In this contribution, we use spectrally resolved and quantitative photoluminescence measurements to parse voltage losses in CdSeTe films and finished devices. We show that sub-bandgap features, in part due to arsenic doping, are responsible for a significant decrease in the thermodynamic voltage limit Voc,ideal. Nevertheless, thanks to excellent material quality and interface passivation, the internal voltage iVoc (i.e., quasi-Fermi-level splitting with QFLS=q×iVoc) of finished devices approaches 1000 mV, in agreement with the high minority-carrier lifetimes measured. The selectivity of the device, and in particular of the back hole contact, is thus the main limitation in these devices.
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