High Field Conductance And Hall Study Under Illumination Of EL2 Defect In Semi-Insulating GaAs

G. C. Vezzoli; Terence Burke; M. Weiner; S. Levy; B. Lalevic

doi:10.1117/12.960089

6 December 1988 High Field Conductance And Hall Study Under Illumination Of EL2 Defect In Semi-Insulating GaAs

G. C. Vezzoli, Terence Burke, M. Weiner, S. Levy, B. Lalevic

Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988) https://doi.org/10.1117/12.960089
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

In an effort to study field-assisted photoconductivity, single crysta's of semi-insulating GaAs, having EL2 defect concentration 10 16 cm-3 and resistivity 10 8 -cm, have been investigated with pulsed illumination at 0.904 µ of 40ns duration. The resulting G-V data, taken for various delay times between the onset of the voltage pulse and the onset of the laser pulse, show similar character except for the condition when the laser pulse over-laps in time the displacement current region due to the voltage pulse. It is interpreted that this difference in behavior is due to the effect of changing polarization (P) during the rise of the voltage. Very rapid oppositional voltage pulses which, in the presence of illumination, drive the total current to zero show that the current falls to the ground level far faster than the voltage and suggests avalanched recombination. Hall Effect studies show reversible sign-change in Vu at the temperature zone 130-110K, which identifies the transition to and from the photo-initiated metastable state of EL2. In samples which contain virtually zero EL2 defect, there is no indication of sign change when traversing this low-temperature region.

Citation Download Citation

G. C. Vezzoli, Terence Burke, M. Weiner, S. Levy, and B. Lalevic "High Field Conductance And Hall Study Under Illumination Of EL2 Defect In Semi-Insulating GaAs", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); https://doi.org/10.1117/12.960089

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