (5 March 2022); https://doi.org/10.1117/12.2623450
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Max Kneiss, Daniel Splith, Peter Schlupp, Anna Hassa, Holger von Wenckstern, Michael Lorenz, Marius Grundmann, "Realization of highly rectifying Schottky barrier diodes and pn-heterojunctions on κ-Ga2O3 by pulsed laser deposition," Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020I (5 March 2022); https://doi.org/10.1117/12.2623450